• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.891-896
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• 2003

Novel fabrication technique was developed for high strength Reaction-Bonded SiC (RBSC) hot gas filter for use in IGCC (Integrated Gasification Combined Cycle) system. The room and high temperature fracture strengths for Si-melt infiltrated reaction-bonded SiC were 50-123, and 60-66 MPa, respectively. The average pore size was 60-70 $\mu\textrm{m}$ and the porosity was about 34 vol％. RBSC infiltrated with molten silicon showed improved fracture strength at high temperature, as compared to that of clay-bonded SiC, due to SiC/Si phase present within SiC phase. The thickness for SiC/Si phase was increased with increasing powder particle size of SiC from 10 to 34 $\mu\textrm{m}$. Pressure drop with dust particles showed similar response as compared to that for Schumacher type 20 filter. The filter fabricated in the present study showed good performance in that the filtered powder size was reduced drastically to below 1 $\mu\textrm{m}$ within 4 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.235-242
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• 2004

Si, NH$_4$Cl, NaN$_3$, NaCl, $N_2$ were used as raw materials for preparation of $\alpha$-Si$_3$N$_4$ powder. NH$_4$Cl and NaN$_3$ were used as additives, and NaCl was used as a diluent. Initial $N_2$ gas pressure in the SHS reactor was 60 atm. In preparation of $\alpha$-Si$_3$N$_4$, the reactivity and the properties of the products were examined with the various kinds of additives and the content of diluent. At first, the optimum reaction system for the preparation of $\alpha$-Si$_3$N$_4$ is examined and then the optimum composition was examined in the optimum reaction system. The optimum reaction system was Si-$N_2$-additive(NH$_4$Cl+NaN$_3$)-diluent(NaCl) and the optimum composition was 38 wt%Si+50 wt%(NH$_4$Cl+NaN$_3$)+12 wt%NaCl. The maximum fraction of $\alpha$-phase of Si$_3$N$_4$ produced in this condition was 96.5 wt% and the shape of the $\alpha$-Si$_3$N$_4$ produced in this condition was an irregular fiber with a length of 10 ${\mu}{\textrm}{m}$ and a diameter of 1 ${\mu}{\textrm}{m}$.