• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.139-145
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• 2014

Control of threshold voltage ($V_T$) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For $V_T$-modulation larger than 100 mV, heavy ground doping over $1{\times}10^{20}cm^{-3}$ or back biasing scheme is preferred in case of TFETs. Polarity dependence is explained with a mechanism similar to the punch-through of MOSFETs. In spite of some minor differences, this result shows that both MOSFETs and TFETs can share common $V_T$-control scheme when these devices are co-integrated.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• Journal of the Semiconductor & Display Technology
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• v.10 no.1
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• pp.63-73
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• 2011

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with conventional pseudomorphic HEMTs (PHEMTs). For the optimized device design and development, we have performed the calibration on the DC characteristics of our fabricated 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure on the GaAs wafer using the hydrodynamic transport model of a commercial 2D ISE-DESSIS device simulator. The well-calibrated device simulation shows very good agreement with the DC characteristic of the 0.1 ${\mu}m$ ${\Gamma}$-gate MHEMT device. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.

• Applied Science and Convergence Technology
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• v.26 no.3
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• pp.43-46
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• 2017

Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide ($H_2O_2$) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.53-58
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• 1998

A buried channel poly-Si TFT (BCTFT) for application of high performance integrated circuits has been proposed and fabricated. BCTFT has unique features, such as the moderately-doped buried channel and counter-doped body region for conductivity modulation, and the fourth terminal entitled back bias for preventing kink effect. The n-type and p-type BCTFT exhibits superior performance to conventional poly-Si TFT in ON-current and field effect mobility due to moderate doping at the buried channel. The OFF-state leakage current is not increased because the carrier drift is suppressed by the p-n junction depletion between the moderately-doped buried channel and the counter-doped body region.

• Applied Science and Convergence Technology
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• v.23 no.1
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• pp.1-13
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• 2014

Semiconductor quantum structures are often characterized by their energy gaps which are modified by the quantum size effect. Energy levels in semiconductors can be realized by optical transitions within confined structures. Photoluminescence spectroscopy in magnetic fields at low temperatures has proved to be a powerful technique for investigating the electronic states of quantum semiconductor heterostructures and offers a complimentary tool to electrical transport studies. In this review, we examine comprehensive investigations of magneto-excitonic and Landau transitions in a large variety of undoped and doped quantum-well structures. Strong magnetic fields change the diamagnetic energy shift of free excitons from quadratic to linear in B in undoped single quantum well samples. Two-dimensional electron gas induced by modulation doping shows pronounce quantum oscillations in integer quantum Hall regime and discontinuous transition at ${\nu}=1$. Such discontinuous transition can be explained as the formation of spin waves or Skyrmions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.114-118
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• 2006

We investigated the transient electroluminescence (EL) and modulation characteristics of red organic light-emitting diodes (OLEDs), which consist with 4-(dicyanomethylene)-2-i -propyl-6-(1,1,7,7-tetramethyljulolidyl-9-cnyl)-4H-pyran (DCJTI) and rubrene doped into tris(8-hydroxyquinoline)aluminum ($Alq_3$). The transient EL waveforms showed two components, the overshooting peak and constant component, indicating that the excess amount of accumulated charges simultaneously recombine at the onset moment. This overshooting effect reduced the rise time of transient EL and enhanced the optical output of OLEDs when the pulse voltage applied to the device. We demonstrated that the red OLEDs could be use for the high-speed switching application by driving at more than 100 MHz and transmitting the video signals utilized as the electro-optical conversion device

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.169-181
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• 2011

In this present paper, a comprehensive drain current model incorporating the effects of channel length modulation has been presented for multi-layered gate material engineered trapezoidal recessed channel (MLGME-TRC) MOSFET and the expression for linearity performance metrics, i.e. higher order transconductance coefficients: $g_{m1}$, $g_{m2}$, $g_{m3}$, and figure-of-merit (FOM) metrics; $V_{IP2}$, $V_{IP3}$, IIP3 and 1-dB compression point, has been obtained. It is shown that, the incorporation of multi-layered architecture on gate material engineered trapezoidal recessed channel (GME-TRC) MOSFET leads to improved linearity performance in comparison to its conventional counterparts trapezoidal recessed channel (TRC) and rectangular recessed channel (RRC) MOSFETs, proving its efficiency for low-noise applications and future ULSI production. The impact of various structural parameters such as variation of work function, substrate doping and source/drain junction depth ($X_j$) or negative junction depth (NJD) have been examined for GME-TRC MOSFET and compared its effectiveness with MLGME-TRC MOSFET. The results obtained from proposed model are verified with simulated and experimental results. A good agreement between the results is obtained, thus validating the model.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.77-85
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• 1999

By assuming a linearly graded depletion edge approximation in the intrinsic MOS region and by taking into account the mobility variation dependent on both lateral and vertical fields, a physics-based analytical model for a short-channel(n-channel) MOSFET is suggested. Derived expressions for the threshold voltage and the drain current of typical MOSFET is structures could be used in a unified manner for all operating range. The threshold voltage was calculated by changing following variables : channel length, drain-source voltage, source-substrate voltage, p-substrate doping level, and oxide thickness. It is shown that the threshold voltage decreases almost exponentially as the channel length decreases. In addition, the short-channel threshold voltage roll-off, the channel length modulation and the electron mobility degradation can be derived within a satisfactory accuracy.