• Korean Journal of Materials Research
• /
• v.20 no.11
• /
• pp.586-591
• /
• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• The Journal of Engineering Geology
• /
• v.14 no.3 s.40
• /
• pp.301-311
• /
• 2004

This study is suggested a new dielectric tracer test method to understand geological structure of porous media and groundwater flow to use the dielectric constant which is one of electrical special quality of various geological materials. To measure their parameters, tracer material is made an ethanol mixing liquid(EML) having a same specific gravity of water. Also, soil materials are prepared a dielectric tracer test using the FDR system that could measure dielectric constant for saturated standard sand and river sand layers which have different initial porosity. To compare with their results, we discussed with the concentration variation of saline water having a saline concentration $3\%$ which is general tracer material by using the electro multi-meter system in the laboratory or field test. In two tracer experiment results, EML tracer test could confirm definitely EML concentration variation from each saturated soil layer as standard and river sands. However, tracer test of saline water $3\%$ concentration could not confirm permeating movement of water by degree of salinity change because these are settled at lower part column in a whole column area continuously. These causes are that specific gravity of saline water is heavier than water. That is, it could know that deposition of saline water is composed of lower part of soil column continuously independently of the direction of water into saturated soil material.

• Korean Journal of Materials Research
• /
• v.1 no.1
• /
• pp.46-53
• /
• 1991

The stress of PSG (Phosphosilicate glass), USG (Undoped-silicate grass) and SiN films, which are mainly used as passivation layers in semiconductor memory devices, deposited by CVD methods has been studied as a function of film thickness and holding time in air. The stress of the PSG film or the USG film is increased in tensile state with increasing film thickness. On the other hand the stress level of the SiN film in compressive stress does not change as film thickness changes. The stress of PSG film shows the drastic change from the tensile stress to the compressive stress after the film is left 2 days in air. FTIR spectra indicated that the stress variation was due to the penetration of water molecule. It looks possible to recover the stress of about $2.5{\times}{10^9}dyne/cm^2$ by annealing treatment at $300^{\circ}C$ for 20min. The total stress of multi-layered films having the PSG film is determined mainly by the stress variation of PSG layer with holding time. The total stress of multi-layered film appears to have a functional relationship with the stress in the thickness of each film. The resistance against stress-migration of sputtered Al line increases with increasing the tensile stress for the PSG film or the USG film.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.7
• /
• pp.667-678
• /
• 2002

In this paper, a new radiating structure with a multi-layered two-dimensional metallic disk array was proposed for shaping the flat-topped element pattern. It is an infinite periodic planar array structure with metallic disks finitely stacked above the radiating circular waveguide apertures. The theoretical analysis was in detail performed using rigid full-wave analysis, and was based on modal representations for the fields in the partial regions of the array structure and for the currents on the metallic disks. The final system of linear algebraic equations was derived using the orthogonal property of vector wave functions, mode-matching method, boundary conditions and Galerkin's method, and also their unknown modal coefficients needed for calculation of the array characteristics were determined by Gauss elimination method. The application of the algorithm was demonstrated in an array design for shaping the flat-topped element patterns of $\pm$20$^{\circ}$ beam width in Ka-band. The optimal design parameters normalized by a wavelength for general applications are presented, which are obtained through optimization process on the basis of simulation and design experience. A Ka-band experimental breadboard with symmetric nineteen elements was fabricated to compare simulation results with experimental results. The metallic disks array structure stacked above the radiating circular waveguide apertures was realized using ion-beam deposition method on thin polymer films. It was shown that the calculated and measured element patterns of the breadboard were in very close agreement within the beam scanning range. The result analysis for side lobe and grating lobe was done, and also a blindness phenomenon was discussed, which may cause by multi-layered metallic disk structure at the broadside. Input VSWR of the breadboard was less than 1.14, and its gains measured at 29.0 GHz. 29.5 GHz and 30 GHz were 10.2 dB, 10.0 dB and 10.7 dB, respectively. The experimental and simulation results showed that the proposed multi-layered metallic disk array structure could shape the efficient flat-topped element pattern.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.05a
• /
• pp.8.1-8.1
• /
• 2011

Nanocrystalline titanium dioxide ($TiO_2$) materials have been widely used as an electron collector in DSSC. This is required to have an extremely high porosity and surface area such that the dye can be sufficiently adsorbed and be electronically interconnected, resulting in the generation of a high photocurrent within cells. In particular, their geometrical structures and crystalline phase have been extensively investigated as important issues in improving its photovoltaic efficiency. In this study, we present a new strategy to fabricate a photoelectrode having a periodic structured $TiO_2$ film templated from 1D or 3D polystyrene (PS) microspheres array. Monodisperse PS spheres of various radiuses were used for colloidal array on FTO glasses and two types of photoelectrode structures with different $TiO_2$ materials were investigated respectively. One is the igloo-shaped electrode prepared by $TiO_2$ deposition by RF-sputtering onto 2D microsphere-templated substrates. At the interface between the film and substrate, there are voids formed by the decomposition of PS microspheres during the calcination step. These holes might be expected to play the predominant roles as scattering spherical voids to promote a light harvesting effect, a spacious structure for electrolytes with higher viscosity and effective paths for electron transfer. Additionally the nanocrystalline $TiO_2$ phase prepared by the RF-sputtering method was previously reported to improve the electron drift mobility within $TiO_2$ electrodes. This yields solar cells with a cell efficiency of 2.45% or more at AM 1.5 illumination, which is a very remarkable result, considering its $TiO_2$ electrode thickness (<2 ${\mu}m$). This study can be expanded to obtain higher cell efficiency by higher dye loading through the increase of surface area or multi-layered stacking. The other is the inverse opal photonic crystal electrode prepared by titania particles infusion within 3D colloidal arrays. To obtain the enlargement of ordered area and high quality of crystallinity, the synthesis of titania particles coated with a organic thin layer were applied instead of sol-gel process using the $TiO_2$ precursors. They were dispersed so well in most solvents without aggregates and infused successfully within colloidal array structures. This ordered mesoporous structure provides the large surface area leading to the enough adsorption of dye molecules and have an light harvesting effect due to the photonic band gap properties (back-and-forth reflection effects within structures). A major advantage of this colloidal array template method is that the pore size and its distribution within $TiO_2$ photoelectrodes are determined by those of latex beads, which can be controlled easily. These materials may have promising potentials for future applications of membrane, sensor and so on as well as solar cells.

• Korean Journal of Materials Research
• /
• v.2 no.3
• /
• pp.228-238
• /
• 1992

An investigation on the step-coverage of PECVD and $O_3$ ThCVD oxides was undertaken to implement into the void-free inter metal dielectric planarization using multi-chamber system for the submicron double level metallization. At various initial aspect ratios the instantaneous aspect ratios were measured through modelling and experiment by depositing the oxides up to $0.9{\mu}m$ in thickness in order to monitor the onset of void formation. The modelling was found to be in a good agreement with the observed instantaneous aspect ratio of TEOS-based PECVD oxide whose re-entrant angle was less than $5^{\circ}$. It is demonstrated that either keeping the instantaneous aspect ratio of PECVD oxide as a first layer less than a factor of 0.8 or employing Ar sputter etch to create sloped oxide edge ensures the void-free planarization after$O_3$ ThCVD oxide deposition whose step-coverage is superior to PECVD oxide. It has been observed that $O_3$ ThCVD oxide etchback scheme has shown higher yield of via contact chain than non etchback process, with resistance per via contact of $0.1~0.3{\Omega}/{\mu}m^2$.

• Journal of the Korean Vacuum Society
• /
• v.22 no.4
• /
• pp.188-192
• /
• 2013

Many studies have been conducted for preventing from diffusion between silicon wafer and metallic thin film due to a decrease of line-width and multi-layer thin film for miniaturization and high integration of semiconductor. This paper has focused on the nano-mechanical property of diffusion barrier which sample is prepared for various gas flow rate of nitrogen with tungsten (W) base from 2.5 to 10 sccm. The deposition rate, resistivity and crystallographic properties were measured by a ${\beta}$-ray back-scattering spectroscopy, 4-point probe and x-ray diffraction (XRD), respectively. We also has investigated the nano-mechanical property using the nano-indenter. As a result, the surface hardness of W-N thin film was increased rapidly from 10.07 to 15.55 GPa when the nitrogen gas flow was increased from 2.5 to 5 sccm. And the surface hardness of W-N thin film had 12.65 and 12.77 GPa at the nitrogen gas flow of 7.5 and 10 sccm respectively. These results were decreased by the comparison with the W-N thin film at nitrogen gas flow of 5 sccm. It was inferred that these severe changes were caused by the stoichiometric difference between the crystalline and amorphous state in W-N thin film. In addition, these results were caused by increased compressive stress.

• Restorative Dentistry and Endodontics
• /
• v.33 no.1
• /
• pp.9-19
• /
• 2008

The purpose of this study was: (1) to compare nanoleakage patterns of a conventional 3-step etch and rinse adhesive system and two experimental hydrophobic adhesive systems and (2) to investigate the change of the nanoleakage patterns after load cycling. Two kinds of hydrophobic experimental adhesives, ethanol containing adhesive (EA) and methanol containing adhesive (MA), were prepared. Thirty extracted human molars were embedded in resin blocks and occlusal thirds of the crowns were removed. The polished dentin surfaces were etched with a 35 % phosphoric acid etching gel and rinsed with water. Scotchbond Multi-Purpose (MP), EA and MA were used for bonding procedure. Z-250 composite resin was built-up on the adhesive-treated surfaces. Five teeth of each dentin adhesive group were subjected to mechanical load cycling. The teeth were sectioned into 2 mm thick slabs and then stained with 50 % ammoniacal silver nitrate. Ten specimens for each group were examined under scanning electron microscope in backscattering electron mode. All photographs were analyzed using image analysis software. Three regions of each specimen were used for evaluation of the silver uptake within the hybrid layer. The area of silver deposition was calculated and expressed in gray value. Data were statistically analyzed by two-way ANOVA and post-hoc testing of multiple comparisons was done with the Scheffe's test. Silver particles were observed in all the groups. However, silver particles were more sparsely distributed in the EA group and the MA group than in the MP group (p < .0001). There were no changes in nanoleakage patterns after load cycling.