• 한국통신학회논문지
• /
• 제42권4호
• /
• pp.716-722
• /
• 2017

본 논문에서는 은 나노 분말과 카본 잉크를 이용하여 13.56 MHz에서 동작하는 완전 인쇄형 NFC 태그를 설계 및 제작하였다. 제안된 NFC 태그는 50 pF의 내부 커패시턴스를 갖는 NFC 태그 IC에 적용하기 위해서, $2.74{\mu}H$의 인덕턴스를 갖는 원형 코일을 PI 필름 위에 설계하였으며, 전통적인 회로 제작 방식인 PCB 제조 공정에 비해 대면적 및 대량 생산, 저비용, 친환경공정 등의 장점을 가진 인쇄 전자 기술인 스크린 프린팅 기법을 이용하여 제작하였다. 제안된 구조는 단일 층으로 구현된 원형 코일, 코일 외곽과 중심부 사이에 칩 실장을 위한 점퍼 패턴, 그리고 코일과 점퍼 패턴과의 절연을 위한 절연 패턴으로 구성되어 있으며, 은 나노 분말과 카본 잉크를 이용하여 전도성 패턴과 절연 패턴을 중첩 인쇄하여 구현하였다. 본 논문에서 제안된 NFC 태그의 성능 검증을 위해 인쇄선폭, 두께, 선저항, 밀착력 그리고 환경 신뢰성 평가 등을 수행하였으며, 완전 인쇄형 제작 방식 기반 NFC 태그의 적합성을 확인하였다.

• 마이크로전자및패키징학회지
• /
• 제27권4호
• /
• pp.55-60
• /
• 2020

태양광 발전소에 설치된PERC 태양광 모듈 스트링-어레이는 고전압의 전위차로 인해 여전히 potential-induced degradation(PID) 열화 현상이 여전히 보고되고 있다. 이는 태양전지 모듈 커버글라스의 Na+ 이온이 태양전지 봉지재(EVA)를 투과하여 셀 표면으로 전이되고 결함이 많이 분포되어 있는 ARC(SiOx/SiNx) 계면에 양전하가 축적됨으로써 shunt-Resistance(Rsh)가 감소되고 누설전류량이 증가되어 태양전지 출력이 저하되는 현상이다. 본 연구에서는 이를 방지하기 위해 나노임프린트 리소그래피(nano-imprint lithography, NIL) 방식을 이용하여 모스아이(Moth-eye) 나노 구조를 광학 필름 후면에 증착 하였고, 이를 커버글라스와 EVA 사이에 삽입하여 태양광 미니 모듈을 구성하였다. PID 열화 현상을 확인하기 위해 IEC 62804-1 규격에 기반한 셀 단위 PID 열화가속시험을 진행하였고, Light I-V, Dark I-V 분석을 통해 출력(Pmax), 효율(Efficiency), 병렬 저항(shunt resistance)을 확인하였다. 그 결과 기존의 태양전지는 초기 효율 19.76%에서 6.3% 감소하였으나 모스아이 나노 구조 광학 필름(Moth-eye film)이 적용된 태양전지는 0.6% 만 감소하여 PID 열화 현상이 방지되는 것을 확인하였고, 모스아이 나노구조를 통해 투과도가 4% 향상되어 미니 모듈 출력이 2.5% 향상되었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.104-104
• /
• 2009

Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제9권4호
• /
• pp.240-248
• /
• 2009

Moore's law has driven silicon technology scale down aggressively, and it results in significant increase of leakage current on nano-meter scale CMOS. Especially, in mobile devices, leakage current has been one of designers' main concerns, and thus many studies have introduced low power methodologies. However, there are few studies to minimize implementation cost in the mixed use of the methodologies to the best of our knowledge. In this paper, we introduce industrial applications of low power design methodologies for the decrease of leakage current. We focus on the design cost reduction of power gating and reverse body bias when used together. Also, we present voltage scale as an alternative to reverse body bias. To sustain gate leakage current, we discuss the adoption of high-$\kappa$ metal gate, which cuts gate leakage current by a factor of 10 in 32 nm CMOS technology. A 45 nm mobile SoC is shown as the case study of the mixed use of low power methodologies.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.17-18
• /
• 2008

In this paper, 1%-nitrogen doped Nickel was used for improvement of thermal stability of Ni-Germanide. Proposed Ni-N(1%)/TiN structure has shown better thermal stability, sheet resistance and less agglomeration characteristic than pure Ni/TiN structure. During the germanidation process, it is believed that the nitrogen atoms in the deposited nickel layer can suppress the agglomeration of Ni germanide by retarding the diffusion of Ni atoms toward silicon layer, hence improve the thermal stability of Ni-germanide.

• 한국정밀공학회지
• /
• 제30권6호
• /
• pp.578-583
• /
• 2013

The lighting devices using organic light emitting diodes (OLEDs) are actively researched because of the various advantages such as high power efficiency and 2-dimensitonal lighting emitting. To commercialize those OLED lighting devices, the manufacturing cost must be downed to comparable price with conventional light sources. Here, we demonstrate a reverse gravure-offset or gravure off-set printed metal electrode for the auxiliary electrode for OLED lighting devices. For the fabricated OLED's auxiliary electrode, we used Ag nano-paste and printed metal grid structure with a line width and spacing of several ten and hundred micrometer by using gravure-offset printing. In the end the printing metal grid pattern are successfully achieved by optimization of various experimental conditions such as printing pressure, printing speed and printing delay time.

• 전자공학회논문지D
• /
• 제35D권9호
• /
• pp.42-47
• /
• 1998

현재의 전자빔 묘화의 한계를 극복할 수 있는 마이크로 전자빔 시스템의 전자 광학 렌즈를 제작하였고 전자빔 묘화실험을 통하여 이를 검증하였다. 마이크로머시닝기술을 이용하여 실리콘 전극을 제작하고 이를 양극 접합을 통해 조립하여 다층 전극의 전자 광학 렌즈를 제작하였다. 완성된 전자 광학 소자를 초고진공 챔버에 장착하여, STM(Scanning Tunneling Microscope) 팁에서 방출된 전자빔의 focusing 특성을 관찰하였으며 전자를 집속하여 리소그라피를 수행하였다. E-beam 감광막은 PMMA(Poly-methylmethacrylate)를 사용하였고 0.13㎛의 패턴을 형성시킬 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권2호
• /
• pp.153-162
• /
• 2014

We show that carbon nanotube sensors with gold particles on the single-walled carbon nanotube (SWNT) network operate as Schottky barrier transistors, in which transistor action occurs primarily by varying the resistance of Au-SWNT junction rather than the channel conductance modulation. Transistor characteristics are calculated for the statistically simplified geometries, and the sensing mechanisms are analyzed by comparing the simulation results of the MOSFET model and Schottky junction model with the experimental data. We demonstrated that the semiconductor MOSFET effect cannot explain the experimental phenomena such as the very low limit of detection (LOD) and the logarithmic dependence of sensitivity to the DNA concentration. By building an asymmetric concentric-electrode model which consists of serially-connected segments of CNTFETs and Schottky diodes, we found that for a proper explanation of the experimental data, the work function shifts should be ~ 0.1 eV for 100 pM DNA concentration and ~ 0.4 eV for $100{\mu}M$.

• 한국세라믹학회지
• /
• 제50권3호
• /
• pp.186-194
• /
• 2013

The relationship between composition and properties of enamel glass was investigated by introducing a mixture design. The enamel glass was manufactured by mixing various components under the following constraints: $45{\leq}SiO_2{\leq}55$, $10{\leq}B_2O_3{\leq}18$, $6{\leq}Na_2O{\leq}15$, $1{\leq}Li_2O{\leq}6$, $5{\leq}K_2O{\leq}10$, $0{\leq}TiO_2{\leq}8$, $0{\leq}ZrO_2{\leq}8$, 13.3MO (mol %). A mathematical model for the calculation of some properties of enamel glasses as a function of their composition was developed by the experimental statistical method. The results showed that the proposed model with the experimental measurement were in good agreement and the mixture experimental design was an effective method for optimizing the composition of the enamel glass with respect to its properties.

• Transactions on Electrical and Electronic Materials
• /
• 제8권2호
• /
• pp.73-78
• /
• 2007

The crystallization temperature in GeTe solid electrolyte films was improved by in situ-nitrogen doping by rf magnetron co-sputtering technique at room temperature. The crystallization temperature of $250\;^{\circ}C$ in electrolyte films without nitrogen doping increased by approximately $300\;^{\circ}C$, $350\;^{\circ}C$, and above $400\;^{\circ}C$ in films deposited with nitrogen/argon flow ratios of 10, 20, and 30 %, respectively. A PMC memory device with $Ge_{45}Te_{55}$ solid electrolytes deposited with nitrogen/argon flow ratios of 20 % shows reproducible memory switching characteristics based on resistive switching at threshold voltage of 1.2 V with high $R_{off}/R_{on}$ ratios. Nitrogen doping into the silver saturated GeTe electrolyte films improves the crystallization temperature of electrolyte films and does not appear to have a negative impact on the switching characteristics of PMC memory devices.