• Title/Summary/Keyword: Multi-quantum well infrared pho-todetector

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Surface Photovoltage of $Al_{0.3}$$Ga_{0.7}$As/GaAs Multi-Quantum Well Structures ($Al_{0.3}$$Ga_{0.7}$As/GaAs 다중 양자 우물 구조의 표면 광전압에 관한 연구)

  • 이정열;김기홍;손정식;배인호;김인수;박성배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.1
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    • pp.21-27
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    • 2000

  • We used the surface photovoltage spectroscopy(SPVS) for characterization of GaAs/Al\ulcornerGa\ulcornerAs multi-quantum well(MQW) structures grown by molecular beam epitaxy(MBE) method. Energy gap related transitions in GaAs and AlGaAs were observed. The Al composition(x=0.3) was determined by Sek's composition formula. Transition energies in MQW were determined using the differential surface photo-volatage spectroscopy)DSPVS) of the measured resonanced. In order to indentify the transitions, the experimentally observed energies were compared with results of the envelope function approximation for a rectangular quantum well. We have observed and interesting behavior of the temperature dependence(80K~300K) of the 11Hand 11L transition for sample.

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