• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.214-216
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• 2013

The atomic and electronic properties of molybdenum disurfide ($MoS_2$) nanostructures are investigated through density functional theory (DFT) calculations. We find that the band gap is indirect (about 1.79 eV) and direct (about 1.84 eV) in GGA for 2-dimensional $MoS_2$ in our calculations. On the other hand, 1-dimensional armchair nanoribbons have semiconductor properties (band gap is about 0.11~0.28 eV), while 1-dimensional zigzag nanoribbons are metallic.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.277.1-277.1
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• 2016

We report on synthesis of large-area MoS2 using chemical vapor deposition (CVD). Relatively uniform MoS2 are obtained. To fabricate field-effect transistor (FET) devices, MoS2 films are transferred to another SiO2/Si substrate using polystyrene (PS) and patterned using oxygen plasma. In addition, to reduce contact resistance, synthesis of graphene used as channel. Device characteristics are presented and compared with the reported results.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.96-102
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• 2001

plasma-sprayed Cr$_2$O$_3$-based coatings containing MoO$_3$ were studied to gain a better understanding of the influence of MoO$_3$ composition in the coatings on their tribological behaviour. A reciprocal type tribo-tester was employed to examine friction and wear behavior of the specimens at high temperature(450。C). The physical characteristics of worn surfaces were investigated by scanning electron microscopy and chemical composition of the coating surfaces was analyzed using a X-ray photoelectron spectrometer. The results showed that friction coefficient of the MoO$_3$-added coatings were lower than those without MoO$_3$ addition. The larger protecting layers were observed at the worn surface of plasma spray coated specimens with MoO$_3$ addition. XPS analysis of the protecting layer indicated that MoO$_3$ composition was dominantly formed at the surface. MoO$_3$ composition in the protecting layer appears to be more favorable in reducing the friction.

• Advances in nano research
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• v.16 no.4
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• pp.341-352
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• 2024

This study investigates the heat and mass transfer characteristics of a MoS₂ nanoparticle suspension in ethylene glycol over a porous stretching sheet. MoS₂ nanoparticles are known for their exceptional thermal and chemical stability which makes it convenient for enhancing the energy and mass transport properties of base fluids. Ethylene glycol, a common coolant in various industrial applications is utilized as the suspending medium due to its superior heat transfer properties. The effects of variable thermal conductivity, variable mass diffusivity, thermal radiation and thermophoresis which are crucial parameters in affecting the transport phenomena of nanofluids are taken into consideration. The governing partial differential equations representing the conservation of momentum, energy, and concentration are reduced to a set of nonlinear ordinary differential equations using appropriate similarity transformations. R software and MATLAB-bvp5c are used to compute the solutions. The impact of key parameters, including the nanoparticle volume fraction, magnetic field, Prandtl number, and thermophoresis parameter on the flow, heat and mass transfer rates is systematically examined. The study reveals that the presence of MoS₂ nanoparticles curbs the friction between the fluid and the solid boundary. Moreover, the variable thermal conductivity controls the rate of heat transfer and variable mass diffusivity regulates the rate of mass transfer. The numerical and statistical results computed are mutually justified via tables. The results obtained from this investigation provide valuable insights into the design and optimization of systems involving nanofluid-based heat and mass transfer processes, such as solar collectors, chemical reactors, and heat exchangers. Furthermore, the findings contribute to a deeper understanding of stretching sheet systems, such as in manufacturing processes involving continuous casting or polymer film production. The incorporation of MoS₂-C₂H₆O₂ nanofluids can potentially optimize temperature distribution and fluid dynamics.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• KSTLE International Journal
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• v.1 no.2
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• pp.91-94
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• 2000

The friction and wear behavior of MoS$_2$coatings was investigated using a pin and disk type tester. The experiment was conducted with silicon nitride as the pin material and MoS$_2$-on-bearing steel as the disk material under different operating conditions that included linear sliding velocities within a range of 2266 mm/sec, normal loads varying from 9.829.4 N, corresponding to maximum contact pressures of 1.782.83 Gpa, and high vacuum, medium vacuum, and ambient air atmospheric conditions. The results showed a low friction coefficient far the coating in a high vacuum, plus the friction coefficient and wear volume increased with an increased normal load. Furthermore, under high load conditions, the friction coefficient and wear volume also increased with an increased sliding velocity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.192-192
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals like graphene, hexagonal boron nitride (h-BN), molybdenum disulfate ($MoS_2$) and organic thin film have been studied intensely. In this talk, I will demonstrate the $MoS_2$ field effect transistor (FET) toward performance enhancement by insulating h-BN substrate.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.280-284
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• 2016

본 연구에서는 Density functional theory(DFT) 계산을 이용하여, $MoS_2$의 Mo와 S를 다른 원자로 치환 했을 때 $2H-MoS_2$ monolayer의 basal plane에서 HER활성을 향상시켰다. 특히 Ge와 Rh를 치환한 경우, ${\Delta}G_H$가 각각 0.03eV, 0,07eV로 최적에 가까운 HER활성이 나타났다. 다른 원자의 치환이 Fermi level 근처의 DOS(density of states)를 높여, ${\Delta}G_H$을 0에 가깝게 낮출 수 있음을 확인하였다. 또한 치환되는 원자의 농도, 그리고 strain을 변화시켜 농도와 strain의 증가에 따른 ${\Delta}G_H$ 감소를 발견했다. 이로써 각치환되는 원자마다, 치환 농도와 strain을 함께 변화시켜 ${\Delta}G_H$을 낮출 수 있었다. ${\Delta}G_H$가 0에 가까운(${\pm}{\pm}0.2eV$ 이내) 원자종류, 치환 농도, strain의 여러 조합을 찾았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.100-100
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• 2013

Among recently discovered 2-dimensional materials, molybdenum disulfide has fascinating physical properties. It is atomically thin and is a semiconductor with with a similar level of bandgap with silicon. Especially, its properties get interesting when it becomes thinner. Its bandgap goes through bandgap transition from indirect to direct gap. Also its gap size increases as its thickness decreases. In this talk, I am going to present our recent work on characterization of its electrical and optical properties. We used Raman and PL spectroscopy to observe its property dependence on thickness. We fabricated electrical devices to study optimal condition for MoS2 devices. Also we synthesized large-area MoS2 films for devices applications.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.5
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• pp.35-41
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• 2008

This paper presents the design method of current-mode signal processing for high speed and low power digital audio signal processing. The digital audio processor requires a digital signal processing such as fast Fourier transform (FFT), which has a problem of large power consumption according to the settled point number and high speed operation. Therefore, a current-mode signal processing with a switched Current (SI) circuit was employed to the digital audio signal processing because a limited battery life should be considered for a low power operation. However, current memory that construct a SI circuit has a problem called clock-feedthrough. In this paper, we examine the connection of dummy MOS that is the common solution of clock-feedthrough and are willing to calculate the relation of width between dummy MOS for a proposal of the design methodology for improvement of current memory. As a result of simulation, in case of that the width of memory MOS is 20um, ratio of input current and bias current is 0.3, the relation of width between switch MOS and dummy MOS is $W_{M4}=1.95W_{M3}+1.2$ for the width of switch MOS is 2~5um, it is $W_{M4}=0.92W_{M3}+6.3$ for the width of switch MOS is 5~10um. Then the defined relation of MOS transistors can be a useful design guidance for a high speed low power digital audio processor.