• Title/Summary/Keyword: NDRO

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Characteristics of ferroelectric $YMnO_3$ thin film with low dielectric constant for NDRO FRAM (비파괴 판독형 메모리 소자를 위한 저유전율 강유전체 $YMnO_3$박막의 특성 연구)

  • 김익수;최훈상;최인훈
    • Journal of the Korean Vacuum Society
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    • v.9 no.3
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    • pp.258-262
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    • 2000
  • $YMnO_3$thin films are deposited on Si(100) and $Y_2O_3/Si(100)$ substrate by radio frequency sputtering. The deposition condition of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of $YMnO_3$film and the size of memory window. The results of x-ray diffraction show that the film deposited in the oxygen partial pressure of 0% is highly oriented along c-axis after annealing at $870^{\circ}C$ for 1 hr in oxygen ambient. However, the films deposited on Si and $Y_2O_3/Si$ in the oxygen partial pressures of 20% show $Y_2O_3$ peak, the excess $Y_2O_3$ in the $YMnO_3$film suppresses the c-axis oriented crystallization. Especially memory windows of the $Pt/YMnO_3/Y_2O_3/Si$ capacitor are 0.67~3.65 V at applied voltage of 2~12 V, which is 3 times higher than that of the film deposited on $Y_2O_3/Si$ in 20% oxygen (0.19~1.21 V) at the same gate voltage because the film deposited in 0% oxygen is well crystallized along c-axis.

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Growth and electrical properties of $Sr_2$$({Ta_{1-x}},{Nb_x})_2$)$O_7$ thin films by RF sputtering (RF Sputtering을 이용한 $Sr_2$$({Ta_{1-x}},{Nb_x})_2$)$O_7$ 박막의 성장 및 전기적 특성)

  • In, Seung-Jin;Choi, Hoon-Sang;Lee, Kwan;Choi, In-Hoon
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.367-371
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    • 2001
  • In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

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