• Korean Journal of Materials Research
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• v.9 no.1
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• pp.42-45
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• 1999

The room temperature optical transmission spectra of GaN /InGaN/GaN single quantum wells (SQW) and InGaN/GaN heterostructures grwon by low pressure metalorganic chemical vapor deposition have been measured. The dependence of the absorption edges of the GaN/InGaN/GaN SQW on the well width has been determined from the transmission spectra. The result shows that the absorption edge of GaN/InGaN/GaN SQW shifts towards lower energy as increasing the well width. The dependence of the absorption edges of the InGaN/GaN heterostructures on InN mole fraction has also been determined from the transmission spectra. The result is compared with calculated values obtained from Vegards's laws. Our result shows a good agreement with the calculated values.

• Korean Journal of Materials Research
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• v.24 no.4
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• pp.194-200
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• 2014

Metallic Cr film coatings of $1.2{\mu}m$ thickness were prepared by DC magnetron sputter deposition method on c-plane sapphire substrates. The thin Cr films were ammoniated during horizontal furnace thermal annealing for 10-240 min in $NH_3$ gas flow conditions between 400 and $900^{\circ}C$. After annealing, changes in the crystal phase and chemical constituents of the films were characterized using X-ray diffraction (XRD) and energy dispersive X-ray photoelectron spectroscopy (XPS) surface analysis. Nitridation of the metallic Cr films begins at $500^{\circ}C$ and with further increases in annealing temperature not only chromium nitrides ($Cr_2N$ and CrN) but also chromium oxide ($Cr_2O_3$) was detected. The oxygen in the films originated from contamination during the film formation. With further increase of temperature above $800^{\circ}C$, the nitrogen species were sufficiently supplied to the film's surface and transformed to the single-phase of CrN. However, the CrN phase was only available in a very small process window owing to the oxygen contamination during the sputter deposition. From the XPS analysis, the atomic concentration of oxygen in the as-deposited film was about 40 at% and decreased to the value of 15 at% with increase in annealing temperature up to $900^{\circ}C$, while the nitrogen concentration was increased to 42 at%.

• Journal of Embryo Transfer
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• v.20 no.2
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• pp.157-162
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• 2005

To find out the possible inefficiencies of artificial inseminators at rectovaginal insemination in cows, inseminators' skill were evaluated by controlling the semen thawing procedure adopted and by using the technique of dye deposition in the genital tract of slaughtered cows. This was followed by refreshment training for the inseminators. Thirty seven artificial insemination technicians regularly working in the government, cooperative and NGO (Non Government Organization) artificial insemination programmes at different places of Bangladesh were included in the study. Individual technicians were asked to thaw a semen straw and deposit dye in the genital tract of slaughtered cows following the procedures they would have adopted in their actual practices of insemination. The time and water temperature adopted by technicians were recorded and genital tract after sham artificial insemination was dissected to determine the site of dye deposition. Then, the inseminators took part in a three days intensive training program. The training program was ended up with the same tests for thawing frozen semen straw and dye deposition in the genital tract of slaughtered cows. At pre training evaluation, only $25\%\;and\;72\%\;(n=36)$ inseminators adopted co..ect thawing time and temperature, respectively. At post training evaluation, all inseminators thawed semen straws for proper time and temperature. At pretraining evaluation, $21(57\%),\;11 (30\%)\;and\;3(8\%)$ inseminators deposited dye at the body of uterus, in the vagina or in cervix, and into the horn of uterus, respectively. In $2(5\%)$ cases dye did not pass into the genital tract, instead back flowed through the space between the barrel of insemination gun and sheath. At post training evaluation, all inseminators successfully deposited dye in the body of uterus. Frequent evaluation of inseminators' skill and subsequent training would help improvement of the artificial insemination technicians' skill.

• Journal of Radiation Protection and Research
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• v.28 no.4
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• pp.353-360
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• 2003

The concentration of $^{137}Cs$, the particle size, and the contents of TOC, H, N and S were measured for sediments collected in the adjacent sea to Yangnam, Korea. The concentrations of $^{137}Cs$ in sediments are in the range of $^{137}Cs$ for sediments strongly depend on particle size and TOC content of sediments. The results of multiple regression analysis suggest that humic substances may have great influence on the deposition of $^{137}Cs$ in sediment.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.9-13
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• 2004

Perylene is an interesting material known to have P-type and N-type characteristics at the same time. We prepared perylene thin-films in ultrahigh vacuum with two different deposition rates of 0.1 $\AA$/s and 1.0 $\AA$/s in order to study the dependence of film characteristics on the growth condition. The smaller average grain size with larger surface coverage as well as the better crystallinity were observed on the perylene film prepared under 1.0 $\AA$/s deposition rate in x-ray diffraction (XRD) and atomic force microscopy (AFM) study. For studying electrical property of the film, perylene organic thin-film transistor (OTFT) with gold contacts was fabricated on $SiO_2$/Si surface in UHV condition. The prepared perylene OTFT device shows P-type characteristic. The obtained hole mobility in the current-voltage characteristic curve was$2.23\times10^{-5}\textrm{cm}^2$/Vs.

• Korean Journal of Materials Research
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• v.18 no.12
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• pp.664-668
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• 2008

Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.24-25
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• 2006

SmBCO coated conductors were successfully fabricated using EDDC (Evaporation using Drum in Dual Chambers) deposition system that is a bath type co-evaporation system for fabrication of superconducting tape and divided into two chambers named evaporation chamber and reaction chamber. To obtain long and high quality superconducting coated conductor, it is very important to secure the uniformity of all the deposition parameters m the deposition system such as deposition temperature, oxygen partial pressure, compositional ratios and so on. Therefore, we investigated the distribution of the parameters along the axis of the drum m EDDC on which tapes were wound helically. When the temperature on the middle point of deposition zone was $700^{\circ}C$, that on the edge of deposition zone was $675^{\circ}C$. When the thickness of SmBCO layer on the middle point of deposition zone was 1063 nm, that on the edge of deposition zone was 899 nm. The partial pressure of oxygen was 5 mTorr in the reaction chamber while that was $7{\times}10^{-5}$Torr in the evaporation chamber. The composition ratio of Sm:Ba:Cu, that was measured by EDX, was very uniform along the axis of the drum. Under these deposition conditions, critical current distribution along the drum axis was 175 A/cm, 190A/cm, 217.5 A/cm, 182.5 A/cm, 175 A/cm with the interval of 9 cm between samples. It means that the EDDC system has the potential of fabricating (100m, 200A) class coated conductor.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.110-113
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• 2011

In this paper, we propose a new method for the fabrication of GaN microstructures formed only on the vertex of GaN pyramid by using of metal catalysts. GaN pyramidal structures were selectively grown on 3 ${\mu}m$ $SiO_2$ dot patterns followed by thin film deposition of Au and Cr only on the vertex area of the GaN pyramids with precisely controlled photolithography. After the metal deposition, the samples were loaded in the MOVPE reactor for the growth of GaN microstructures for 10 minutes. Temperature for the growth of the GaN microstructures was changed from $650^{\circ}C$ to $750^{\circ}C$. Rod type GaN microstructures were grown in the direction of vertical to the six {1-101} facets and the shape of the GaN microstructures was changed depend on the type of metal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.745-750
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• 2000

The (S $r_{0.85}$C $a_{0.15}$) Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method at various deposition temperature. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 200~500[$^{\circ}C$]. Also, the composition of SCT thin films were closed to stoichiometry (1.080~1.111 in A/B ratio). V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100[$^{\circ}C$] can be divided into four regions with different mechanism by the increasing current. The region I below 0.8[MV/cm]shows the ohmic conduction. The region II between 0.9~2[MV/cm] is in proportion to J∝ $E^{1.5}$ , the region III between 2~4[MV/cm] can be explained by the Child’s law, and the region IV above 4[MV/cm]is dominated by the tunneling effect.ect.

• Proceedings of the Korea Water Resources Association Conference
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• 2023.05a
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• pp.447-447
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• 2023

Soil organic carbon (SOC) is a critical indicator of soil fertility. Its importance in maintaining ecological balance has received widespread attention. However, global temperatures have risen by 0.8℃ since the late 1800s due to human-induced greenhouse gas emissions, resulting in severe disruptions in SOC dynamics. To study the impacts of temperature variations on SOC and soil respiration, we used the Soil Carbon and Landscape co-Evolution (SCALE) model, which was capable of estimating the spatial distribution of soil carbon dynamics. The study site was located at Heshan Farm (125°20'10.5"E, 49°00'23.1"N), Nenjiang County in Heilongjiang Province, Northeast China. We validated the model using observed soil organic carbon and soil respiration in 2015 and achieved excellent agreement between observed and modeled variables. Our results showed considerable influences of temperature increases on SOC and soil respiration rates at both erosion and deposition areas. In particular, changes in SOC and soil respiration at the deposition area were greater than at the erosion area. Our study highlights that the impacts of temperature elevations are considerably dependent on soil erosion and deposition processes. Thus, it is important to implement effective soil conservation strategies to maintain soil fertility under global warming.