• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.2253-2261
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• 2022

In this study, nano-scaled shielding materials were assembled and fabricated by doping different weight percentages of Nano-mercuric oxide (N-HgO) into Nano-Bentonite (N-Bent) based on using (100-x% N-Bent + x% N-HgO, x = 10, 20, 30, and 40 wt %). The fabricated N-HgO/N-Bent nanocomposites were characterized by FT-IR, XRD, and SEM and evaluated to evaluate their shielding properties toward gamma radiation by using four different γ-ray energies form three point sources; 356 keV from ¹³³Ba, 662 keV from ¹³⁷Cs as well as 1173, and 1332 keV from ⁶⁰Co. The γ-rays mass attenuation coefficients were plotted as a function of the doped N-HgO concentrations into N-HgO/N-Bent nanocomposites. The computed values of mass attenuation coefficients (µ_m), effective atomic number (Z_eff) and electron density (N_el) by the as-prepared samples were found to increase, while the half value layer (HVL) and mean free path (MFP) were identified to decrease upon increasing the N-HgO contents. It was concluded also that the increase in N-HgO concentration led to a direct increase in the mass attenuation coefficient from 0.10 to 0.17 cm²/g at 356 keV and from 0.08 to 0.09 cm²/g at 662 keV. However, a slight increase was observed in the identified mass attenuation coefficients at (1172 and 1332 keV).

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.139-144
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• 1997

Structurally, the rare earth cuprate superconductor of Nd2-xCexCuO4-$\delta$ has T' structure and has been known as having a quite complicated microstructural phenomena, so far. In order to be superconductivity, both small amount of cation substitution of Nd3+ by Ce4+ and oxygen reduction are required. In the present study the crystallographic study on the structural transition for the Nd2-xCexCuO4-$\delta$ crystal has been con-ducted by observing the CBED (Convergent Beam Electron Diffraction) pattern with STEM(Scanning Transmission Electron Microscope). Three different samples of Nd2CuO3,Nd1.85Ce0.15CuO4 and Nd1.85Ce0.15CuO3.965 were prepared by solid-state sintering and their CBED patterns were observed by STEM to study the structural transition accompanying the substitution of Ce and the reduction of oxygen. Experimental HOLZ lines of these samples were compared with those plotted by a computer-programmed simulation to de-termine the lattice parameter of Nd2-xCexCuO4-$\delta$ crystal.

• Journal of the Korean institute of surface engineering
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• v.45 no.1
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• pp.20-24
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• 2012

Multilayer passivation film on OLED with organic/inorganic hybrid structure as to diminish the thermal stress and expansion was researched to protect device from the direct damage of $O_2$ and $H_2O$ and improve life time characteristics. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The films consist of ITO(150 nm)/ELM200_HIL(50 nm)/ELM002_HTL(30 nm)/$Alq_3$: 1 vol.% Rubrene(30 nm)/$Alq_3$(30 nm) and LiF(0.7 nm)/Al(100 nm) which were formed in that order. Using LiF/$SiN_x$ as a buffer layer was determined because it significantly improved life time characteristics without suffering damage in the process of forming passivation film. Multilayer passivation film on buffer layer didn't produce much change in current efficiency, while the half life time at 1,000 $cd/m^2$ of OLED/LiF/$SiN_x$/E1/$SiN_x$ was 710 hours which showed about 1.5 times longer than OLED/LiF/$SiN_x$/E1 with 498 hours. futhermore, OLED/LiF/$SiN_x$/E1/$SiN_x$/E1/$SiN_x$ with 1301 hours showed about twice than OLED/LiF/$SiN_x$/E1/$SiN_x$ which demonstrated that superior characteristics of life time was obtained in multilayer passivation film. Through the above result, it was suggested using LiF/$SiN_x$ as a buffer layer could reduce the damage from the difference of thermal expansion coefficient in OLED with protective films, and epoxy layer in multilayer passivation film could function like a buffer between $SiN_x$ inorganic layers with relatively large thermal stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.138-138
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• 2010

플렉서블 디스플레이에 사용되고 있는 기판은 광학적 투과율이 우수하고 휘어지는 폴리머 기판이 많이 활용되고 있으나 대기중의 수분 및 산소와 같은 가스성분들이 기판을 통해 침투하여 디스플레이의 수명을 감소시킨다. 이러한 문제점을 해결하기 위해 투명하면서 절연특성이 뛰어나고 수분투과 방지 특성이 뛰어난 실리콘 화합물을 기반으로 하는 가스차단막의 연구가 활발히 진행되고 있다. 본 실험에서는 기존의 스퍼터링 장치에 비해 저온공정이면서 구조적으로 뛰어난 박막특성을 얻을 수 있는 대향타겟식 스퍼터링(Facing Targets System, FTS)법을 이용하여 PEN기판 위에 $SiO_x$, $SiO_xN_y$, $(SiO_2)_x(ZnO)_{100-x}$ (SZO)를 단일층또는 다층으로 증착한 박막들의 광학적, 구조적 및 수분 투과 방지 특성들을 알아보았다. $SiO_x$, $SiO_xN_y$, SZO박막들의 광학적 특성을 알아보기 위해 Shimadzu사의 UV-VIS spectrophotometer 장비를 사용하여 측정한 결과 가시광 영역에서 80%이상의 높은 광투과율을 나타내었다. 박막의 수분투과 방지 특성으로 Mocon사의 Permatran W3/31 system을 이용한 투습율을 측정결과 가스 차단막이 없는 Bare PEN에 비해 PEN기판 위에 $SiO_x$와 $SiO_xN_y$ 박막들을 단층 또는 다층으로 증착한 박막의 투습율이 감소한 것을 확인 할 수 있었다. 특히 SZO 박막의 경우 다른 가스차단막들과 비교해 가장 낮은 수분투과율을 나타내었다. 이는 향후 SZO를 기반으로 한 단층박막이나 무기/무기 또는 유기/무기의 다층 박막 형태를 가지는 가스차단막이 플렉서블 디스플레이에 적용 가능할 것이라 사료된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.154-154
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• 2010

표면 passivation 효과향상 기술은 고효율의 결정질 실리콘 태양 전지를 제작하는데 필수적 요소이다. passivation을 통해서 전자와 전공의 재결합 속도를 낮출 수 있어 $V_{oc}$가 상승하고, 전류 값 증가를 통하여 효율 향상의 결과를 얻을 수 있기 때문이다. passivation을 위해서 다양한 각도로 접근하였다. 첫째는 $SiN_x$를 이용한 passivation효과 실험 둘째는 plasma 분위기에서 $N_2O$를 이용한 passivation효과 실험 그리고 마지막으로 RTO를 이용한 passivation 효과를 실험하였다. 첫 번째 실험은 PECVD를 이용하여 $SiN_x$를 증착한 후 굴절률 1.9 2.66으로 가변 한 결과 $SiN_x$ n=2.66에서 $D_{it}=8.82{\times}10^9$ [$cm^{-2}eV^{-1}$]로 우수한 passivation 효과를 얻을 수 있었다. 두 번째 실험에서는 PECVD를 이용해서 $N_2O$ treatment 후 SiON 증착한 샘플을 이용하여 시간 가변에 따른 passivation 효과를 확인하였다. 그 결과 $N_2O$ 50sccm, 100mTorr, 20W, $400^{\circ}C$ 8min 조건에서 가장 우수한 passivation 효과를 관찰할 수 있었다. 마지막 실험은 RTP를 이용하여 $SiO_2$ 박막에 대한 온도, 시간에 따른 passivation효과를 확인하였다. 그 결과 $O_2$ 3L/min $800^{\circ}C$ 2~3nm 3min 공정에서 lifetime이 220us(n형)의 결과를 얻을 수 있었다. 상기 세 실험결과를 태양전지제작에 응용한다면 고효율의 태양전지 제작이 가능할 것으로 사료된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.49-53
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• 1996

Crystal structures of N $a_{x}$W $O_3$(0.5$\leq$x$\leq$1.0) were investigated. Transmission electron microscopy (TEM) studies indicate that there is an ordering of sodium ions when x=0.75. The direction of ordering is [110] and the wavelength of ordering is twice of the interplanar distance of (110) plane. It has been confirmed that a superlattice containing eight N $a_{0.75}$W $O_3$is the unit cell of ordered structure. In this unit cell, Na sites at (100) and ($\frac{1}{2}$$\frac{1}{2}$$\frac{1}{2}$) are vacant. The ordered phase was preserved after the annealing at $600^{\circ}C$ in the air. In reduced N $a_{x}$W $O_3$with x=0.5 and 1.0, extra phases were found to coexist with the partially ordered perovskite phase. After annealing at $600^{\circ}C$, theses phases were transformed into the phases found in calcined specimens.ens.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.486-487
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.97-101
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• 2004

W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.

• The Mathematical Education
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• v.11 no.1
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• pp.25-27
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• 1972

본논문은 n이 음이 아닌 정수로서 X＋A>O 일 때, f(x)=(X＋A)$^{-n}$ 모양의 확률변수 X의 기대치를 구하는 문제를 연구한 것이다. 이 문제는 이미 CHAO, STRAWDERMAN에 의해서 연구된바 있으나, 여기서는 더욱 간단하게 단순한 결과를 얻었으며 n=1일 때는 양 결과는 일치한다.

• Journal of the Korean Chemical Society
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• v.39 no.7
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• pp.552-558
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• 1995

The tetranuclear complexes, $X_2[M_{O4}O_12{R'C(NH_2)NO}_2](X= n-Bu_4N^+$, $R'=(CH_3)_2CH$, $CH_3CH_2CH_2$, $CH_3SCH_2$; $X=(CH_3)_2CHC(=NH_2)NH_2^+$, $R'=(CH_3)_2CH$; $X = CH_3CH_2CH_2C(=NH_2)NH_2^+$, $R'=CH_3_CH_2CH_2$; $X=CH_3SCH_2C(=NH_2)NH_2^+$, $R'=CH_3SCH_2)$ have been synthesized by the reactions of monomeric and polynuclear complexes with isobutyl-, butyl- and thiomethylacetamidoxime. The prepared complexes were identified by elemental analysis, infrared, $^1H$ NMR and $^{13}C$ NMR spectroscopy. The structure of complex ${(CH_3)_2CHC(NH_2)_2}_2[M_{O4}O_{12}{(CH_3)_2CHC(NH_2)NO}_2]$ was determined by X-ray single crystal diffraction. Crystal data are follows: Monoclinic, $P2_{1/c}$, $a=10.168(3){\AA}$, $b=11.768(1){\AA}$, $c=13.557(1){\AA}$, ${\beta}=102.08(1)^{\circ}$, $V=1586.2(5){\AA}^3$, Z=2, final R=0.026 for 2951($F_0>3s(F_0)$). This complex is composed of a planar cyclic $[Mo_4({\mu}-O)_4]$ and two ${\mu}_4$-amidoximate.