• Journal of the Korean institute of surface engineering
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• v.25 no.6
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• pp.287-292
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• 1992

Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.943-949
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• 2008

We report on the development of transition edge sensors for x-ray detection. The sensor technology was based on the fabrication of a superconducting film on a thin membrane. A bilayer of a superconductor, Ti, and a noble metal, Au, was e-beam evaporated on a micromachined SiNx. Another Au layer was evaporated on the two side edges of the bilayer in order not to be affected by structural imperfections at the boundaries. With the method described in the present report, the superconducting transition temperature of the device was consistently achieved to near 80 mK with a sharp transition. The energy spectrum ueasured with the device provided 37 eV FWHM for 5.9 x-rays. We also discuss the design and fabrication considerations as well as the performance of the device in detail.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.3
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• pp.130-137
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• 2012

Blast walls are integral structures at the typical offshore topside module to provide safety barriers for personnel and critical equipment against any blast loading and hydrocarbon explosions. The blast wall structures are usually configured with stainless steel. It can be referred as the good mechanical properties of the stainless steel against blast load, which features the characteristics of significant energy absorption and ductility. In this study, the proposed designs of corrugated panel are examined in order to determine the best design which satisfies the design criteria. The criteria on maximum deflection and stress are used to decide the best design. The effect of inclined angle of profile on deformation characteristics of blast wall is also performed. The numerical study was performed by using NX Nastran 7.5.

• Journal of Magnetics
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• v.4 no.2
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• pp.55-59
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• 1999

In an attempt to find an effective production way of the$ Sm_2Fe_{17}N_{x-}type material, the Sm_2Fe_{17-}$type alloy with chemical composition of Sm 22.7 wt.%, Fe72.3 wt.% Nb 5.0wt.% was subjected to a HD (hydrogen decrepitation) treatment prior to a nitrogenation, and its effect on the formation of the nitride material was investigated. The nitrogenation behaviours of the alloy were investigated using a TPA(thermopiezic analysis), TMA, and DTA under nitrogen gas, and XRD. It has been found that the previous HD treatment significantly facilitated the formation of $Sm_2Fe_{17}N_{x-}$type nitride, and this was accounted for by the clean surface and the finer particle size of the powder caused by the HD treatment. It has also been found that the hydrogen atoms existing in the initial HD-treated alloy were removed almost completely during the nitrogenation. The heat output associated with the nitrogenation of the previously HD-treated alloy was found to be significantly smaller than that of the as-cast alloy.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.218-224
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• 1990

Silicon nitride thin(SiNx) is deposited onto 3 inch silicon wafor using ECR plasma apparatus. For the two different plasma extraction windows size, the thin films which were deposited by changing the SiH4/N2 gas fole at at 1.5mTorr without substrate heating are analyzed through the XPS and wlliposometer measurements. The very uniform and good quality silicon nitride thin film were obtained with the analyzed results of the deposited films, and particularly, ion temperature perpendicular to the magnetic filed was nearly same as the neutral gas temperature. The large amount of plasma loss in the transport process following magnetic field lines could be seen from the plasma emission intensity measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.264.2-264.2
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• 2014

비휘발성 메모리는 전원이 공급되지 않아도 저장된 정보를 계속 유지하는 메모리로써 현재 다양한 차세대 전자소자의 집적화 구현을 위해 저전압 동작 및 저장능력의 향상 등에 대한 연구가 활발히 진행되고 있다. 이때 삽입되는 전하저장층의 경우 기존 널리 이용되는 질화막(SiNx) 외에 최근에는 산화 알루미늄(Al2O3) 등의 고유전상수 물질 뿐만 아니라, 밴드갭 조절을 통해 전하저장능력을 향상시키는 산화막(SiOx)에 대한 연구도 진행 중이다. 이번 연구에서는 전하저장능력을 향상시키기 위해 전하저장층으로 산화막을 이용할 뿐만 아니라, 기존의 평편한 구조가 아닌 표면 조절을 통해 전하저장능력을 보다 향상시키고자 한다. 또한 이번 연구에서는 비휘발성 메모리 소자의 응용을 위해 우선적으로 금속-절연체-반도체 형태의 MOOxOyS 구조를 이용하였다. 이 때 실리콘 표면적을 변화시키기 위해 이용된 실리콘 웨이퍼는 1) 평편한 실리콘, 2) 수산화암모늄, 이소프로필 알코올 및 탈이온수를 혼합한 용액에 식각시킨 삼각형 구조, 3) 불산, 질산 및 아세트산을 혼합한 용액에 식각시킨 라운드 구조이다. 정전용량-전압 측정을 통해 얻어진 메모리 윈도우는 1) 평편한 실리콘의 경우 약 5.1 V, 2) 삼각형 구조의 경우 약 5.3 V, 3) 라운드 구조의 경우 약 5.9 V를 얻었다. 이 때, 라운드 구조의 경우 가장 넓은 표면적으로 인해 상대적으로 전하트랩이 가장 많이 되어 메모리 윈도우가 가장 커지는 특성을 볼 수 있었다.

• Journal of Life Science
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• v.28 no.4
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• pp.408-414
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• 2018

Actein is the well-known active ingredient of Cimicifugae rhizoma (Black cohosh). In this study, we investigated and compared the binding affinity of tubocurarine, actein, and actein derivatives on the B&C domain of the acetylcholine binding protein through in silico computational docking studies. The three-dimensional crystallographic structure of the acetylcholine binding protein B&C domain was obtained from the PDB database (PDB ID: 2XYT). An in silico computational autodocking analysis was performed using PyRx, Autodock Vina, Discovery Studio Version 4.5, and NX-QuickPharm based on scoring functions. The actein showed an optimum binding affinity (docking energy), with the acetylcholine binding protein at -10.50 kcal/mol as compared to the tubocurarine (-9.80 kcal/mol). The interacting amino acids tryptophan 84 and tryptophan 147, in the B domain of the acetylcholine binding protein active site, significantly interacted with the actein and 27-deoxyactein, and (26R)-actein. The centroid XYZ grid position of the tubocurarine was X=38.300689, Y=112.053467, and Z=51.991022, but the actein and its derivatives showed values around X=26.4, Y=127.3, Z=43.7. These results clearly indicated that actein and its derivatives could be a more potent antagonist to the acetylcholine binding protein than tubocurarine. Therefore, the extract of Cimicifugae rhizoma or actein containing biomaterials can substitute for the botulinum toxin-mediated acetylcholine receptor regulation, and be applied to the anti-wrinkle cosmetics industry.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.55-60
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• 2020

The PERC photovoltaic (PV) modules installed in PV power plant are still reports potential-induced degradation (PID) degradation due to high voltage potential differences. This is because Na+ ions in the cover glass of PV modules go through the encapsulant (EVA) and transferred to the surface of solar cells. As positive charges are accumulated at the ARC (SiOx/SiNx) interface where many defects are distributed, shunt-resistance (Rsh) is reduced. As a result, the leakage current is increased, and decrease in solar cell's power output. In this study, to prevent of this phenomenon, a Moth-eye nanostructure was deposited on the rear surface of an optical film using Nano-Imprint Lithography method, and a solar mini-module was constructed by inserting it between the cover glass and the EVA. To analyze the PID phenomenon, a cell-level PID acceleration test based on IEC 62804-1 standard was conducted. Also analyzed power output (Pmax), efficiency, and shunt resistance through Light I-V and Dark I-V. As a result, conventional solar cells were decreased by 6.3% from the initial efficiency of 19.76%, but the improved solar cells with the Moth-eye nanostructured optical film only decreased 0.6%, thereby preventing the PID phenomenon. As of Moth-eye nanostructured optical film, the transmittance was improved by 4%, and the solar module output was improved by 2.5%.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.55.2-55.2
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• 2010

최근 태양전지에 대한 연구가 본격적으로 진행 중인 가운데 Local back contact 태양전지에 대한 연구가 새로운 이슈로 떠오르고 있다. LBC 구조의 태양전지는 후면 passivation에 대한 최적화 공정이 가장 중요하다. 후면 passivation으로 사용되는 물질로는 $SiO_2$, SiNx, $Al_2O_3$ 등의 산화막이 대표적이다. 본 연구에서는 LBC 구조 태양전지의 후면 passivation 박막으로 사용되는 $SiO_2$ 산화막의 공정가변에 따른 박막의 특성을 비교 분석하였다. $SiO_2$ 성장은 RTP를 사용하였다. 성장 온도 $850^{\circ}C$의 온도에서 진행하였으며, 4L/min의 $O_2$분위기에서 진행하였다. 공정 시간 5분 일 때 12.5nm, 15분 일 때 21.7nm의 두께의 박막을 성장 시킬 수 있었다. Carrier lifetime 확인 결과 박막의 두께가 얇을수록 lifetime이 향상함을 확인 할 수 있었고, C-V 측정을 통한 charge 비교를 통해 두께가 얇은 박막 일수록 더 적은 positive charge를 갖고있는 것을 확인 할 수 있었으며 이를 통해 passivation 효과가 우수함을 확인 할 수 있었다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.56.1-56.1
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• 2010

결정질 실리콘 태양전지의 표면 ARC(Anti-reflection Coating)layer는 반사도를 줄여 광 흡수율을 증가시키고, passivation 효과를 통하여 표면 재결합을 감소 시켜 태양전지의 효율을 높이는 중요한 역할을 한다. Silicon nitride 박막은 외부 stress 요인에 대해 안정성을 담보할 수 있어야한다. 따라서, 본 연구에서는 굴절률 가변에 따른 silicon nitride 박막을 PECVD를 이용하여 증착하고, 항온/항습 stability test를 통해 박막의 안정성을 확인하였다. Silicon nitride 증착을 위해 PECVD를 이용하였고, 공정압력 0.8Torr, 증착온도 $450^{\circ}C$, 증착파워 300W에서 실험을 진행하였다 박막의 굴절률은 1.9~2.3의 범위로 가변하였다. 항온/항습에 대한 신뢰성을 test 하기 위하여 5시간동안의 test를 1cycle로 하여 20회 동안 실험을 실시하였다. 증착된 silicon nitride 박막의 lifetime은 firing 이후 57.8us로 가장 높았으며, 항온/항습 test 이후에도 유사한 경향을 확인 할 수 있었다. 또한, 100h 동안의 항온/항습 test 결과 silicon nitride 박막의 lifetme 감소는 8.5%에 불과했다. 본 연구를 통하여 온도와 습도의 변화에 따른 결정질 실리콘 태양전지의 SiNx 박막의 증착 공정 조건에 대한 신뢰성을 확인 할 수 있었다.