• Progress in Superconductivity
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• v.5 no.1
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• pp.45-49
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• 2003

We have designed and fabricated the single-layer high $T_{c}$ SQUID magnetometer consisting of a directly coupled grain boundary junction SQUID with an inductance of 100 pH and 16 nested parallel pickup coils with the outermost dimension of 8.8 mm ${\times}$ 8.8 mm. The magnetometer was formed from a YBCO thin film deposited on an STO(100) bicrystal substrate with a misorientation angle of $30^{\circ}$. The SQUID magnetometer was further improved by optimizing the multi-loop pickup coil design for use in unshielded environments. Typical characteristics of the dc SQUID magnetometer had a modulation voltage of 40 $\mu\textrm{V}$ and a white noise of $30fT/Hz^{1}$2/. The SQUID magnetometer exhibited a 1/f noise level at 10 Hz reduced by a factor of about 3 compared with that of the conventional solid type pickup coil magnetometers and a very stable flux locked loop operation in magnetically disturbed environments.s.

• The Korean Journal of Physiology and Pharmacology
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• v.4 no.4
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• pp.291-299
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• 2000

Morphine or butorphanol was continuously infused into cerebroventricle (i.c.v.) with the rate of $26\;nmol/{\mu}l/h$ for 3 days, and the withdrawal from opioid was rendered 7 hrs after the stopping of infusion. The expression of physical dependence produced by these opioids was evaluated by measuring the naloxone-precipitated withdrawal signs. The withdrawal signs produced in animals dependent on butorphanol (kappa opioid receptor agonist) were similar to those of morphine (mu opioid receptor agonist). Besides the behavioral modifications, opioid withdrawal affected G protein expression in the central nervous system. The G-protein ${\alpha}-subunit$ has been implicated in opioid tolerance and withdrawal. The effects of continuous infusion of morphine or butorphanol on the modulation of G protein ${\alpha}-subunit$ mRNA were investigated by using in situ hybridization study. In situ hybridization showed that the levels of $G\;{\alpha}s$ and $G\;{\alpha}i$ were changed during opioid withdrawal. Specifically, the level of $G\;{\alpha}s$ mRNA was decreased in the cortex and cerebellar granule layer during the morphine and butorphanol withdrawal. The level of $G\;{\alpha}i$ mRNA was decreased in the dentate gyrus and cerebellar granule layer during the morphine withdrawal. However, the level of $G\;{\alpha}i$ mRNA was significantly elevated during the butorphanol withdrawal. These results suggest that region-specific changes of G protein ${\alpha}-subunit$ mRNA were involved in the withdrawal from morphine and butorphanol.

• International Journal of Contents
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• v.2 no.2
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• pp.10-16
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• 2006

In this paper, we propose a predictive resource metric region (RMR) based radio resource metric estimation (RRME) mechanism, which utilizes a resource metric mapping function (RMMF), both of which permit efficient inter-working between the physical layer and higher layers for envisaging multimedia service applications over a CDMA communication system platform. The RMR can provide the acceptable resource region where QoS and acceptable link quality can be guaranteed with an achievable resource margin to be utilized in terms of capacity margin, the degree of confidence (DCL) of user, second-order statistics of Eb/Io. With predicted capacity margin and variance, DCL can deliver decision parameters with which an adaptive QoS based admission control can perform well taking capacity and resource availability into account in a dynamic and predictive manner. Combined with advanced techniques such as adaptive modulation or rate control and power control, the proposed mechanism can adjust the conventional stringent link quality information efficiently, and deliver accurate information of the resource availability. Thus, these can guarantee the maximization of resource utilization of multimedia service applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.139-142
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• 2007

Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a $SiO_2$ as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.

• Proceedings of the KSME Conference
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• 2001.11b
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• pp.481-486
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• 2001

The hydrodynamic instability of the three-dimensional boundary layer on a rotating disk introduces a periodic modulation of the mean flow in the form of stationary cross flow vortices. Detailed numerical values of the growth rates, neutral curves and other characteristics have been calculated for the Type II-instabilities. Presented are the neutral stability results concerning the two instability modes by solving new linear stability equations reformulated not only by considering whole convective terms but by correcting some errors in the previous stability equations. The present stability results are agree with the previously known ones within reasonable limit. The spatial amplification contours have been calculated for the moving disturbance wave, whose azimuth angle is between $\varepsilon=-10^{\circ}$ and $-20^{\circ}$. The transition flow of the moving disturbance wave will be developed at $\varepsilon=-15^{\circ}$ and Re=352 corresponding at the growth rates n = 5.8 from the spatial amplification contours.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.189-192
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• 2000

We fabricated rapid single-flux-quantum RS flip-flop circuits with and without Y$_1$Ba$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) ground plane. The circuit consists of SNS-type ramp-edge Josephson junctions that have cobalt-doped YBCO and Sr$_2$AITaO$_6$(SAT) for barrier layer and insulator layer, respectively. The fabricated Josephson junction showed a typical RSJ-like current-voltage(I-V) characteristics above 50K. We sucessfuly demonstrated RS flip-flop at temperatures around 50K. The RS flip-flop fabricated on ground plane showed more definite set and reset state in voltage-flux(V-${\phi}$) modulation curve for read SQUID, which may be attributed to a shielding effect of the YBCO ground plane.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.534-540
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• 1990

In this paper the characteristics of submicron gate GaAs MESFET's have been studied using a particle model which takes into account the hot-electron transport phenomena, i.e., the velocity overshoot. \ulcornervalley(<000> direction), L valley (<111>direction), X valley (<100>direction) as the GaAs conduction energy band and optical phonon, acoustic phonon, equivalent intervalley, nonequivalent intervalley scattering as the scattering models, have been considered in this simulation. And the GaAs material and the device simulation have been done by determination of the free flight time, scattering mechanism and scattering angle according to Monte-Carlo algorithm which makes use of a particle model. As a result of the particle simulation, firstly the electron distribution, the potential energy distribution and the situation of electron displacement in 0.6 \ulcorner gate length device have been obtained. Secondly, the cutoff frequency, obtained by this method, is k47GHz which is in good agreement with the calculated result of theory. And the current-voltage characteristics curve which takes account of the buffer layer effect has been obtained. Lastly it has been verified that parasitic current at the buffer layer can be analyzed using channel depth modulation.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.3
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• pp.163-171
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• 2003

To evaluate the performance of the digital radiography(DR) system developed in our group, the modulation transfer function(MTF) was measured and compared with that of an analog X- ray detector, film/screen system. The DR system has an amorphous selenium(a-Se) layer vacuum-evaporated on a TFT flat panel detector. The speed class 400 film/screen (Fuji) system has been being used in the clinical field as analog X-ray detectors. Both the square wave and slit method were used to evaluate their MTF. The square method was applied to both film/screen and the DR system. The slit method, however, was applied to only DR system. The full-width half maximum resolution of film/screen was 357${\mu}{\textrm}{m}$(1.4 lp/mm at 50% spatial frequency), and the resolution of DR was limited to 200${\mu}{\textrm}{m}$(2.5 lp/mm at 30%). These results indicate the measured resolution limitations approximate to the pixel pitch, 139 ${\mu}{\textrm}{m}$ of TFT. The MTF of DR is higher than that of film/screen by the factor of 1.785. It is proved that our a-Se based DR system has potential usefulness in the clinical field.

• Journal of the Korean Magnetics Society
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• v.2 no.3
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• pp.251-256
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• 1992

Artificial superlattices of Co/Pd were prepared by RF magnetron sputtering Multilayered structure and compositional modulation were analyzed with a side angle x-ray diffractometer. It has been found that expansion of Co lattice occured in this artificial superlattice due to the lattice mismatch between Co and Pd. Perpendicular magnetic anisotropy could be observed when the Co layer thickness became less than 8${\AA}$ and maximum coercivity of 2350 Oe could be obtained in [Co(2.5 ${\AA}$)/Pd(9.3 ${\AA})]_{50}$/Pd$(200\;{\AA})$ with a perfect squareness of magnetic hysteresis loop. Characteristic of perpendicular magnetic anisotropy in Co/Pd superlattices could be related to the expansion of Co lattice caused by Pd layer and it turned out that as the thickness of Pd layer increased, perpendicular magnetic anisotropy increased. The interface anisotropy energy and volume anisotropy energy were calculated to be 0.29 ergs/$cm^2$ and -$6.9{\times}10^6$ ergs/$cm^3$ respectively, which are consistent with the values reported elsewhere.