• Journal of the Korean Solar Energy Society
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• v.34 no.4
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• pp.23-29
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• 2014

Recently, in power system studies, Multiple Energy Carriers (MECs) such as Energy Hub has been broadly utilized in power system planners and operators. Particularly, Energy Hub performs one of the most important role as the intermediate in implementing the MECs. However, it still needs to be put under examination in both modeling and operating concerns. For instance, a probabilistic optimization model is treated by a robust global optimization technique such as multi-agent genetic algorithm (MAGA) which can support the online economic dispatch of MECs. MAGA also reduces the inevitable uncertainty caused by the integration of selected input energy carriers. However, MAGA only considers current state of the integration of selected input energy carriers in conjunctive with the condition of smart grid environments for decision making in Energy Hub. Thus, in this paper, we propose an immune algorithm based Multiple Energy Carriers System which can adopt the learning process in order to make a self decision making in Energy Hub. In particular, the proposed immune algorithm considers the previous state, the current state, and the future state of the selected input energy carriers in order to predict the next decision making of Energy Hub based on the probabilistic optimization model. The below figure shows the proposed immune algorithm based Multiple Energy Carriers System. Finally, we will compare the online economic dispatch of MECs of two algorithms such as MAGA and immune algorithm based MECs by using Real Time Digital Simulator (RTDS).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.13-13
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• 2010

Switching an elementary excitation by injecting a single carrier would offer the exciting opportunity for the ultra-high data storage technologies. However, there has been no methodology available to investigate the interaction of low energy discrete carriers with nano-structures. In order to map out the spatial dependency of such single carrier level interactions, we developed a pulse-and-probe algorithm, combining with low temperature scanning tunneling microscopy. The new tool, which we call single carrier spectroscopy, allows us to track the interaction with the target macrostructure with tunneling carriers on a single carrier basis. Using this tool, we demonstrate that it is possible not only to locally write and erase individual bi-solitons, reliably and reversibly, but also to track of creation yields of single and multiple bi-solitons. Bi-solitons are pairs of solitons that are elementary out-of-phase excitations on anti-ferromagnetically ordered pseudo-spin system of Si dimers on Si(001)-c(42) surfaces. We found that at low energy tunneling the single bisoliton creation mechanism is not correlated with the number of carriers tunneling, but with the production of a potential hole under the tip. An electric field at the surface determines the density of the local charge density under the tip, and band-bending. However a rapid, dynamic change of a field produces a potential hole that can be filled by energetic carriers, and the amount of energy released during filling process is responsible for the creation of bi-solitons. Our model based on the field-induced local hole gives excellent explanation for bi-soliton yield behaviors. Scanning tunneling spectroscopy data supports the existence of such a potential hole. The mechanism also explains the site-dependency of bi-soliton yields, which is highest at the trough, not on the dimer rows. Our study demonstrates that we can manipulate not just single atoms and molecules, but also single pseudo-spin excitations as well.

• Advances in Energy Research
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• v.7 no.2
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• pp.85-100
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• 2020

Distributed energy resources (DERs) are essential for coping with growing multiple energy demands. A microgrid (MG) is a small-scale version of the power system which makes possible the integration of DERs as well as achieving maximum demand-side management utilization. Hence, this study focuses on the analysis of optimal power dispatch considering economic aspects in a multi-carrier microgrid (MCMG) with price-responsive loads. This paper proposes a novel time-based demand-side management in order to reshape the load curve, as well as preventing the excessive use of energy in peak hours. In conventional studies, energy consumption is optimized from the perspective of each infrastructure user without considering the interactions. Here, the interaction of energy system infrastructures is considered in the presence of energy storage systems (ESSs), small-scale energy resources (SSERs), and responsive loads. Simulations are performed using GAMS (General Algebraic modeling system) to model MCMG, which are connected to the electricity, natural gas, and district heat networks for supplying multiple energy demands. Results show that the simultaneous operation of various energy carriers, as well as utilization of price-responsive loads, lead to better MCMG performance and decrease operating costs for smart distribution grids. This model is examined on a typical MCMG, and the effectiveness of the proposed model is proven.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.475-483
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• 2012

High capacitance X5R MLCCs based on $BaTiO_3$ ceramic dielectric layers exhibit a single broad, asymmetric arc shape impedance and modulus response over the wide frequency range between 1 MHz to 0.01 Hz. Analysis according to the conventional brick-layer model for polycrystalline conductors employing a series connection of multiple RC parallel circuits leads to parameters associated with large errors and of little physical significance. A new parametric impedance model is shown to satisfactorily describe the experimental spectra, which is a parallel network of one resistor R representing the DC conductivity thermally activated by 1.32 eV, one ideal capacitor C exactly representing bulk capacitance, and a constant phase element (CPE) Q with complex capacitance $A(i{\omega})^{{\alpha}-1}$ with ${\alpha}$ close to 2/3 and A thermally activated by 0.45 eV or ca. 1/3 of activation energy of DC conductivity. The feature strongly indicate the CK1 model by J. R. Macdonald, where the CPE with 2/3 power-law exponent represents the polarization effects originating from mobile charge carriers. The CPE term is suggested to be directly related to the trapping of the electronic charge carriers and indirectly related to the ionic defects responsible for the insulation resistance degradation.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 1991.04a
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• pp.147-152
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• 1991

양단이 고정된 보가 변형할 때에는 중간 평면의 신장을 수반하게 된다. 운동 의 진폭이 증가함에 따라 이 신장이 보의 동적 응답에 미치는 영향은 심각 하게 된다. 이러한 현상은 응력과 변형도와의 관계가 선형적이라 하더라도 변형도와 변위와의 관계식은 비선형이 되며 결국은 보의 비선형 운동방정식 을 낳게된다. 보는 연속계이긴하지만 근사를 위하여 다자유도계로 간주할 수 있다. 비선형 다자유도계에 있어서는 선형화된 계의 고유진동수끼리 적절한 관계를 가질 때 내부공진이 발생할 수 있다. 양단이 고정된 곧은 보의 비선 형 동적응답이 그동안 많이 연구되어 오고 있으며, 집중질량을 가지고 직각 으로 굽은 보의 해석을 위하여 내부공진을 고려한 해석적 혹은 실험적 연구 가 이루어져 왔다. 그중에서도 Nayfeh등은 조화가진 하의 핀과 꺾쇠로 고정 된(hinged-clamped) 보의 정상상태응답을 해석하기 위해 두 모우드 사이의 내부공진을 고려하였다. 이 연구에서는 세 모우드 사이의 내부공진을 고려하 여 강제진행 중인 보의 비선형 해석을 다루고자 한다. 이 문제에 관심을 갖 게 된 동기는 "연속계의 비선형 해석에서 더 많은 모우드를 포함시키면 어 떤 결과를 낳게 될 것인가\ulcorner"라는 질문에서 생겨난 것이다. 갤러킨 법을 이용 하여 비선형 편미분 방정식과 경계 조건으로 표현되는 이 문제를 연립 비선 형 상미분 방정식으로 변환한다. 다중시간법(the method of multiple scales) 을 이용하여 이 상미분 방정식을 정상상태에서의 세 모우드의 진폭과 위상 에 대한 연립비선형 대수방정식으로 변환한다. 이 대수방정식을 수치적으로 풀어서 정상상태 응답을 구하고 Nayfeh등의 결과와 비교한다. 결과와 비교한다. studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorp