• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.240-240
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• 2010

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (~5.2 eV) and extremely high dot density (${\sim}\;1.2{\times}10^{13}/cm^2$) was fabricated. Its structural effect for multiple layers was evaluated and compared to one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with 2-4 multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN)-tunneling could be a candidate structure for future flash memory.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.322-325
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• 2005

The shrinking critical dimensions of modern technology place a heavy requirement on optimizing feature shapes at the micro- and nano scale. In addition, the use of ion beams in the nano-scale world is greatly increased by technology development. Especially, Focused ion Beam (FIB) has a great potential to fabricate the device in nano-scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the re-deposition effect due to the sputtered atoms. In recent years, many approaches and research results show that the re-deposition effect is the most outstanding effect to overcome or reduce in fabrication of micro and nano devices. A 2D string based simulation software AMADEUS-2D $(\underline{A}dvanced\;\underline{M}odeling\;and\;\underline{D}esign\;\underline{E}nvironment\;for\;\underline{S}putter\;Processes)$ for ion milling and FIB direct fabrication has been developed. It is capable of simulating ion beam sputtering and re-deposition. In this paper, the 2D FIB simulation is demonstrated and the characteristics of ion beam induced direct fabrication is analyzed according to various parameters. Several examples, single pixel, multi scan box region, and re-deposited sidewall formation, are given.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.50-50
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• 2005

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.549-550
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.269-270
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• 2009

The biased vertical alignment (BVA) liquid crystal (LC) mode shows a has a distinct advantage of lower manufacture cost due to the elimination of a lithographic process step to form either ITO-patterning or protrusions on the color-filter substrates. However, those devices have complex voltage conditions which is the respective induce voltage on common electrode, pixel electrode and bias electrode when positive and negative frame. In order to overcome the complex voltage condition, the pretilt angles is controlled by photo polymerization of the UV-curable reactive mesogen (RM). According to our studies, voltages to the cell are critical to achieve an optimized surface-modified quality BVA (Q-BVA) mode which provides the well defined reorientation of the LCs with respect to an electric field.

• Proceedings of the SAREK Conference
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• 2006.06a
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• pp.1219-1224
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• 2006

This paper presents the friction and anti-wear characteristics of nano-oil with n mixture of a refrigerant oil and carbon nano-particles in the thrust slide-bearing of scroll compressors. Frictional loss in the thrust slide-bearing occupies a large part of total mechanical loss in scroll compressors. The characteristics of friction and anti-wear Lising nano-oil is evaluated using the thrust bearing tester for measuring friction surface temperature and the coefficient of friction at the thrust slide-bearing as a function of normal loads up to 4,000 N and orbiting speed up to 3,200 rpm. It is found that the coefficient of friction increases with decreasing orbiting speed and normal force. The friction coefficient of carbon nano-oil is 0.015, while that of pure oil is 0.023 under the conditions of refrigerant gas R-22 at the pressure of 5 bars. It is believed that carbon nano-particles can be coated on the friction surfaces and the interaction of nano-particles between surfaces can be improved the lubrication in the friction surfaces. Carbon nano-oilenhances the characteristics of the anti-wear and friction at the thrust slide-bearing of scroll compressors.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1034-1037
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• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of 0.3Cd/$m^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.148.1-148.1
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• 2009

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.125-126
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• 2008

본 연구에서는 금속 나노입자 함량에 따른 유기나노복합체에서의 광학 및 전기전도도 특성변화를 분석하였다. 유기나노복합체 전극은 전기전도성을 가리고 있는 PEDOT : PSS(poly(3,4-ethylenedioxythio- phone):poly(styrenesulfonate))나노 입자를 기반으로 하며 이 복합제에 미량의 Ag nano-particle을 첨가하여 전기전도도 특성을 향상시키는 연구를 진행하였다. Ag nano-particle은 전체 중량 대비 01 - 0.4%의 범위에서 첨가하였으며 실험결과 0.1%의 첨가 비율에서 약 5% 정도의 전기전도도 특성 향상이 확인되었다. 또한 광투과도 변화를 분석해본 결과 0.4%까지의 Ag nano-particle 첨가 비율에서는 광투과도의 비율이 크게 감소되지 않는 것으로 파악되었다.