• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.127.1-127.1
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.43-46
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• 2002

Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.139.2-139.2
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• 2007

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.474-477
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• 2018

$Ca_3MgSi_2O_8:Eu^{2+}$(x = 0.003, 0.005, 0.007, 0.01, 0.03 mol) white phosphors for Light Emitting Diodes(LED) are synthesized with different concentrations of $Eu^{2+}$ ions using a solid state reaction method. The crystal structures, surface and optical properties of the phosphors are investigated using X-Ray Diffraction(XRD), Scanning Electron Microscope(SEM) and photoluminescence(PL). The X-Ray Diffraction results reveals that the crystal structure of the $Ca_3MgSi_2O_8:Eu^{2+}$ is a monoclinic system. The particle size of $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors is about $1{\sim}5{\mu}m$, as confirmed by SEM images. The maximum emission spectra of the phosphors are observed at 0.01 mol $Eu^{2+}$ concentration. The decrease in PL intensity in the $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors with $Eu^{2+}$ concentration is interpreted by concentration quenching. The International Commission on Illumination(CIE) coordinate of 0.01 mol Eu doped $Ca_3MgSi_2O_8$ is X = 0.2136, Y = 0.3771.

• Ceramist
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• v.10 no.3
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• pp.28-33
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• 2007

The structural and optical properties of Ni-doped transparent glass-ceramics are reviewed. The quantum efficiencies of ceramics were examined to explore suitable crystalline phase for Ni-doping in glass-ceramics. Inverse spinel $LiGa_5O_8$ have the quantum efficiency of almost 100 % at room temperature. Transparent glass ceramics containing $LiGa_5O_8$ was successfully synthesized by heat treatment of $Li_2O-Ga_2-O_3-SiO_2-NiO$ glass. Most of $Ni^{2+}$ ions in glass-ceramic were incorporated into $LiGa_5O_8$ nanocrystals. The near-infrared emission covering from the O-band to L-band (1260-1625 nm) was observed from the Ni-doped $Li_2O-Ga_2O_3-SiO_2$ glass-ceramic though it was not observed from the as-cast glass. The lifetime of the emission was about $580\;{\mu}sec$ even at 300K. The emission quantum efficiency was evaluated as about 10 % that is enough high for practical usage as gain media of optical fiber amplifiers. The figure of merit (the product of the stimulated emission cross section and lifetime) was as high as that of rare-earth-doped glasses. The broad bandwidth, high quantum efficiency and high figure of merit show that transparent glass-ceramics containing $Ni^{2+}:LiGa_5O_8$ nanocrystals are promising candidates as novel ultra-broadband gain media.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.78-79
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• 2009

본 연구에서는 ZnO계 투명전극 소재를 이용하여 RFID 태그 안테나에 적용 가능성 여부를 확인하였다. Si 기판위에 RF 스퍼터링 공정에 의해 Ga-doped ZnO 투명 마이크로스트립 스파이혈 안테나를 $2{\mu}m$를 증착하여 구현하고 그 전기적 특성을 측정하였다. HFSS 전자계 시뮬레이터를 사용하여 13.56MHz HF 주파수 대역에서 태그 안테나로서의 가능성을 검증한 후 Ga-doped ZnO 타겟을 사용한 RF 스퍼터링 공정에 의하여 스파이럴 안테나 패턴을 구현하였다. 마이크로스트립 선폭 및 선 간격을 $50\sim200{\mu}m$때 영역에서 조절하면서 안테나 패턴을 설계하였다. S 파라메터, 자기공진주파수 및 Q값을 시뮬레이션으로부터 도출하였다. Al $2{\mu}m$ 증착한 시편에 비하여 약 -10dB 정도의 이득저하가 발생하였으나 리더-태그를 밀착시킨 조건에서 1.7V (13.56MHz) 전압검출이 가능하였다.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.659-667
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• 1997

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.604-607
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• 1997

SiO$_{2}$를 첨가한 Cr$_{2}$O$_{3}$의 전기전도도와 미세구조를 산소분압, 온도, 그리고 SiO$_{2}$첨가량에 따라 측정하였다. 입자직경은 1$\mu\textrm{m}$보다 작다. 순수한 Cr$_{2}$O$_{3}$의 전기전도도는 산소분압과 온도가 증가함에 따라 증가하였으며 110$0^{\circ}C$부터 진성 영역이 나타났다. Cr$_{2}$O$_{3}$의 전기전도도는 SiO$_{2}$첨가로 감소하지만, 산소분압에 따른 변화는 SiO$_{2}$첨가와 무관하다.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.159-166
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• 1999

The physical properties and microstructural changes with heat-treatment of opacified silica aerogels doped by TiO2 were investigated. Monolithic SiO2-TiO2 aerogels were prepared by supercritical drying (25$0^{\circ}C$, 1250 psig) of wet gel obtained by adding titanium isopropoxide to prehydrolyzed TEOS-isopropanol solutions. The density and the porosity of SiO2-10 mol% TiO2 aerogels were 0.23 g/㎤ and 90%, respectively. During supercritical drying, the linear shrinkage of aerogels increased with increase in the titanium content an TiO2 was transformed to the anatase phase as well as particls agglomerates led to TiO2 clusters of 100~800 nm dispersed homogeneoulsy in the silica matrix. The IR transmittance of opacified silica aerogels was very low in the region of wavelengths below 8 ${\mu}{\textrm}{m}$ compared with pure silica aerogels and SiO2-TiO2 aerogels showed the high thermal stability of microstructures up to $600^{\circ}C$.