• 대한전자공학회논문지SD
• /
• 제45권4호
• /
• pp.57-63
• /
• 2008

본 논문에서는 Contact Etch Stop Layer (CESL)인 nitride film의 mechanical stress에 의해 인가되는 channel stress가 소자 특성에 미치는 영향에 대해 분석하였다. 잘 알려진 바와 같이 NMOS는 tensile stress와 PMOS에서는 compressive stress가 인가되었을 경우 drain current가 증가하였으며 그 원인을 체계적으로 분석하였다. NMOS의 경우 tensile stress가 인가됨으로써 back scattering ratio ($\tau_{sat}$)의 감소와 thermal injection velocity ($V_{inj}$)의 증가로 인해 mobility가 개선됨을 확인하였다. 또한 $\tau_{sat}$, 의 감소는 온도에 따른 mobility의 감소율이 작고, 그에 따른 mean free path ($\lambda_O$)의 감소율이 작기 때문인 것으로 확인되었다. 한편 PMOS의 compressive stress 경우에는 tensile stress에 비해 온도에 따른 mobility의 감소율이 크기 때문에 channel back scattering 현상은 심해지지만 source에서의 $V_{inj}$가 큰 폭으로 증가함으로써 mobility가 개선됨을 확인 할 수 있었다. 따라서 CES-Layer에 의해 인가된 channel stress에 따른 소자 특성의 변화는 inversion layer에서의 channel back scattering 현상과 source에서의 thermal injection velocity에 매우 의존함을 알 수 있다.

• ETRI Journal
• /
• 제32권2호
• /
• pp.319-326
• /
• 2010

Photonics offers a solution to data communication between logic devices in computing systems; however, the integration of photonic components into electronic chips is rather limited due to their size incompatibility. Dimensions of photonic components are therefore being forced to be scaled down dramatically to achieve a much higher system performance. To integrate these nano-photonic components, surface plasmon-polaritons and/or energy transfer mechanisms are used to form plasmonic chips. In this paper, the operating principle of plasmonic waveguide devices is reviewed within the mid-infrared spectral region at the 2 ${\mu}m$ to 5 ${\mu}m$ range, including lossless signal propagation by introducing gain. Experimental results demonstrate that these plasmonic devices, of sizes approximately half of the operating free-space wavelengths, require less gain to achieve lossless propagation. Through optimization of device performance by means of methods such as the use of new plasmonic waveguide materials that exhibit a much lower minimal loss value, these plasmonic devices can significantly impact electronic systems used in data communications, signal processing, and sensors industries.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
• /
• pp.327-330
• /
• 2004

It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

• 한국방송∙미디어공학회:학술대회논문집
• /
• 한국방송∙미디어공학회 2019년도 추계학술대회
• /
• pp.155-157
• /
• 2019

본 논문에서는 기존의 DERS, VSRS를 이용한 가상시점 합성이 가지고 있는 문제점을 해결하기 위해 비지도 학습 방식의 학습 모델을 이용하여 가상시점 합성에 적용하는 방식을 제안한다. 제안한 방식에서는 기존의 DERS와 달리 Disparity의 탐색범위를 지정하지 않고 Depth의 예측이 가능하며 단안의 영상에서 Depth를 예측하기 때문에 가상시점 합성 시 더 넓은 시점을 합성 할 수 있다. 또한 기존 방식은 Depth와 합성 영상을 각각 처리해야하지만 제안하는 방식은 한 번에 작업이 이루어지며, GPU를 기반으로 구현하였기 때문에 기존의 합성 방식 보다 처리 속도가 우수하다.

• 전기학회논문지
• /
• 제62권9호
• /
• pp.1318-1323
• /
• 2013

Thermal insulation material was prepared by cross-linking chemical reaction of silica aerogel and epoxy resin, which has a high porous and vacant properties. The structural, mechanical, and thermal properties were analyzed in order to verify its application for industrial and electrical applications. The thermal conductivities were changed from 115 mW/mK to 75 mW/mK by reducing the contents of nano-porous silica areogel powders. The compressive loading is also decreased by increasing the contents of silica aerogels by 20 wt% in aerogel/epoxy composites. It is concluded that the formulated composite materials can be applied to building materials, electronics parts, and heavy industries.

• Transactions on Electrical and Electronic Materials
• /
• 제11권5호
• /
• pp.234-237
• /
• 2010

Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately $600^{\circ}C$. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than $2,000^{\circ}C$. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권5호
• /
• pp.533-538
• /
• 2015

Thermal characterization of individual pixels in microbolometer infrared image sensors is needed for optimal design and improved performance. In this work, we used thermoreflectance microscopy on uncooled microbolometer image sensors to investigate the thermal characteristics of individual pixels. Two types of microbolometer image sensors with a shared-anchor structure were fabricated and thermally characterized at various biases and vacuum levels by measuring the temperature distribution on the surface of the microbolometers. The results show that thermoreflectance microscopy can be a useful thermal characterization tool for microbolometer image sensors.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제13권3호
• /
• pp.252-258
• /
• 2013

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
• /
• pp.667-670
• /
• 2003

Ni-silicide has low thermal stabiliy. This point is obstacle to apply NiSi to devices. So In this paper, we have studied for obtain thermal stability and analysis of dopant dependency of NiSi. And then we applied Ni-silicide to devices. To improvement of thermal stability, we deposit Ni70/Co10/Ni30/TiN100 to sample. Co midlayer is enhanced thermal stability of NiSi. Co/Ni/TiN, this structure show very difference between n-poly and p-poly in sheet resistance. But Ni/Co/Ni/TiN, structure show less difference. Also junction leakage is good.

• ETRI Journal
• /
• 제39권2호
• /
• pp.284-291
• /
• 2017

Drain-induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short-channel effect for nano metal-oxide semiconductor field-effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two-dimensional approximations based on the energy-conservation equation for channel electrons in FETs, which is different from the former field-penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration-dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.