• Title/Summary/Keyword: Mobility ratio

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Study on the Hydrogen Treatment Effect of Vacuum deposited Pentacene Thin Film Transistors

  • Lee, Joo-Won;Chang, Jae-Won;Kim, Hoon;Kim, Kwang-Ho;Kim, Jai-Kyeong;Kim, Young-Chul;Lee, Yun-Hi;Jang, Jin;Ju, Byeong-Kwon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.668-672
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    • 2003
  • In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen $(H_{2})$ plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $cm^{2}/Vs$, on/off current ratio of $10^{3}$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $cm^{2}/Vs$, on/off current ratio of $10^{6}$. threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this novel method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs

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Study on the Electrical Characterization of Inverted Staggered Pentacene Thin Film Transistor using Hydrogen Plasma Treatment (수소 플라즈마 처리를 이용한 역스테거드형 펜타센 트랜지스터의 전기적 특성 향상에 대한 연구)

  • 장재원;이주원;김재경;김영철;주병권
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.11
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    • pp.961-968
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    • 2003
  • In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $\textrm{cm}^2$/Vs, on/off current ratio of 10$^3$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $\textrm{cm}^2$/Vs, on/off current ratio of 10$\^$6/, threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs.

Electrical characteristics of Field Effect Thin Film Transistors with p-channels of CdTe/CdHgTe Core-Shell Nanocrystals (CdTe/CdHgTe 코어쉘 나노입자를 이용한 P채널 전계효과박막트렌지스터의 전기적특성)

  • Kim, Dong-Won;Cho, Kyoung-Ah;Kim, Hyun-Suk;Kim, Sang-Sig
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1341-1342
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    • 2006
  • Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at $150^{\circ}C$ to form the channels for the TFTs, and $Al_{2}O_{3}$ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate $SiO_2$ layer exhibits a mobility of $0.21cm^2$/ Vs and an Ion/Ioff ratio of $1.5{\times}10^2$ and a representative top-gate field-effect TFT with a top-gate $Al_{2}O_{3}$ layer provides a field-effect mobility of $0.026cm^2$/ Vs and an Ion/Ioff ratio of $2.5{\times}10^2$. $Al_{2}O_{3}$ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ior/Ioff ratio by 0.25, $3{\times}10^3$, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.

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Effect of Phenyl Vinyl Methyl Silicone (PVMQ) on Low Temperature Sealing Performance of Fluorosilicone Composites

  • Lee, Jin Hyok;Bae, Jong Woo;Choi, Myoung Chan;Yun, Yu-Mi;Jo, Nam-Ju
    • Elastomers and Composites
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    • v.56 no.4
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    • pp.209-216
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    • 2021
  • In this study, we observed the mechanical properties, thermal stability, and low temperature sealing performance of fluorosilicone elastic composites. When the blend ratio of Phenyl vinyl methyl silicone (PVMQ) was increased, the tensile strength, modulus at 100%, and compression set were decreased. The thermal stability of fluorosilicone elastic composites showed a similar tendency. These were caused by poorer green strength of PVMQ than Fluorosilicone rubber (FVMQ). The change in the tensile strength and elongation at -40℃ showed a decreasing tendency with increasing PVMQ blend ratio. By increasing the PVMQ blend ratio, low-temperature performance was improved. The Dynamic mechanical analysis (DMA) results showed that Tg was decreased and low-temperature performance was improved with increasing PVMQ blend ratio. However tanδ was decreased becaused of the poor green strength and elasticity of PVMQ. From a hysteresis loss at -40℃, the hysteresis loss value was increased and fluorosilicone elastic composites showed the decreasing tendency of elasticity with increasing PVMQ blend ratio. From the TR test, TR10 was decreased with increasing PVMQ blend ratio. FS-4 (45% PVMQ blended composites) showed a TR10 of -68.0℃ that was 5℃ lower than that of FS-1 (100% FVMQ). The gas leakage temperature was decreased with increasing PVMQ blend ratio. The gas leakage temperature of FS-4 was -69.2℃ that was 5℃ lower than that of FS-1. Caused by the polymer chain started to transfer from a glassy state to a rubbery state and had a mobility of chain under Tg, the gas leakage temperature showed a lower value than Tg. The sealing performance at low temperature was dominated by Tg that directly affected the mobility of the polymer chain.

Analysis of MANET Protocols Using OPNET (OPNET을 이용한 MANET 프로토콜 분석)

  • Zhang, Xiao-Lei;Wang, Ye;Ki, Jang-Geun;Lee, Kyu-Tae
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.9 no.4
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    • pp.87-97
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    • 2009
  • A Mobile Ad hoc Network (MANET) is characterized by multi-hop wireless connectivity, frequently changing network topology with mobile nodes and the efficiency of the dynamic routing protocol plays an important role in the performance of the network. In this paper, the performance of five routing protocols for MANET is compared by using OPNET modeler: AODV, DSR, GRP, OLSR and TORA. The various performance metrics are examined, such as packet delivery ratio, end-to-end delay and routing overhead with varying data traffic, number of nodes and mobility. In our simulation results, OLSR shows the best performance in terms of data delivery ratio in static networks, while AODV has the best performance in mobile networks with moderate data traffic. When comparing proactive protocols (OLSR, GRP) and reactive protocols (AODV, DSR) with varying data traffic in the static networks, proactive protocols consistently presents almost constant overhead while the reactive protocols show a sharp increase to some extent. When comparing each of proactive protocols in static and mobile networks, OLSR is better than GRP in the delivery ratio while overhead is more. As for reactive protocols, DSR outperforms AODV under the moderate data traffic in static networks because it exploits caching aggressively and maintains multiple routes per destination. However, this advantage turns into disadvantage in high mobility networks since the chance of the cached routes becoming stale increases.

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Effects of Energetic Disorder and Mobility Anisotropy on Geminate Electron-hole Recombination in the Presence of a Donor-Acceptor Heterojunction

  • Wojcik, Mariusz;Michalak, Przemyslaw;Tachiya, M.
    • Bulletin of the Korean Chemical Society
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    • v.33 no.3
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    • pp.795-802
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    • 2012
  • Geminate electron-hole recombination in organic solids in the presence of a donor-acceptor heterojunction is studied by computer simulations. We analyze how the charge-pair separation probability in such systems is affected by energetic disorder of the media, anisotropy of charge-carrier mobilities, and other factors. We show that in energetically disordered systems the effect of heterojunction on the charge-pair separation probability is stronger than that in idealized systems without disorder. We also show that a mismatch between electron and hole mobilities reduces the separation probability, although in energetically disordered systems this effect is weaker compared to the case of no energetic disorder. We demonstrate that the most important factor that determines the charge-pair separation probability is the ratio of the sum of electron and hole mobilities to the rate constant of recombination reaction. We also consider systems with mobility anisotropy and calculate the electric field dependence of the charge-pair separation probability for all possible orientations of high-mobility axes in the donor and acceptor phases. We theoretically show that it is possible to increase the charge-pair separation probability by controlling the mobility anisotropy in heterojunction systems and in consequence to achieve higher efficiencies of organic photovoltaic devices.

A Study of Board the Train Designed for Wheelchair Users on Welding Condition (휠체어 사용자를 위한 열차 탑승 장치 설계와 용접 조건)

  • Lee, Chul Ku;Kim, Incheol;Lee, Wooram
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.1
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    • pp.92-99
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    • 2013
  • The ratio of mobility handicapped was 12,110,000 in late 2009 about 24.4% of total population. The number of handicapped population is increasing continuously due to traffic accidents and industrial disasters. Therefore, the purpose of this research is to suggest a design for passengers on wheelchairs to get into and off to raise handicapped or elderly people's right of mobility. The scope of this research is mobility handicapped especially wheelchair passengers who use vans, small buses, and trains. The ramp design of vans is module form. The ramp is moved with screw jack and guides are installed on each side to increase stability. Moreover, a bridge was installed for smooth getting in and off of the van. The ramp design for small bus is lowed by 200m in order not to have obstacle such as speed bump when getting in or off. In order to reduce vulnerable environment and administration, air slide cylinder was chosen. Lastly, for the ramp design of train, the principle of link was used that the simpler structure made the weight lighter and installation in the train became easier. If we look at the conjugation condition of heterogeneous materials to produce a ramp, proper welding condition for cold steel plate and stainless plate is 3kW output and 3-5m/min of welding speed using laser beam seems proper.

Effect of Sputtering Working Pressure on the Optical and Electrical Properties of InZnO Thin-Film Transistors (스퍼터링 공정 압력이 InZnO 박막트랜지스터의 광학 및 전기적 특성에 미치는 영향)

  • Park, Ji-Min;Kim, Hyoung-Do;Jang, Seong Cheol;Kim, Hyun-Suk
    • Korean Journal of Materials Research
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    • v.30 no.4
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    • pp.211-216
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    • 2020
  • Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30㎠/Vs) and large on/off ratio.

Measurement of Soot Nano-Particle Using LIIM(Laser-Induced Ion Mobility) (LIIM(Laser-Induced Ion Mobility) 계측을 이용한 매연 나노입자 측정)

  • Lee, Eui-Ju
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.28 no.9
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    • pp.1110-1116
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    • 2004
  • Experimental measurements of laser-induced ion mobility(LIIM) were performed for ethene/air premixed flames operated near the soot inception point. Soot was ionized using a pulsed laser operated at 532 nm. The ionization signal was collected with a tungsten electrode located in the post-flame region. ionization signals were collected using both a single electrode and dual electrode configuration. Prior LIIM studies have focused on the use of a single biased electrode to generate the electric field, with the burner head serving as the path to ground. In many practical combustion systems, a path to ground is not readily available. To apply the LIIM diagnostic to these geometries, a dual electrode geometry must be employed. The influence of electrode configuration, flame equivalence ratio, and flame height on ionization signal detection was determined. The efficacy of the LIIM diagnostic to detect soot inception in the post-flame region of a premixed flame using a dual electrode configuration was investigated. For the different dual electrode configurations tested, the dual parallel electrode geometry was observed to be most sensitive to detect the soot inception point in a premixed flame.

Design and Evaluation of a New Multicast Protocol in Large Micro-Mobility Environments (대규모 마이크로 모빌리티 환경에서의 멀티캐스트 프로토콜의 구현과 평가)

  • Kang, Ho-Seok;Shim, Young-Chul
    • The KIPS Transactions:PartC
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    • v.15C no.1
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    • pp.51-60
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    • 2008
  • Micro-mobility protocols have been developed to reduce the control message overhead due to movements of mobile nodes. With the spread of mobile devices, services using mobile nodes are increasing and multicast services are becoming more important in providing multimedia services. In this paper we propose a new multicast protocol suitable for micro-mobility environments. The proposed protocol is designed to maintain optimal multicast routing paths and continue to provide multicast services without disruption in spite of frequent handoffs due to movements of mobile nodes. We used simulation to evaluate the proposed protocol, compared its performance with existing multicast protocols for mobile environments including bi-directional tunneling, remote subscription, and MMA, and observed that the proposed protocol exhibited better performance in terms of transmission success ratio and overhead on the network.