• Journal of Integrative Natural Science
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• v.4 no.1
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• pp.11-14
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• 2011

Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polymethylmethacrylate (PMMA) to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated PMMA. Optically encoded free-standing DBR PSi dielectric mirrors retain the optical reflectivity. Optical characteristics of free-standing DBR PSi dielectric mirrors are stable and robust for 24 hrs in a pH 12 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.1
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• pp.75-78
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• 2002

Thirty three layer $TiO_2/SiO_2$ coating mirrors with high reflectance through a 620~820nm wavelength range have been designed and fabricated by electron beam evaporation method. Multilayer films were deposited on glass(BK7) and sequentially. The high reflector design is based on alternating high and low refractive index layers. $n_H$ and $n_L$ such that a "stopband"(or area of high reflectivity) is created that is centered around the design wavelength. ${\lambda}_0$. The measured transmittance spectrum with an incident wavelength at an incident angle of $40^{\circ}{\pm}7^{\circ}$ exhibited a reflectance of 99.9% at the wavelength of 620~820nm but high peak transmittance in the wavelength region from 700 to 740nm.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.391-396
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• 2006

Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polystyrene to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated polystyrene. Optically encoded DBR PSi/polystyrene composite films retain the optical reflectivity. Optical characteristics of DBR PSi/polystyrene composite films are stable and robust for 2 hrs in a pH=7 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1216-1219
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• 1994

A reflection type SEED from LP-MOCVD grown InGaAs/GaAs ESQW structures, with 5% In fraction, has been fabricated and its basic characteristics were investigated. Its intrinsic region consists of 50 pairs of alternating $100{\AA}$ $In_{0.05}Ga_{0.95}As$ barrier and $100{\AA}$ GaAs layers. And a multilayer reflector stack of $Al_{0.12}Ga_{0.88}As(641{\AA})-/AlAs(774{\AA})$ was vertically integrated below the p-i-n structures. The device processing includes the mesa etching, insulator deposition, indium metallization, and thermal alloy for Ohmic contact. Photocurrent spectrum measurement showed the exciton absorption peak at 905nm and availability as a optical switching device. This device showed a contrast ratio of 2:1 by the reflectance spectrum measurement.