• Journal of Electrical Engineering and Technology
• /
• v.11 no.4
• /
• pp.939-942
• /
• 2016

One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (N_d) of the active layer on the J-V curve. When the active layer thickness was varied (for N_d = 8×10¹⁷ cm^-3) from 800 nm to 100 nm, the reverse saturation current density (J_o) changed from 3.56×10^-5 A/cm² to 9.62×10^-11 A/cm² and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (N_d = 4×10¹⁵ cm^-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (J_o = 9.62×10^-11 A/cm²) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.10
• /
• pp.767-770
• /
• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.1
• /
• pp.17-23
• /
• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.5
• /
• pp.409-417
• /
• 2003

We have studied electrical properties and luminous efficiency of organic light-emitting diodes(OLEDs) with different buffer layer and cathodes in a temperature range of 10 K and 300 K. Four different device structures were made. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris(8-hydroxyquinolinato) aluminum(III) (Alq$_3$) as an electron transport and omissive layer, and poly(3,4-ethylenedioxythiophene) :poly (styrenesulfonate) (PEDOT:PSS ) as a buffer layer. And LiAl was used as a cathode. Among the devices, the ITO/PEDOT:PSS/TPD/Alq$_3$/LiAl structure has a low energy-barrier height for charge injection and show a good luminous efficiency. We have got a highly efficient and low-voltage operating device using the conductive PEDOT:PSS and low work-function LiAl. From current-voltage characteristics with temperature variation, conduction mechanisms are explained SCLC (space charge limited current) and tunneling one. We have also studied energy barrier height and luminous efficiency at various temperature.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.208-211
• /
• 1999

Abstract - Electrical characteristics or asymmetric n-MOSFET's with different source and drain geometry are experimently investigated using test structures having various gate width. Saturation drain current and resistance in linear region are estimated by a simple schematic model, which consists of conventional device having parasitic resistor. A comparison of experimental results of symmetric and asymmetric devices gives the parasitic resistance caused by abnormal device structure. The suggested model shows good agreement with the measured drain current for both forward- and reverse-modes.

• Proceedings of the Korean Biophysical Society Conference
• /
• 2001.06a
• /
• pp.26-26
• /
• 2001

Inactivation of N-type calcium current has been reported to be both voltage dependent and Ca$\^$2＋/ dependent. We have investigated the effects of Ba$\^$2＋/ and Ca$\^$2＋/ on N-channel inactivation in rat superior cervical ganglion neurons using the whole cell configuration of patch clamp technique. Inactivation was larger in Ca$\^$2＋/ than in Ba$\^$2＋/ even with 20 mM BAPTA.(omitted)

• Proceedings of the Korean Biophysical Society Conference
• /
• 2003.06a
• /
• pp.37-37
• /
• 2003

We have shown the $Ca^{2+}$-activated chloride current is present in cardiac myocyte in rabbit pulmonary vein (Kim et al., 2002). This current amplitude was increased as [N $a^{+}$]$_{i}$ was increased and we suggested this chloride current may be involve in the spontaneous action potential frequency change. Since this current is activated by the increase of intracellular $Ca^{2+}$, we would like to test what is the inducer of the increase of [C $a^{2+}$]$_{i}$ between a L-type $Ca^{2+}$-current or a reverse mode of N $a^{+}$-C $a^{2+}$ exchange current. White rabbit (1.5 kg) was used and anesthetized with Ketamin (100 mg/kg). Pulmonary vein (PV) was isolated and sleeve area between left atrium and PV was dissected. Using collagenase (Worthington 0.7 mg/cc), single cardiac myocytes were isolated. In the presence of 15 mM of N $a^{＋}$, three steps of voltage pulses were applied (holding potential : -40 ㎷, -80 ㎷ for 50 msec, 30 ㎷ for 5 msec, 10 ㎷ steps from -70 ㎷ to 60 ㎷). The inward and outward tail current was activated after brief 5 msec prepulse. The outward tail current was blocked by the removal of extracellular chloride substituted by glucuronic acid or by a chloride channel blocker, 5 mM 9-AC. But the inward tail current was still remained even though the amplitude was decreased. The reversal potentials were changed to the direction of the change of chloride equilibrium potential ( $E_{Cl}$ ) but the shift of equilibrium potential was not enough to match to the theoretical equilibrium potential shift. In the presence of L-type $Ca^{2+}$ channel blocker, nifedipine 1 uM, inward tail currents were greatly reduced but the outward current tail currents were still remained. In the presence of N $a^{+}$-C $a^{2+}$ exchange current blocker, 10 uM KB-R7943, the inward and outward tail currents were blocked almost completely. We tried to test the $Ca^{2+}$sensitivity of the chloride current with various [C $a^{2+}$]$_{i}$ in pipette solution from 100 nM to 1 uM but we failed to activate $Ca^{2＋}$-activated chloride currents even though the cell became contracted in the presence of 1 uM $Ca^{2+}$. From these results, we could conclude that the increase of [C $a^{2+}$]$_{i}$ to activate the outward $Ca^{2+}$-activated chloride current was mainly induced by the activation of the reverse mode of N $a^{+}$-C $a^{2+}$ exchanger, But for the increase of [C $a^{2+}$]$_{i}$ to activate the inward tail current, L-type $Ca^{2+}$ current may be the major provoking current. Since the cytosolic increase of [C $a^{2+}$]$_{i}$ through pipette solution have failed to activate $Ca^{2+}$-activated chloride current, this chloride current may have very low $Ca^{2+}$ sensitivity or a comparmental increase $Ca^{2+}$ such as in subsarcolemmal space may activate the chloride current. Since there are several reports and models that the increase of $Ca^{2+}$ in subsarcolemmal space would be over several to tens of uM, both possibility may be valid together.uM, both possibility may be valid together.

• Journal of the Korean institute of surface engineering
• /
• v.37 no.5
• /
• pp.249-252
• /
• 2004

Effects of HA and TiN coating on the electrochemical characteristics of Ti-6AI-4V alloys for bone plates were investigated using various test methods. Ti-6AI-4V alloys were fabricated by using a vacuum induction furnace and bone plates were made by laser cutting and polishing. HA was made of extracted tooth sintered and then tooth ash was used as HA coating target. The TiN and HA film coating on the surface were carried on using electron-beam physical vapor deposition (EB-PVD) method. The corrosion behaviors of the samples were examined through potentiodynamic method in 0.9% NaCI solutions at $36.5\pm$$1^{\circ}C$ and corrosion surface was observed using SEM and XPS. The surface roughness of TiN coated bone plates was lower than that of tooth ash coated plates. The structure of TiN coated layer showed the columnar structure and tooth ash coated layer showed equiaxed and anisotrophic structure. The corrosion potential of the TiN coated specimen is comparatively high. The active current density of TiN and tooth ash coated alloy showed the range of about $1.0xl0^{-5}$ $A\textrm{cm}^2$, whereas that of the non-coated alloy was$ 1.0xl0^{-4}$ $A\textrm{cm}^2$. The active current densities of HA and TiN coated bone plates were smaller than that of non-coated bone plates in 0.9% NaCl solution. The pitting potential of TiN and HA coated alloy is more drastically increased than that of the non-coated alloy. The pit number and pit size of TiN and HA coated alloy decreased in compared with those of non-coated alloy. For the coated samples, corrosion resistance increased in the order of TiN coated, tooth ash coated, and non-coated alloy.

• Electrical & Electronic Materials
• /
• v.7 no.1
• /
• pp.25-31
• /
• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Journal of the Korean institute of surface engineering
• /
• v.24 no.1
• /
• pp.34-34
• /
• 1991

Corrosion behavior of TiN coated steel was studied in terms of thickness of interlayer Ti and TiN coating TiN was are ion plated to a thickness of 1$\mu\textrm{m}$ and 2$\mu\textrm{m}$ respectively with interlayer coating of Ti of 1$\mu\textrm{m}$, 2$\mu\textrm{m}$ and 3$\mu\textrm{m}$. Corrosion resistance of TiN coated steel was evaluated by anodic palarization test in 1N H2SO4 as well as salt spray test. Porosity of each coating was also tested by using SO2 test method. Corrosion current density decreased with increasing TiN coating thickness and Ti interlayer coating markedly enhanced the corrosion resistance. Ti interlayer coating of 2$\mu\textrm{m}$ and 3$\mu\textrm{m}$ prior to 2$\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 2. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ti interlayer. Ti interlayer coating was also very effective in improvement of corrosion resistance under salt atmosphere.