• Korean Journal of Materials Research
• /
• v.16 no.6
• /
• pp.367-372
• /
• 2006

Polytetrafluoroethylene (PTFE) surface was modified for improving hydrophilicity by ion irradiation in environmental gas of $N_2$ and $NH_3$, respectively. The water contact angle onto the PTFE surface increased from $104{\circ}$ to over $140{\circ}$ by Ar ion irradiation in $N_2$ gas. In the case of $NH_3$ as environmental gas, there were a slight increase of contact angle from ion dose of $1{\times}10^{15}\;to\;5{\times}10^{15}\;ions/cm^2$, and its dramatic decrease to the value of 35o at the conditions of ion dose higher than $1{\times}10^{16}\;ions/cm^2$. It was found from SEM results that the surface morphology of PTFE was changed into one with filament structure after Ar ion irradiation in $N_2$ gas environments. On the contrary, Ar ion irradiation in $NH_3$ gas condition induced the PTFE surface with network structure. Hydrogen ion irradiation resulted in a little change of PTFE surface morphology, comparing with the case of Ar ion irradiation. The water contact angle of hydrogen ion irradiated PTFE surface in reactive gas decreased with increment of ion dose. Hydrogen ion irradiation could improve hydrophilicity with little change of surface morphology. It might be considered from FT-IR results that the improvement in wettability of PTFE surface by ion irradiation in $N_2$ and $NH_3$ gases could be due to the hydrophilic groups of NHx bonds.

• Molecules and Cells
• /
• v.25 no.2
• /
• pp.158-162
• /
• 2008

Recent molecular genetics studies have revealed that cyclic electron transport around photosystem I is essential for normal photosynthesis and growth of plants. Chloroplastic NAD(P)H dehydorgenase (NDH) complex, a homologue of the complex I in respiratory electron transport, is involved in one of two cyclic pathways. Recent studies on the function and structure of the NDH complex are reviewed.

• Journal of The Korean Astronomical Society
• /
• v.47 no.1
• /
• pp.1-13
• /
• 2014

We analyze the dependence of disk morphology (arm class, Hubble type, bar type) of nearby spiral galaxies on the galaxy environment by using local background density (${\Sigma}_n$), projected distance ($r_p$), and tidal index (T I) as measures of the environment. There is a strong dependence of arm class and Hubble type on the galaxy environment, while the bar type exhibits a weak dependence with a high frequency of SB galaxies in high density regions. Grand design fractions and early-type fractions increase with increasing ${\Sigma}_n$, $1/r_p$, and T I, while fractions of flocculent spirals and late-type spirals decrease. Multiple-arm and intermediate-type spirals exhibit nearly constant fractions with weak trends similar to grand design and early-type spirals. While bar types show only a marginal dependence on ${\Sigma}_n$, they show a fairly clear dependence on $r_p$ with a high frequency of SB galaxies at small $r_p$. The arm class also exhibits a stronger correlation with $r_p$ than ${\Sigma}_n$ and T I, whereas the Hubble type exhibits similar correlations with ${\Sigma}_n$ and $r_p$. This suggests that the arm class is mostly affected by the nearest neighbor while the Hubble type is affected by the local densities contributed by neighboring galaxies as well as the nearest neighbor.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.1
• /
• pp.1-3
• /
• 2002

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed typical I-V characteristics. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Solar Energy
• /
• v.8 no.1
• /
• pp.41-48
• /
• 1988

Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

• Journal of the Korean Society of Food Science and Nutrition
• /
• v.22 no.6
• /
• pp.811-814
• /
• 1993

Properties of a protease purified from Sarcodon asparatus(Berk.) S. Ito have been investigated. The enzyme displays as a glycosylated serine protease. The sequence for the 21 amino acids of the N-terminal side in the enzyme was determined by automated sequence analysis. The sequence was V-T-T-K-Q-T-N-A-P-W-G-L-G-N-I-S-T-T-N-K-L-.

• Journal of Satellite, Information and Communications
• /
• v.10 no.4
• /
• pp.6-11
• /
• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different GPNS(Gate to Primary $N^+$ Diffusion Space) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device with FPW(Full P-Well) structure and non-CPS(Counter Pocket Source) implant shows typical SCR-like characteristics with low on-resistance(Ron), low snapback holding voltage(Vh) and low thermal breakdown voltage(Vtb), which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW(Partial P-Well) structure and optimal CPS implant demonstrate the improved ESD protection performance as a function of GPNS variation. GPNS was a important parameter, which is satisfied design window of ESD protection device.

• Korean Journal of Crystallography
• /
• v.10 no.2
• /
• pp.105-109
• /
• 1999

Ar 기류 하에서 Re(N-C6H3-2,6-i-Pr2)2Cl3(py) (1)과 propionaldehyde (C2H5CHO)가 반응하여 생성된 혼합물에서, [cis-ReCl4(py)(N-C6H3-2,6-i-Pr2)·(NH2-C6H3-2,6-i-Pr2)] (2)가 분리되었다. 이 화합물의 구조가 X-ray 회절법으로 규명되었다. 착물 2의 결정학 자료: 단사정계 공간군 P21/n, a=11.555(1) Å, b=27.066(3) Å, c=11.881(1) Å, β=117.991(8)°, Z=4, R(wR2)=0.0332(0.0851.

• Journal of the Korean Chemical Society
• /
• v.47 no.1
• /
• pp.26-30
• /
• 2003

The dinuclear $Ag_2[Phen]_2[S_2P(OPr)_2]_2$(phen=1,10-phenanthroline; Pr=propyl), was prepared by the reaction of bis(dipropyldithiophosphato) silver(I) complex with 1,10-phenanthroline ligand, and its structure was determined by X-ray crystallography. The two dipropyldithiophosphato ligands each bridge two silver atoms to form an eight-membered $Ag_2S_4P_2$ ring, while the 1,10-phenanthroline molecule coordinates to a silver atom to complete the local tetrahedral geometry for the metal ion. The Ag-S bond distances are 2.559(1) and 2.567(1)${\AA}$, and the Ag-N bond distances are 2.366(3) and 2.471(3)${\AA}$.

• Current Photovoltaic Research
• /
• v.11 no.4
• /
• pp.103-107
• /
• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.