• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.6
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• pp.3143-3165
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• 2017

We present a computerized framework for producing color pastel painting from the visual information extracted from a photograph. To express color pastel painting, we propose a multi-layered framework where each layer possesses pastel stroke patterns of different colors. The stroke patterns in the separate layers are merged by a rendering equation based on a participating media rendering scheme. To produce the stroke patterns in each layer, we review the physical properties of pastels and the mechanism of a convolution framework, which is the most widely used scheme to simulate stick-shaped media such as pencils. We devise the following computational models to extend the convolution framework to produce pastel strokes: a bold noise model, which mimics heavy and clustered deposition of pigment, and a thick convolution filter model, which produces various pastel stroke patterns. We also design a stochastic color coordination scheme to mimic pastel artists' color expression and to separate strokes in different layers. To demonstrate the soundness of approach, we conduct several experiments using the models and compare the results with existing works or real pastel paintings. We present the results for several pastel paintings to demonstrate the excellent performance of our framework.

• Applied Chemistry for Engineering
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• v.18 no.5
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• pp.506-510
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• 2007

Vacuum deposited 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA), a widely-used semiconductor material, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in OLEDs and a well-stacked 1-TNATA layer leads to stable and high efficiency devices by reducing the carrier injection barrier at the interface between the ITO anode and hole transport layers. According to Raman spectra, thermal annealing after deposition as well as electromagnetic field treatment during deposition lead to closer stacking of 1-TNATA molecules and resulted in molecular ordering. By thermal annealing at about $110^{\circ}C$, an increase in current flow through the film by over 25% was observed. Molecularly-ordered 1-TNATA films played an important role in achieving higher luminance efficiency as well as higher power efficiency of the multi-layered organic EL devices in the present work. Electromagnetic field treatment during deposition was less effective compared to thermal annealing

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.294-298
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• 2004

Carbon nanotubes(CNTs) were synthesized by thermal chemical vapor deposition(CVD) method. To fabricate CNT gas sensor, catalyst metal layer was deposited on microstructure. The CNT gas detecting layer was grown by thermal CVD method on the catalyst metal layer. In order to investigate the gas sensing characteristics of the fabricated CNT gas sensor, it was exposed in NO$_2$ gas and sensitivity, response, and recovery time were measured. As the result, this sensor has better reproductibility and faster recovery time than another CNT gas sensors.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.74-84
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• 2022

As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.475-480
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• 2017

In this paper, the conductivity of the fine pattern is improved in the insulating substrate by laser-induced forward transfer (LIFT) process. The high laser beam energy generated in conventional laser induced deposition processes induces problems such as low deposition density and oxidation of micro-patterns. These problems were improved by using a polymer coating layer for improved deposition accuracy and conductivity. Chromium and copper were used to deposit micro-patterns on silicon wafers. A multi-pulse laser beam was irradiated on a metal thin film to form a seed layer on an insulating substrate(SiO2) and electroless plating was applied on the seed layer to form a micro-pattern and structure. Irradiating the laser beam with multiple scanning method revealed that the energy of the laser beam improved the deposition density and the surface quality of the deposition layer and that the electric conductivity can be used as the microelectrode pattern. Measuring the resistivity after depositing the microelectrode by using the laser direct drawing method and electroless plating indicated that the resistivity of the microelectrode pattern was $6.4{\Omega}$, the resistance after plating was $2.6{\Omega}$, and the surface texture of the microelectrode pattern was uniformly deposited. Because the surface texture was uniform and densely deposited, the electrical conductivity was improved about three fold.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.179.1-179.1
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• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.125-125
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• 2011

티타늄 화합물은 뛰어난 물리적 특성과 인체 무해성을 가지고 있어 생체, 내식 및 내마모 재료 등에 널리 응용되고 있으며, 금(gold)색의 색상 구현을 통해 미적 기능성 향상을 위한 표면처리 분야에도 많은 관심을 받고 있다. 본 연구에서는 아크 방전법을 이용해 밀착력이 우수한 다층 TiN 박막을 제조하고 미세조직 변화에 따른 특성을 알아보고자 한다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.143-143
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• 2012

질화 티타늄(Titanium Nitride)은 뛰어난 물리적 특성이 있어 내마모 재료의 표면처리 분야에 많이 사용되고 있다. 본 연구에서는 음극 아크 방전을 이용하여 빗각 증착을 실시하고 증착 시 기판에 bias 인가 여부에 따라 주상정의 방향성이 변하는 단층 및 다층의 TiN 박막을 제조하였으며 동일한 두께의 다양한 다층구조에서 경도의 증가를 확인하였다.

• Current Applied Physics
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• v.18 no.11
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• pp.1436-1440
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• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1590-1592
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• 1999

We have fabricated good quality superconducting $YBa_2Cu_3O_{7-{\delta}}$ thin films on Hastelloy(Ni-Cr-Mo alloys) with $CeO_2$ buffer layers by in-situ pulsed laser deposition in a multi-target processing chamber. Using one of electrical properties of YBCO superconducting which the resistance approaches to zero dramatically on transition temperature, we have researched to make power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to make films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting layer and non-crystallization of YBCO on amorphous substrate. From early research, two ways-using textured metallic substrate and buffer layer-were proposed to overcome theses difficulties. We have chosen $CeO_2$ as a buffer layer which has cubic structure of $5.41{\AA}$ lattice parameter and only 0.2% of lattice mismatch with $3.82{\AA}$ of a-axis lattice parameter of YBCO on (110) direction of $CeO_2$. In order to enhance the crystallization of YBCO films on metallic substrates we deposited $CeO_2$ buffer layers at varying temperature $700^{\circ}C$ to $800^{\circ}C$ and $O_2$ pressure. By X-ray diffraction, we found that each domination of (200) and (111) orientations were strongly relied upon the deposition temperature in $CeO_2$ layer and the change of the domination of orientation affects the crystallization of YBCO upper layer.