• Bulletin of the Korean Chemical Society
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• 제25권7호
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• pp.1036-1040
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• 2004

$Mn_{12}O_{12}(O_2CCH_2CH_2CH_2Cl)_{16}(H_2O)_4]$ (noted as $Mn_{12}$-BuCl), a new polynuclear complex of manganese chlorobutyrate has been successfully prepared by substitution of acetate with 4-chlorobutyric acid. The $Mn_{12}-BuCl$ crystallizes into triclinic space group P-1 with a = 14.5560(11) ${\AA}$, b = 14.5819(11) TEX>${\AA}$, c = 27.265(2) ${\AA}$, ${\alpha}\;=\;84.1140(10)^{\circ}\;,\;{\beta}\;=\;88.805(2)^{\circ},\;{\gamma}\;=\;89.8820(10)^{\circ}$, and Z = 2. The local environments of manganese 3+ and 4+ ions of the title compound are close to those of other $Mn_{12}$ compounds. The electrochemical data for $Mn_{12}-BuCl$ involve reversible reactions of two-electron reductions. The $Mn_{12}-BuCl$ also presents magnetic relaxation below 10 K implying that each molecule behaves as a single molecule magnet.

• 한국재료학회지
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• 제30권12호
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• pp.666-671
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• 2020

The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

• 공업화학
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• 제10권1호
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• pp.80-84
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• 1999

출발 물질로 lithium acetate와 manganese acetate를 이용하여 졸겔법으로 결함 스피넬 구조인 $Li_{4/3}Mn_{5/3}O_4$를 합성하였으며, 리튬이차전지용 전극물질로 이용하기 위한 전극 특성을 조사하였다. $AA/Mn(OAc)_2$의 몰비를 0.2, $H_2O/Mn(OAc)_2$에 대한 $NH_4OH/Mn(OAc)_2$의 혼합 몰비를 0.4로 혼합하여 xerogel을 합성하고 이를 산소 분위기하에서 $150^{\circ}C$에서 12시간 동안 1차 열처리한 다음 $350^{\circ}C$에서 12시간 동안 2차 열처리하여 합성하였다. 2.0~3.2V의 전위 영역에서 충 방전 실험한 결과 $Li/Li_{4/3}Mn_{5/3}O_4$ cell은 84.23 mAh/g의 방전용량을 나타내었으며, 좋은 cycleability을 나타내었다.

• 한국자기학회지
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• 제12권3호
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• pp.83-87
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• 2002

• 대한전기학회논문지
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• 제41권6호
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• 한국세라믹학회지
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• 제13권3호
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• pp.13-20
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• 1976

The magnetic properties, especially the magnetostriction, of ferroxplana $Zn_{1-x}$$M_X$Y(x=0.0, 0.2, 0.4, 0.6) were investigated at room temperature. In general, the Curie temperature and the permeability of ferroxplana $Zn_{1-X}$$Mn_X$Y increased while the amount of the other phase decrease with increased concentration of dopant $Mn^{2+} for $Zn^{2+}. The magnetostriction constnats K1, K2, K3 and K4 for ZnY were ＋0.3, -5.0, -4.3 and $-4.8{\times}$$10^{-6} while that for 4Zn^0.8$ $Mn^0.2$Y were ＋2.5, -5.4, -6.0 and $-3.4{\times}10^{-6}$, respectively.

• Bulletin of the Korean Chemical Society
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• 제19권12호
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• pp.1320-1325
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• 1998

ZnGa2O4: Mn phosphors were prepared by a new chemical process, and their photoluminescence and electron paramagnetic resonance characteristics were investigated. The chemical method showed a low temperature formation of phosphors and a rod-type shape of particles. The strong ultraviolet emission was observed in the undoped ZnGa2O4 phosphor, while strong green emission in the Mn2+-activated ZnGa2O4 phosphor. The green emission intensity of the phosphor prepared by the chemical method was much stronger than that prepared by the conventional method. This difference with preparation methods was interpreted as due to the difference in the distribution of Mn2+ in the host lattice. From EPR results, it was explained that the line intensity of the undoped ZnGa2O4 is associated with the electrical conductivity of this material and the concentration quenching of green luminescence of ZnGa2O4: Mn at higher Mn2+ concentration is attributed to the coupling by exchange interaction between Mn2+ ions.

• Journal of Magnetics
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• 제8권4호
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• pp.149-152
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• 2003

The electronic structure of Mn12-Ac molecular magnet has been investigated using synchrotron radiation. The valence-band photoemission spectroscopy (PES) measurement reveals that Mn 3d states are located near the top of the valence band. The trend in the measured valence-band PES spectra is found to be consistent with that in the calculated local density of states. The Mn 2p x-ray absorption spectroscopy (XAS) measurement provides evidence for the Mn$^{3+}$-Mn$^{4+}$ mixed-valent states.

• 한국자기학회지
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• 제12권1호
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• pp.24-29
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• 2002

반강자성 FeMn과 강자성 Co를 이용한 기판/Co/Cu/Co/FeMn 구조의 스핀밸브를 제조하여 자기저항 특성을 조사하였다. Cu를 하지층으로 하여 FeMn 반강자성층을 형성시킨 결과 ${\gamma}$y-FeMn과 고착층 Co와의 교환이방성 결합이 향상되었다. FeMn증착시 Ar 압력과 power를 달리해가며 최적의 FeMn 증착조건을 고찰하였다. 이로부터 FeMn과 Co간의 계면이 평탄해질수록 교환결합의 세기가 증가함을 알 수 있었다. AES 분석으로부터 열처리에 의해 Co와 Cu간 계면고용층이 소멸됨을 확인하였다. 기판/Co/Cu/Co/FeMn 스핀밸브를 열처리함으로써 교환이방성 결합과 자기저항비를 각각 3배와 1.4배 이상 향상시켰다.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.376-380
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• 2017

In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (${\pm}1%$ of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at $60^{\circ}C$); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at $25^{\circ}C$). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.