• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.122-123
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• 1998

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.63-64
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• 2007

• Journal of the Korean Society for Precision Engineering
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• v.20 no.10
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• pp.12-21
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• 2003

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.27-27
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• 1996

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.22-22
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• 1996

• Proceedings of the Korean Fiber Society Conference
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• 1994.04a
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• pp.28-28
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• 1994

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.415-416
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• 2008

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.739-746
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• 2005

When we design a binary phase holographic optical low-pass filter (HOLF), the phase difference is generally set to be $\pi$ to optimize the diffraction efficiency. However, the phase difference of real HOLF mostly deviate from $\pi$ by the error in the fabrication process. The deviation causes the (0,0)-th order diffracted beam to increase, which results In raising the diffraction efficiency. To study the effects of the phase error on the performance of HOLF, we calculated the MTF of HOLF for various phase differences. The results show that the phase error of 10 $\%$ makes little change in the filtering characteristics of HOLF. Considering the filtering by lens and CCD, the effects of the phase error becomes much smaller. To confirm it experimentally, we fabricated HOLFs for various phase differences. After installing it in a digital camera, we take picture of test targets and observe the Moire fringes and the resolution. The results agree with our prediction.

• Applied Microscopy
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• v.25 no.2
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• pp.65-72
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• 1995

The interfacial structures of ZnSe/GaAs which were grown by single chamber MBE at $300^{\circ}C$ were investigated by high resolution transmission electron microscope working at 300 kV with resolution of 0.18 nm. The interfaces of ZnSe/GaAs whose thickness is 2,700 nm are wavy and extensive stacking faults were formed in ZnSe epilayer but the interfaces maintained the coherency with the substrate GaAs. The stacking faults are formed in {111} planes and their sizes are $10{\sim}20nm$ in length and two or three atomic layer in width with the density of $10^9/cm^2$. Micortwins and moire fringes are also observed. However. in 10 nm ZnSe epilayer, the interfaces are pseudomorphic and only moire fringes are observed in local areas. The cylindrical defects which are perpendicular to the interface with $50{\sim}60nm$ in length, were observed with the interval of 50 nm at ZnSe/GaAs interfaces in 2,700nm epilayer. The origin and character of these defects are unknown, however, they played a role of producing the structural defects at the interfaces.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.6
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• pp.159-165
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• 2001

Recently Moire and PMP(Phase Measuring Profilometry) are adopted as a practical methodology for non-contact 3-D measurement of free surface. These methods extract the 3-D informations from the images of the object projected with stripe-pattern light. This paper presents a simple projector generating stripe-pattern light using expensive polygon mirror. In this projector, slit-beam is generated with a Laser diode and a rod lens and the laser diode is switched on/off synchronizing with the rotation of the polygon mirror. So its structure is very simple and light-weighted compared to the existent projection methods using several lenses and it is also easy to change the pitch and the phase of the stripe pattern. Experimental results show that the intensity profile of the stripe pattern can be approximated with sinusoidal curve by reducing the pitch of the stripe pattern.