• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.8
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• pp.844-853
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• 2008

This paper describes the design of a FEM(Front End Module) having power detection function for mobile handset application. The designed FEM consists of a MMIC(Monolithic Microwave Integrated Circuits) power amplifier chip, SAW Tx filter and duplexer, diode power detector and stripline matching circuit. An LTCC(Low Temperature Co-fired Ceramics) technology is adopted for miniaturized FEM. The frequency band is $824{\sim}869$ MHz which is the uplink Tx band of the CDMA mobile system. The size of designed FEM is $7.0{\times}5.5{\times}1.5\;mm^3$, which is an ultra-small size even though the power detector circuit is included. All sub-components of FEM have been developed and measured in advance before being integrated into FEM. The measured output power and gain are 27 dBm and 27 dB, respectively. In addition, the measured ACPR characteristics are 46.59 dBc and 55.5 dBc at 885 kHz and 1.98 MHz offset, respectively.

• Journal of the Korea Society of Computer and Information
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• v.15 no.8
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• pp.59-66
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• 2010

In this paper, the internal antenna for mobile communication handset which is able to control both coupling coefficient and resonant frequency without any major modification of radiator and ground plane of antenna. Novel internal antenna with its controllable resonant frequency is presented for triple-band or over mobile handsets. The operating range can include GSM(880~960 MHz), GPS($1,575{\pm}10MHz$), DCS(1,710~1,880MHz), US-PCS(1,850~1,990 MHz), and W-CDMA(1,920~2,170 MHz). The proposed antenna is realized by combination of a half wavelength loaded line antenna and PIFA(Planner Inverted F Antenna). A single shorting and feeding points are used and they are common to both antenna structures. One of two inductors which is placed at each shorting post, one inductor is for adjusts amount of coupling, and the other controlling the resonant frequency in DCS/US-PCS/WCDMA bands. The inductance range for control of input impedance is between 0nH and 6.8nH, and each of gain variation in GSM, GPS and DCS/US-PCS/WCDMA band is under 0.15dBi, 0.73dBi and 0.29dBi. The inductance range for control of the resonant frequency is between 1640MHz and 2500MHz, and each of gain variation in GSM, GPS and DCS/US-PCS/WCDMA band is under 0.46dBi, 0.53dBi and 0.8dBi.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.7
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• pp.3140-3145
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• 2012

In this paper, a design method for a compact slot antenna fed by a coplanar waveguide (CPW) is studied. A T-shaped tuning stub is inserted inside a narrow rectangular slot and the slot is impedance matched to the CPW feedline by adjusting the width, length, and position of the stub. The resonance frequency is adjustable by the slot length and the antenna size can be reduced by bending the slot. The resonance frequency and impedance matching property of the compact slot antenna are similar to those of the half-wavelength slot antenna, which enables one to design compact antenna of this type with ease. A compact slot antenna for 2.45-GHz ISM band is designed, fabricated on an FR4 substrate (dielectric constant of 4.4 and thickness of 0.8 mm), and experimentally tested. The measured results agree well with the simulations, which confirms the validity of this study. The fabricated compact slot antenna shows an impedance bandwidth of 200 MHz(2.32-2.52 GHz) for a VSWR < 2, which is suitable for 2.45-GHz ISM band (2.4-2.48 GHz). The measured radiation patterns show ${\infty}$-shaped directional pattern in the E-plane and nearly omni-directional pattern in the H-plane with a peak gain of 2.0 dBi, which are similar to those of a monopole antenna. The proposed antenna is expected to be suitable for the applications as antennas for WLAN, RFID, and mobile handset.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.12
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• pp.2674-2685
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• 1997

In this paper, the design and imprlementation of dual-band power amplifier which is used as a critical part for mobile phone to be simultaneously working at a dual band, 800MHz CDAM and PCS frequency band is described. DC operating point of power FET is limited to Class-B to enable long talk time considering that the tyupical power range of CDMA phones in working is around 10 to Class-B to enable long talk time considering that the typical power range of CDMA phones in working is around 10 to 15dBm, i.e., liner range. The power amplifier which employs two GaAs FETs with good linerity at a low operating point has duplexer cuplexer circuit to separate two frequency bands at input and output stage. Electromagnetic analysis for via holes and coupling between narrow transmission lines is included to design a circuit. Moduld size of 0.96CC($22{\times}14.5{\times}3mm^3$) and maximum module current of 130mA at output power range, 10 to 15dBm are attained. The power amplifer module has achieved ACPR performance with 2 to 3dB marging from IS-95 requirement at output powers, 23.5dBm for PCS and 28dBm for 800MHz CDMA respectively.