• Title/Summary/Keyword: Multi-stack (MS)

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Multi-stack Technique for a Compact and Wideband EBG Structure in High-Speed Multilayer Printed Circuit Boards

  • Kim, Myunghoi
    • ETRI Journal
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    • v.38 no.5
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    • pp.903-910
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    • 2016
  • We propose a novel multi-stack (MS) technique for a compact and wideband electromagnetic bandgap (EBG) structure in high-speed multilayer printed circuit boards. The proposed MS technique efficiently converts planar EBG arrays into a vertical structure, thus substantially miniaturizing the EBG area and reducing the distance between the noise source and the victim. A dispersion method is presented to examine the effects of the MS technique on the stopband characteristics. Enhanced features of the proposed MS-EBG structure were experimentally verified using test vehicles. It was experimentally demonstrated that the proposed MS-EBG structure efficiently suppresses the power/ground noise over a wideband frequency range with a shorter port-to-port spacing than the unit-cell length, thus overcoming a limitation of previous EBG structures.

Implementation of Ethernet-Based High-Speed Data Communication for Multi-core DSP (멀티 코어 DSP를 위한 이더넷 기반 고속 데이터 통신 구현)

  • Nguyen, Dung Huy;Choi, Joon-Young
    • IEMEK Journal of Embedded Systems and Applications
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    • v.17 no.3
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    • pp.185-190
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    • 2022
  • We propose a high speed data communication method for motor drive systems with fast control cycle in order to collect state variables of motor control without degrading control performance. Ethernet is chosen for communication device, and multi-core DSP architecture is exploited for communication processing load distribution. The communication program including network protocol stack and motor control program are assigned to two separate cores, and data between two cores are exchanged using interrupt-based inter-process communication mechanism, which enables to achieve a high-speed communication performance without degrading the motor control performance. The performance of developed communication method is demonstrated by real experiments using TCP, UDP and Raw Socket protocols in an experimental setup consisting of TI's TMS320F28388D motor control card and MS Windows PC.

Prestack Depth Migration for Gas Hydrate Seismic Data of the East Sea (동해 가스 하이드레이트 탄성파자료의 중합전 심도 구조보정)

  • Jang, Seong-Hyung;Suh, Sang-Yong;Go, Gin-Seok
    • Economic and Environmental Geology
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    • v.39 no.6 s.181
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    • pp.711-717
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    • 2006
  • In order to study gas hydrate, potential future energy resources, Korea Institute of Geoscience and Mineral Resources has conducted seismic reflection survey in the East Sea since 1997. one of evidence for presence of gas hydrate in seismic reflection data is a bottom simulating reflector (BSR). The BSR occurs at the interface between overlaying higher velocity, hydrate-bearing sediment and underlying lower velocity, free gas-bearing sediment. That is often characterized by large reflection coefficient and reflection polarity reverse to that of seafloor reflection. In order to apply depth migration to seismic reflection data. we need high performance computers and a parallelizing technique because of huge data volume and computation. Phase shift plus interpolation (PSPI) is a useful method for migration due to less computing time and computational efficiency. PSPI is intrinsically parallelizing characteristic in the frequency domain. We conducted conventional data processing for the gas hydrate data of the Ease Sea and then applied prestack depth migration using message-passing-interface PSPI (MPI_PSPI) that was parallelized by MPI local-area-multi-computer (MPI_LAM). Velocity model was made using the stack velocities after we had picked horizons on the stack image with in-house processing tool, Geobit. We could find the BSRs on the migrated stack section were about at SP 3555-4162 and two way travel time around 2,950 ms in time domain. In depth domain such BSRs appear at 6-17 km distance and 2.1 km depth from the seafloor. Since energy concentrated subsurface was well imaged we have to choose acquisition parameters suited for transmitting seismic energy to target area.

Investigating InSnZnO as an Active Layer for Non-volatile Memory Devices and Increasing Memory Window by Utilizing Silicon-rich SiOx for Charge Storage Layer

  • Park, Heejun;Nguyen, Cam Phu Thi;Raja, Jayapal;Jang, Kyungsoo;Jung, Junhee;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.324-326
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    • 2016
  • In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

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Design and Operation Characteristics of 2.4MJ Pulse Power System for Electrothermal-Chemical(ETC) Propulsion(I) (전열화학추진용 2.4MJ 펄스파워전원의 설계와 동작특성(I))

  • Jin, Y.S.;Lee, H.S.;Kim, J.S.;Cho, J.H.;Lim, G.H.;Kim, J.S.;Chu, J.H.;Jung, J.W.;Hwang, D.W.
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1868-1870
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    • 2000
  • As a drive for an ETC (Electro-thermal Chemical) launcher, a large pulse power system of a 2.4MJ energy storage was designed, constructed and tested. The overall power system consists of eight capacitive 300kJ energy storage banks. In this paper we describe the design features, setup and operation test result of the 300kJ pulsed power module. Each capacitor bank of the 300kJ module consists of six 22kV 50kJ capacitors. A triggered vacuum switch (TVS-43) was adopted as the main pulse switch. Crowbar diode circuits, variable multi-tap inductors and energy dumping systems are connected to each high power capacitor bank via bus-bars and coaxial cables. A parallel crowbar diode stack is fabricated in coaxial structure with two series 13.5kV, 60kA avalanche diodes. The main design parameters of the 300kJ module are a maximum current of 180kA and a pulse width of 0.5 - 3ms. The electrical performances of each component and current output variations into resistive loads have been investigated.

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