• Title/Summary/Keyword: Multi-Si

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Mechanical Properties of Porous Reaction Bonded Silicon Carbide (반응소결 탄화규소 다공체의 기계적 특성)

  • Hwang, Sung-Sic;Park, Sang-Whan;Han, Jae-Ho;Han, Kyung-Sop;Kim, Chan-Mook
    • Journal of the Korean Ceramic Society
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    • v.39 no.10
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    • pp.948-954
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    • 2002
  • Porous reaction bonded SiC with high fracture strength was developed using Si melt infiltration method for use of the support layer in high temperature gas filter that is essential to develop the next generation power system such as integrated gasification combined cycle system. The porosity and pore size of porous RBSC developed in this study were in the range of 32∼36% and 37∼90 ${\mu}m$ respectively and the maximum fracture strength of porous RBSC fabricated was 120 MPa. The fracture strength and thermal shock resistance of porous RBSC fabricated by Si melt infiltration were much improved compared to those of commercially available porous clay bonded SiC due to the formation of the strong SiC/Si interface between SiC particles. The characteristics of pore structure of porous RBSC was varied depending on the amounts of residual Si as Well as the size of SiC particle used in green body.

A Study on the Thermal Stability in Multi-Aluminum Thin Films during Isothermal Annealing (등온 열처리시 알루미늄 다층 박막의 열적 안정성에 관한 연구)

  • 전진호;박정일;박광자;김홍대;김진영
    • Journal of the Korean institute of surface engineering
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    • v.24 no.4
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    • pp.196-205
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    • 1991
  • Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

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Enhanced Anti-reflective Effect of SiNx/SiOx/InSnO Multi-layers using Plasma Enhanced Chemical Vapor Deposition System with Hybrid Plasma Source

  • Choi, Min-Jun;Kwon, O Dae;Choi, Sang Dae;Baek, Ju-Yeoul;An, Kyoung-Joon;Chung, Kwun-Bum
    • Applied Science and Convergence Technology
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    • v.25 no.4
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    • pp.73-76
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    • 2016
  • Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

FEM Residual Stress Analysis and Mechanical Properties of Silicon Nitride/Stainless Steel Joint with Multi-Interlayer (다층중간재를 사용한 질화규소/스테인레스 강 접합체의 잔류응력 해석 및 기계적 특성)

  • 박상환;김태우;최영화
    • Journal of the Korean Ceramic Society
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    • v.33 no.2
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    • pp.127-134
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    • 1996
  • The thermal residual stresses were estimated for brazed Si3N4/S.S.316 joints with Cu/Mo multi-interlayers using FEM, and their bending strengths at room temperature were measured for various interlayer configura-tions. The Cu, Mo multi-interlayer decreased the maximum residual stress in Si3N4 and caused the residual stress redistribution rsulting in the high residual stress at Mo interlayer. The stress distribution in the joints as well as the maximum residual stress in silicon nitride were found to be main factors for determining bending strengths and Weibull modulous of the joints. The bending strength of the brazed Si3N4/S.S.316 joints with specific Cu, Mo multi-interlayer system were found to be above 400 MPa.

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Effect of Si3N4 Buffer Layer on Transmittance of TiO2/Si3N4/Ag/Si3N4/TiO2 Multi Layered Structure (TiO2/Si3N4/Ag/Si3N4/TiO2 다층구조에서 Si3N4 버퍼층이 투과율에 미치는 영향)

  • Lee, Seo-Hee;Jang, Gun-Eik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.1
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    • pp.44-47
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    • 2012
  • The $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in $TiO_2/Ag/TiO_2$ became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between $TiO_2$ and Ag. in order to prevent the oxidation of Ag layer in $TiO_2/Si_3N_4/Ag/Si_3N_4/TiO_2$ structure. It was confirmed that $Si_3N_4$ layer is one of candidate materials acting as diffusin barrier between $TiO_2/Ag/TiO_2$.

Electrodeposition and characterization of Ni-W-Si3N4 alloy composite coatings

  • Choi, Jinhyuk;Gyawali, Gobinda;Lee, Soo Wohn
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.05a
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    • pp.171-172
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    • 2015
  • $Ni-W-Si_3N_4$ alloy composite coatings were prepared by pulse electro-deposition method using nickel sulfate bath with different contents of tungsten source, $Na_2WO_4.2H_2O$, and dispersed $Si_3N_4$ nano-particles. The structure and micro-structure of coatings was separately analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM). Results indicated that nano $Si_3N_4$ and W content in alloy had remarkable effect on micro-structure, micro-hardness and scratch resistant properties. Tungsten content in Ni-W and $Ni-W-Si_3N_4$ alloy ranged from 7 to 14 at.%. Scratch test results suggest that as compared to Ni-W only, $Ni-W-Si_3N_4$ prepared from Ni/W molar ratio of 1:1.5 dispersed with 20 g/L $Si_3N_4$ has shown the best result among different samples.

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Development of a multi-modal imaging system for single-gamma and fluorescence fusion images

  • Young Been Han;Seong Jong Hong;Ho-Young Lee;Seong Hyun Song
    • Nuclear Engineering and Technology
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    • v.55 no.10
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    • pp.3844-3853
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    • 2023
  • Although radiation and chemotherapy methods for cancer therapy have advanced significantly, surgical resection is still recommended for most cancers. Therefore, intraoperative imaging studies have emerged as a surgical tool for identifying tumor margins. Intraoperative imaging has been examined using conventional imaging devices, such as optical near-infrared probes, gamma probes, and ultrasound devices. However, each modality has its limitations, such as depth penetration and spatial resolution. To overcome these limitations, hybrid imaging modalities and tracer studies are being developed. In a previous study, a multi-modal laparoscope with silicon photo-multiplier (SiPM)-based gamma detection acquired a 1 s interval gamma image. However, improvements in the near-infrared fluorophore (NIRF) signal intensity and gamma image central defects are needed to further evaluate the usefulness of multi-modal systems. In this study, an attempt was made to change the NIRF image acquisition method and the SiPM-based gamma detector to improve the source detection ability and reduce the image acquisition time. The performance of the multi-modal system using a complementary metal oxide semiconductor and modified SiPM gamma detector was evaluated in a phantom test. In future studies, a multi-modal system will be further optimized for pilot preclinical studies.

Design and Implementation of System in Package for a HF/UHF Multi-band RFID Reader (HF/UHF 멀티밴드 RFID 리더의 SiP 설계 및 구현)

  • An, Kwang-Dek;Yi, Kyeong-Il;Kim, Ji-Gon;Cho, Jung-Hyun;Kim, Shi-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.10
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    • pp.59-65
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    • 2008
  • We have proposed a UHF/HF multi-band RFID reader, and have implemented it into a system in a package(SiP). The proposed SiP RFID reader has been designed to support both for EPCgloabal Class1 Generation2 protocol of UHF band, and 13.56MHz RFID protocols of ISO14443 A/B type, and ISO15693 standards. The operating mode is controlled by embedded RISC core, and the mode can be selected by users. The area of implemented SiP is $40mm{\times}40mm$ with 4 metal layers. The implemented reader SiP operates at single supply voltage of 3.3V. The maximum current consumption is 210mA. The operating distances are 5cm for 13.56MHz modes, and 20cm for UHF mode.

Numerical Study on Optical Characteristics of Multi-Layer Thin Film Structures Considering Wave Interference Effects (파동간섭효과를 고려한 다층 박막 구조의 광학특성에 대한 수치해석 연구)

  • Shim, Hyung-Sub;Lee, Seong-Hyuk
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.5
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    • pp.272-277
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    • 2006
  • The present study is devoted to investigate numerically the optical characteristics of multi-layer thin film structures such as $Si/SiO_2\;and\;Ge/Si/SiO_2$ by using the characteristics transmission matrix method. The reflectivity and the absorptivity rate for thin film structures are estimated for different incident angles of rays and various film thicknesses. In addition, the influence of wavelength on optical characteristics related to complex refractive index is examined. It is found that such wave-like characteristics are observed in predicting reflectivities and depends mainly on film thickness. Moreover, the present study predicts the film thickness for ignoring wave interference effects, and it also discusses the fundamental physics behind optical and energy absorption characteristics appearing in multi-layer thin film structures.