• 제목/요약/키워드: Nano-Electronics

검색결과 743건 처리시간 0.026초

Enhancement in the photocurrent of ZnO nanoparticles by thermal annealing

  • Byun, Kwang-Sub;Cho, Kyuong-Ah;Jun, Jin-Hyung;Seong, Ho-Jun;Kim, Sang-Sig
    • 전기전자학회논문지
    • /
    • 제13권1호
    • /
    • pp.57-64
    • /
    • 2009
  • The optoelectrical characteristics of the ZnO nanoparticles (NPs) annealed in vacuum or oxygen condition from $200^{\circ}C$ to $600^{\circ}C$ were examined. Increased on-off ratio (or, the ratio of photocurrent to dark current) was observed when they were annealed at $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$ with the values enhanced about 4 orders compared to the as-prepared ZnO NPs in both annealing conditions, while the maximum efficiency was shown at the annealing temperature of $600^{\circ}C$ for the ZnO NPs annealed in vacuum with the value of 29.8 mA/W and at the temperature of $500^{\circ}C$ for those annealed in oxygen condition with the value of 40.3 mA/W. Photoresponse behavior of the ZnO NPs annealed in oxygen showed the sharp increase right after the ir exposure to the light followed by the slow decay and saturation during steady illumination, differing from the ZnO NPs annealed in vacuum which only exhibited the gradual increase. This difference occurred due to the curing effect of the oxygen vacancies. SEM images indicated no change in their morphologies with annealing, indicating the change in their internal structures by annealing, and most remarkably at $600^{\circ}C$. As for their photoluminescence(PL) spectra, the decrease of the deep-level(DL) emission was observed when they were annealed in oxygen at $400^{\circ}C$, and not at $200^{\circ}C$ and $600^{\circ}C$.

  • PDF

Growth of O- and Zn-polar ZnO films by DC magnetron sputtering

  • Yoo, Jin-Yeop;Choi, Sung-Kuk;Jung, Soo-Hoon;Cho, Young-Ji;Lee, Sang-Tae;Kil, Gyung-Suk;Lee, Hyun-Jae;Yao, Takafumi;Chang, Ji-Ho
    • 한국결정성장학회지
    • /
    • 제22권1호
    • /
    • pp.1-4
    • /
    • 2012
  • O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an $Al_2O_3$ substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/$Al_2O_3$ substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.

Magnetic soft mold를 이용한 나노 와이어 그리드 편광 필름 연구 (A study on the Nano Wire Grid Polarizer Film by Magnetic Soft Mold)

  • 조상욱;장성환;최두선;허석환;정명영
    • 마이크로전자및패키징학회지
    • /
    • 제21권2호
    • /
    • pp.85-89
    • /
    • 2014
  • 본 연구에서는 자기 소프트 몰드를 이용하여 피치 143.59 nm의 고 성능 NWGP(Nano Wire Grid Polarizer) 필름의 새로운 제조 방법을 제안하였다. 제작된 편광필름은 $6cm{\times}6cm$의 PET기판위에 알루미늄 격자 구조를 가지고 있으며, 이는 TFT-LCD(Thin Flat Transistor Liquid Crystal Display)에 응용 가능할 것으로 보인다. 자기 소프트 몰드는 너비 70.39 nm의 규격으로 제작되었으며, 이를 이용하여 2단계의 복제과정을 거쳐 제작되어진다. 이를 통해 본 연구에서는 기판위에 75.68 nm 선폭과 64.76 nm의 높이 143.59 nm pitch를 가지는 격자구조의 NWGP 패턴을 제작하였다. 또한, 이는 800 nm 파장 영역 대에서 75%의 최대 투과율과 10%의 최소 투과율을 가지는 것을 확인하였다. 따라서, 본 공정을 통해 독창적인 저 비용의 나노패터닝 기술로 디스플레이 산업에서 적용되어 질 것으로 보여진다.

초정밀 엔드밀링 가공조건 최적화를 통한 금속상의 3차원 이미지 구현 (Realization of 3D Image on Metal Plate by Optimizing Machining Conditions of Ultra-Precision End-Milling)

  • 이재령;문승환;제태진;정준호;김휘;전은채
    • 한국정밀공학회지
    • /
    • 제33권11호
    • /
    • pp.885-891
    • /
    • 2016
  • 3D images are generally manufactured by complex production processes. We suggested a simple method to make 3D images based on a mechanical machining technology in this study. We designed a tetrahedron consisted of many arcs having the depth of $100{\mu}m$ and the pitch of $500{\mu}m$, and machined them on an aluminum plate using end-milling under several conditions of feed-rate and depth of cut. The area of undeformed chip including depth of cut and feed-rate can predict quality of the machined arcs more precisely than the undeformed chip thickness including only feed rate. Moreover, a diamond tool can improve the quality than a CBN tool when many arcs are machined. Based on the analysis, the designed tetrahedron having many arcs was machined with no burr, and it showed different images when observed from the left and right directions. Therefore, it is verified that a 3D image can be designed and manufactured on a metal plate by end-milling under optimized machining conditions.

Fabrication and Vibration Characterization of a Partially Etched-type Artificial Basilar Membrane

  • Kang, Hanmi;Jung, Youngdo;Kwak, Jun-Hyuk;Song, Kyungjun;Kong, Seong Ho;Hur, Shin
    • 센서학회지
    • /
    • 제24권6호
    • /
    • pp.373-378
    • /
    • 2015
  • The structure of the human ear is divided into the outer ear, the middle ear, and the inner ear. The inner ear includes the cochlea that plays a very important role in hearing. Recently, the development of an artificial cochlear device for the hearing impaired with cochlear damage has been actively researched. Research has been carried out on the biomimetic piezoelectric thin film ABM (Artificial Basilar Membrane) in particular. In an effort to improve the frequency separation performance of the existing piezoelectric thin film ABM, this paper presents the design, fabrication, and characterization of the production and performance of a partially etched-type ABM material. $O_2$ plasma etching equipment was used to partially etch a piezoelectric thin film ABM to make it more flexible. The mechanical-behavior characterization of the manufactured partially etched-type ABM showed that the overall separation frequency range shifted to a lower frequency range more suitable for audible frequency bandwidths and it displayed an improved frequency separation performance. In addition, the maximum magnitude of the vibration displacement at the first local resonant frequency was enhanced by three times from 38 nm to 112 nm. It is expected that the newly designed, partially etched-type ABM will improve the issue of cross-talk between nearby electrodes and that the manufactured partially etched-type ABM will be utilized for next-generation ABM research.

GaAs 기반 1300 nm 파장대역 InAs 양자점 레이저 다이오드의 발진 특성 (Lasing Characteristics of GaAs-Based 1300 nm Wavelength Region InAs Quantum Dot Laser Diode)

  • 김광웅;조남기;송진동;이정일;박정호;이유종;최원준
    • 한국진공학회지
    • /
    • 제18권4호
    • /
    • pp.266-271
    • /
    • 2009
  • Migration Enhanced Molecular Beam Epitaxy를 통해 성장한 GaAs 기반 1300 nm 파장대역 InAs 양자점 레이저 다이오드의 발진 특성을 연구하였다. 펄스 및 상온 연속 동작에서 전류 주입 및 동작 온도 변화에 따른 L-I 특성과 발진 스펙트럼 측정을 통해 바닥준위(1302 nm)에서 여기준위(1206 nm)로의 발진 파장의 전환을 관찰하였으며 이는 양자점 바닥준위 이득의 포화로 이해된다. 상온 펄스 동작시 문턱전류 밀도는 92 A/$cm^2$, 발진 파장은 1311 nm이며, 상온 연속 동작시 문턱전류 밀도는 247 A/$cm^2$, 발진 파장은 1320 nm이다.

전자선에 의해 제조된 나노 clay 함유 에폭시 수지의 특성 (Characterization of Epoxy Resin Containing Nano Clay Prepared by Electron Beam)

  • 박종석;이승준;임윤묵;정성린;권희정;신영민;강필현;노영창
    • 방사선산업학회지
    • /
    • 제9권1호
    • /
    • pp.9-13
    • /
    • 2015
  • Epoxy resin is widely used as aerospace, automobile, construction and electronics due to their good mechanical and electrical properties and environmental advantages. However, the inherent flammability of epoxy resin has limited its application in some field where good flame retardancy is required. Nano clay can enhance the properties of polymers such as flames retardancy and thermal stability. In this study, we have investigated the nanoclay filled epoxy composite, which has good flame retardancy while maintaining high mechanical properties. The cured epoxy resins were obtained using an electron beam curing process. The nano clays were dispersed in epoxy acrylate solution and mechanically stirred. The prepared mixtures were irradiated using an electron beam accelerator. The composites were characterized by gel content and thermal/mechanical properties. Moreover, the flammability of the composite was evaluated by limited oxygen index (LOI). The flame retardancy of nano clay filled epoxy composite was evidently improved.

반도체 공정용 기능수의 용해오존 분해장치에 관한 연구 (A Study on Dissolved Ozone Decomposer in Ozonated Water for Semiconductor Process)

  • 문세호;채상훈;손영수
    • 대한전자공학회논문지SD
    • /
    • 제48권5호
    • /
    • pp.6-11
    • /
    • 2011
  • 반도체 및 LCD 세정공정에 사용된 오존수 속의 용해오존을 분해할 수 있는 시스템을 개발함으로써 향후 고성능-저가격의 반도체, LCD PR 박리 및 세정 공정에 적용할 수 있는 핵심 공정기술을 확보하였다. 이 기술을 적용하면 반도체 웨이퍼 및 LCD 평판의 PR 박리 세정 공정을 보다 빠르고 저렴한 비용으로 수행할 수 있으므로 반도체 및 LCD 공정 생산성의 향상을 꾀할 수 있다.

초정밀 리니어 스테이지용 인치웜 타입 구동장치 개발 (Development of an Inchworm type Actuator for an Ultra Precise Linear Stage)

  • 문찬우;이성호;정중기;이종배
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2002년도 합동 추계학술대회 논문집 정보 및 제어부문
    • /
    • pp.309-312
    • /
    • 2002
  • Precision stage is essential device for semiconductor equipments, fiber optic assembly systems and micro machines. In this paper, we develop a piezo-electric inchworm type actuator for long stroke ultra precision linear stages, and implement a controller to interface with commercial motion controllers. It provides fast implementation of precise position control system substituting for rotary motor. In the future, using a laser interferometer as a position sensor, we plan to implement a nano meter precision stage.

  • PDF

자장 세기 측정용 진공 센서의 제작 및 패키징 (Fabrication and packaging of the vacuum magnetic field sensor)

  • 박흥우;박윤권;이덕중;김철주;박정호;오명환;주병권
    • 센서학회지
    • /
    • 제10권5호
    • /
    • pp.292-303
    • /
    • 2001
  • 본 연구에서는 수평형 전계 방출 소자를 제작하고 그 특성을 측정하였다. 이를 진공자장 센서에 이용하기 위하여 Lorentz 원리를 응용하여 센서를 설계하고 제작하였다. $POCl_3(10^{20}cm^{-3})$ 도핑된 다결정 실리콘을 전계 방출 소자의 음극 및 양극 재료로 이용하였으며 그 두께는 각각 $2\;{\mu}m$였다. PSG(두께 $2\;{\mu}m$)를 희생층으로 사용하여 최종 단계에서 불산을 이용하여 제거하고 승화건조법을 이용하여 소자의 기판 점착 현상을 방지하였다. 제작된 소자를 유리기판 #1 위에 silver paste로 고정시키고 Cr 전극 패드와 와이어본딩 한 뒤 진공내에서 양극접합공정을 이용하여 소자를 $1.0{\times}10^{-6}\;Torr$에서 진공 실장하였다. 실장 후 게터를 활성화하여 내부진공도를 향상시켰다. 이렇게 패키징된 소자는 두달여 기간 동안 특별한 특성저하 없이 잘 동작되었으며 그 이상의 기간에 대해서는 확인하지 못하였다. 패키징된 자장 센서는 패키징하기 전 진공챔버 내에서 보인 특성치와 별다른 차이 없이 잘 동작되었으며 단지 약간의 전류 감소 현상만이 관찰되었다. 측정된 센서의 감도는 약 3%/T로서 작은 값이었으나 그 가능성을 확인할 수는 있었다.

  • PDF