• 제목/요약/키워드: NM64

검색결과 335건 처리시간 0.023초

고온소각에 의한 PCBs 함유 폐기물처리에 관한 연구 (A Study on the PCBs-containing Waste Treatment by High Temperature Incineration)

  • 김성중;김동혁
    • 유기물자원화
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    • 제17권1호
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    • pp.88-95
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    • 2009
  • 본 연구는 국내 유해폐기물 고온소각설비를 이용한 PCBs 함유 폐기물의 소각처리 가능성을 알아보기 위해 정상조업시와 PCBs 절연유 투입시의 배가스, 비산재, 바닥재에 대한 다이옥신, Total-PCBs, Co-PCBs 분석을 실시하였으며, 바닥재 및 비산재에 함유된 중금속 성분의 용출 특성을 파악하기 위하여 중금속 용출시험을 실시하였다. 그 결과 PCBs 함유폐기물의 배기가스 중의 Dioxin 농도는 $0.00699{\sim}0.00763ng-TEQ/Nm^3$으로 정상조업시 $0.0192ng-TEQ/Nm^3$보다 낮은 것으로 나타났으며 Co-PCBs $0.00043{\sim}0.00112ng-TEQ/Nm^3$, Total PCBs $3.06{\sim}3.87ng/m^3$으로 분석되었다. 바닥재의 경우에는 Dioxin 0.00225~0.00630ng-TEQ/g, Co-PCBs 0.00027~0.00082ng-TEQ/g, Total PCBs 0.9~2.6ng/g, 비산재의 경우 Dioxin 0.00164~0.00344ng-TEQ/g, Co-PCBs 0.00053~.00054ng- EQ/g, Total PCBs 0.64~0.84ng/g로 나타났다. 바닥재와 비산재의 중금속용출 시험결과 바닥재에서는 모두 용출되지 않았으나, 비산재의 경우 Pb성분이 31.01~237.7ppm으로 용출기준을 초과하는 것으로 나타났으며 대기오염물질의 농도는 모두 배출허용기준치 이하로 나타났다.

콜로이드법을 이용한 고분자전해질 연료전지용 백금전극 촉매의 제조 (Synthesis of Electrode Catalyst for Polymer Electrolyte Membrane Fuel Cells Using Colloidal Method)

  • 박진남
    • 청정기술
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    • 제19권1호
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    • pp.59-64
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    • 2013
  • 고분자전해질 연료전지에서 사용되는 전도성 카본에 백금이 담지된 전극촉매를 콜로이드법을 이용하여 합성하였다. 콜로이드법 합성을 위한 백금 전구체로는 PSA (platinum sulfite acid)를 사용하였으며, 고가의 전구체를 대체하기 위해 CPA (chloroplatinic acid)를 사용하여 합성하였다. PSA를 전구체로 하여 제조한 전극촉매는 10~40 wt% 담지량에서 3.5 nm 이하의 백금 입자크기와 90% 이상의 백금 담지수율을 보였다. CPA를 전구체로 사용한 경우에는 10~40 wt% 담지량에서 4.4 nm 이하의 백금 입자 크기를 보였으며 담지수율은 80% 이상이었다. 제조한 20 wt% Pt/VXC72 전극촉매로 MEA (membrane electrode assembly)를 제조하여 I-V 곡선을 측정하였으며, 제조한 전극촉매를 이용한 막전극접합체는 상용전극촉매를 사용한 경우와 동등한 성능을 보였다.

Properties of IZTO Thin Films Deposited on PET Substrates with The SiO2 Buffer Layer

  • Park, Jong-Chan;Kang, Seong-Jun;Chang, Dong-Hoon;Yoon, Yung-Sup
    • 한국세라믹학회지
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    • 제52권1호
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    • pp.72-76
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    • 2015
  • 150-nm-thick In-Zn-Tin-Oxide (IZTO) films were deposited by RF magnetron sputtering after a 10 to 50-nm-thick $SiO_2$ buffer layer was deposited by plasma enhanced chemical vapor deposition (PECVD) on polyethylene terephthalate (PET) substrates. The electrical, structural, and optical properties of the IZTO/$SiO_2$/PET films were analyzed with respect to the thickness of the $SiO_2$ buffer layer. The mechanical properties were outstanding at a $SiO_2$ thickness of 50 nm, with a resistivity of $1.45{\times}10^{-3}{\Omega}-cm$, carrier concentration of $8.84{\times}10^{20}/cm^3$, hall mobility of $4.88cm^2/Vs$, and average IZTO surface roughness of 12.64 nm. Also, the transmittances were higher than 80%, and the structure of the IZTO films were amorphous, regardless of the $SiO_2$ thickness. These results indicate that these films are suitable for use as a transparent conductive oxide for transparency display devices.

Hot Wall Epitaxy(HWE) 방법에 의해 성장된 $CuInS_2$ (Growth and Characterization of $CuInS_2$ Single Crystal Thin Film by Hot Wall Epitaxy)

  • 최승평;홍광준
    • 한국결정학회지
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    • 제11권3호
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    • pp.137-146
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    • 2000
  • The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

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가시오가피(Acanthopanax senticosus)의 석유에테르 추출물 중 polyacetylene계 물질의 동정 (Identification of the Polyacetylenes extracted from Acanthopanax Senticosus by Petroleum Ether)

  • 양효진;김은미;장규섭
    • 농업과학연구
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    • 제35권1호
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    • pp.11-17
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    • 2008
  • 가시오가피를 실온에서 petroleum ether로 추출한 polyacetylene의 동정하기 위하여 TLC, HPLC, UV spectrum, IR, NMR로 수행하였다. TLC에 전개시킨 결과, polyacetylene 표준품과 동일한 band가 fraction 5에서 확인되었으며, HPLC에서 fraction 5를 분리시킨 결과 retention time이 4.40, 5.36, 6.40분이었다. 이를 UV spectrum에서 확인한 결과, 6.40분의 peak(compound 3)에서 polyacetylenes의 파장인 231.0nm, 239.0nm, 257.0nm을 나타내었다. IR spetrum에서 triple bond $2256cm^{-1}$과 double bond $1654cm^{-1}$의 전형적인 peak를 나타내었으며, $^{13}C$-NMR(400MHz, $CDCl_3$)에서 polyacetylenes 전형적인 64.0, 71.2, 74.2, 80.2ppm은 2개의 triple bond에 의한 peak와 121.89, 133.0ppm에서 internal double bond로 결합된 2개의 peak를 확인 할 수 있었다.

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ISSR 분자 마커를 이용한 왕대속 대나무의 유전적 다양성 및 계통 관계 (Genetic Diversity and Phylogenetic Relationship of Genus Phyllostachys by ISSR Markers)

  • 이송진;허만규;허홍욱
    • 생명과학회지
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    • 제17권11호
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    • pp.1482-1487
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    • 2007
  • ISSR분자 마커를 이용하여 왕대속 대나무의 유연관계를 분석 실시하였다. 전세계적으로 왕대속에 속하는 4종은 경제학적, 생태학적으로 중요한 식물 자원중 하나이다. 총 11개의 ISSR 프라이머 중 9개의 프라이머에서 증폭이 일어 났으며 총 64개의 밴드를 확인 할 수 있었다. ISSR분석결과 왕대속 4종의 대나무에서 70.49%인 43개의 다형현상이 나타났다. 4개의 분류군으로 분류된 왕대속 대나무의 집단내 다양성(Hs)은 0.092,집단간 다양성(Gst)은 0.499로 나타났다. 각 종에 대한 유전자 유동(Nm)은 0.559로 나타났다. 따라서 왕대속에 속하는 4종의 유전자 유동(Nm)은 아주 낮음을 알 수 있었다 4종의 분류군에 대한 유전자 다양성(Ht)은 0.291로 낮게 나타났으며 ISSR 마커로 명확하게 그들은 분류가 되었다. 또한 왕대속의 4종은 단일계통임을 확인할 수 있었다.

An aluminum-based reflective nanolens array that enhances the effectiveness of a continuous-flow ultraviolet disinfection system for livestock water

  • Changhoon Chai;Jinhyung Park
    • Journal of Animal Science and Technology
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    • 제65권1호
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    • pp.258-270
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    • 2023
  • Climate change has worsened droughts and floods, and created conditions more likely to lead to pathogen contamination of surface water and groundwater. Thus, there is a growing need to disinfect livestock water. Ultraviolet (UV) irradiation is widely accepted as an appropriate method for disinfecting livestock water, as it does not produce hazardous chemical compounds and kills pathogens. However, UV-based disinfection inevitably consumes electricity, so it is necessary to improve UV disinfection effectiveness. Aluminum-based reflective nanolens arrays that enhanced the effectiveness of a continuous-flow UV water disinfection system were developed using electrochemical and chemical processes, including electropolishing and two-step anodization. A continuous UV disinfection system was custom designed and the parts were produced using a three-dimensional printer. Electropolished aluminum was anodized at 40 and 80 V in 0.3 M oxalic acid, at 120 and 160 V in 1.0 M phosphoric acid, and at 200 and 240 V in 1.5 M citric acid. The average nanolens diameters (D) of the aluminum-based reflective nanolens arrays prepared using 40, 80, 120, 160, 200, and 240 V anodization were 95.44, 160.98, 226.64, 309.90, 296.32, and 339.68 nm, respectively. Simple UV reflection behind irradiated water disinfected Escherichia coli O157:H7 in water more than did the non-reflective control. UV reflection and focusing behind irradiated water using an aluminum-based reflective nanolens array disinfected E. coli O157:H7 more than did simple UV reflection. Such enhancement of the UV disinfection effectiveness was significantly effective when a nanolens array with D 226.64 nm, close to the wavelength of the irradiated UV (254 nm), was used.

n-ZnO/p-GaN 이종접합 LED의 전기.광학적 특성

  • 김준;송창호;신동휘;조영범;배남호;변창섭;김선태
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.41.1-41.1
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    • 2011
  • 본 연구에서는 MOCVD법으로 사파이어 기판위에 u-GaN를 성장한 후 Mg을 도핑시켜 p-GaN를 성장하고, RF 스퍼터를 이용하여 n-ZnO를 도포하여 n-ZnO/p-GaN 이종접합을 형성한 후 진공증착기를 이용하여 Au/Ni를 증착시켜 발광다이오드(LED)를 제작하고 전기 광학적 특성을 조사하였다. 두께가 500 nm인 u-GaN 위에 성장된 p-GaN의 운반자 농도는 $1.68{\times}10^{17}\;cm^{-3}$ 이었다. 그리고 150, 300 nm 두께의 p-GaN에 대하여 측정된 DXRD 반치폭은 각각 450 arcsec, 396 arcsec 이었고, 상온에서 2.8~3.0 eV 영역에서 Mg 억셉터와 관련된 광루미네센스가 검출되었다. RF 스퍼터링에 의해 0.7 nm/min의 속도로 증착된 n-ZnO 박막은 증착 두께에 따라 비저항이 27.7 $m{\Omega}{\cdot}cm$ 에서 6.85 $m{\Omega}{\cdot}cm$ 까지 감소하였다. 그리고 n-ZnO 박막은 (0002)면으로 우선 배향되었으며, 상온에서 에너지갭 관련된 광루미네센스가 3.25 eV 부근에서 주되게 검출되었다. n-ZnO/p-GaN 이종접합 LED의 전류전압 특성곡선은 다이오드 방정식에 만족하는 특성을 나타내었다. 다이오드 지수는 3 V 이하 영역에서 1.64, 3~5 V 영역에서 0.85이었다. 그리고 5 V 이상 영역에서 공간전하의 제한을 받았으며, 다이오드 지수는 3.36이었다. 한편, 역방향 전류전압 특성은 p-GaN 박막의 두께에 영향을 받았으며, p-GaN 박막의 두께가 150, 300 nm 일 때 각각의 누설 전류는 $1.3{\times}10^{-3}$ mA와 $8.6{\times}10^{-5}$ mA 이었다. 상온에서 측정된 EL 스펙트럼의 주된 발광피크는 430 nm이었고, 반치폭은 49.5 nm이었다.

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구리 스퍼터링 의류소재의 전기전도성과 스텔스 특성 - 의류소재 기공 크기 변화를 중심으로 - (Electrical conductivity and stealth characteristics of copper-sputtered clothing materials - Focusing on changes in the pore size of clothing materials - )

  • 한혜리
    • 복식문화연구
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    • 제31권1호
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    • pp.107-123
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    • 2023
  • This research studied the electrical characteristics, IR transmission characteristics, stealth functions, and thermal characteristics of infrared thermal-imaging cameras of copper-sputtered samples. Nylon samples were prepared for each density as a base material for copper-sputtering treatment. Copper-sputtered NFi, NM1, NM2, NM3, NM4, and NM5, showed electrical resistance of 0.8, 445.7, 80.7, 29.7, 0.3, and 2.2 Ω, respectively, all of which are very low values; for the mesh sample, the lower the density, the lower the electrical resistance. Measuring the IR transmittance showed that the infrared transmittance of the copper-sputtered samples was significantly reduced compared to the untreated sample. Compared to the untreated samples, the transmittance went from 92.0-64.1%. When copper sputtered surface was directed to the IR irradiator, the IR transmittance went from 73.5 to 43.8%. As the density of the sample increased, the transmittance tended to decreased. After the infrared thermal imaging, the absolute values of △R, △G, and △B of the copper phase increased from 2 to 167, 98 to 192, and 7 to 118, respectively, and the closer the density of the sample (NM5→NFi), the larger the absolute value. This proves that the dense copper phase-up sample has a stealth effect on the infrared thermal imaging camera. It is believed that the copper-sputtered nylon samples produced in this study have applications in multifunctional uniforms, bio-signal detection sensors, stage costumes, etc.

Some nanotoxicity effects of copper (60-80 nm) and copper oxide (40 nm) nanoparticles on Artemia salina

  • Isil Canan Cicek Cimen;Durali Danabas;Mehmet Ates
    • Advances in nano research
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    • 제16권5호
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    • pp.501-508
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    • 2024
  • In this study, nanotoxicity tests were made by exposure of Artemia salina to copper (Cu 60-80 nm) and copper oxide (CuO 40 nm) nanoparticles (NPs) at different concentrations (0.2, 1, 5, 10, 25, and 50 mg/L). The LC50 value of Cu (60-80 nm) NPs on the A. salina individuals at the beginning (0), 24th, 48th and 72nd hours and elimination period was 52.37 mg/L while the LC50 value of CuO (40 nm) NPs was 55.39 mg/L. The results of UV-Vis absorbance values showed that all statistical data revealed that maximum effect was observed between 24-30 hours and 25 ppm absorbance concentration was more effective. The multiple R, correlation coefficient (R2) and adjusted R2 values of Cu NP for the suitable Quadratic model were, respectively; 92.96 %, 86.42 % and 76.71 % while they are 98.31 %, 96.64 % and 94.25 % for CuO NP. Also, the data, was indicated effect size significantly changed based on the type and size of NP. Considering the microscope results, it was clearly noticed that A. salina organisms took the NPs in to their body. The accumulation in the gut of A. salina was observed and the images were taken with phase contrast microscope for both of NPs. The highest decrease for survival rates of A. salina individuals exposed to Cu NP was observed in the 10 ppm concentration (43.47 %) and in the 5 ppm concentration (46.20 %) for CuO NP. The results revealed that Cu and CuO NPS showed different toxic effects and that Cu NPs were more toxic than CuO.