• 한국산학기술학회논문지
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• 제15권6호
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• pp.3403-3409
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• 2014

동축 와류형 분사기 19개로 구성된 연소기 헤드와 냉각채널을 갖는 연소실을 이용하여 연소시험을 수행하였다. 추진제로는 액체산소와 케로신(Jet A-1)이 사용되었으며, 연소시험은 연소실 압력 59~82 bar, 혼합비 2.0~3.0 영역에서 수행되었다. 냉각채널 연소실의 냉각 유체로는 물이 사용되었으며, 냉각채널 입구와 출구에서의 물의 온도를 측정하여 열유속 값을 계산하였다. 본 연구에서는 연소불안정에 따른 열전달 영향을 살펴보는 것을 목표로 하였으며, 이를 위해 냉각수의 온도 변화를 계측하였다. 몇 번의 연소시험에서 연소불안정 현상이 발생하였으며, 이때 열유속이 5~20% 정도 증가하는 결과가 나타났다. 또한 열유속은 연소불안정이 발생하는 초기 시점에서 최대가 되는 것을 알 수 있었다.

• 한국추진공학회지
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• 제24권1호
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• pp.24-33
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• 2020

본 연구에서는 액체로켓엔진용 동축 와류형 분사기의 연소불안정 특성을 파악하기 위해 기체 추진제를 이용한 모델 연소실험을 수행하였다. 연소실 공진 주파수와 분사기 혼합조건의 영향을 알아보고자, 연소실 길이, 분사기, 리세스 길이, 추진제 혼합비를 변경하면서 연소실 압력섭동을 측정하였다. 실험 결과, 각 실험조건에 따른 압력섭동 변화를 확인하였으며 안정성 매핑을 통해 연소안정성을 평가하였다. 그리고 연소실 길이와 리세스 길이 변화에 따라 종방향 모드 및 켈빈-헬름홀츠 불안정이 발생함을 발견하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권5호
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.52-55
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• 2000

In this study, (Ba,Sr)$TiO_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) as a function Ar/$CF_4$ gas mixing ratio. Experiment was done by varying the etching parameters such as rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 ${\AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X -ray photoelectron spectroscopy(XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the etching. To analyze the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1509-1511
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• 2001

In this study, etching characteristics of polyimide(Pl) film with $O_2/CF_4$ gas mixing ratio was studied using inductively coupled plasma (ICP). The etch rate and selectivity were evaluated to chamber pressure and gas mixing ratio. High etch rate (over 8000$\AA$/min) and vertical profile were acquired in $CF_4$/($CF_4+O_2$) of 0.2. The selectivities of polyimide to PR and polyimide to $SiO_2$ were 1.15, 5.85, respectively. The profiles of polyimide film etched in $CF_4/O_2$ were measured by a scanning electron microscope (SEM) with using an aluminum hard mask pattern. The chemical states on the polyimide film surface were measured by x-ray photoelectron spectroscopy (XPS).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.34-38
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• 1999

In this study, molybdenum thin films were etched with the various Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio in an magnetically enhanced reactive ion etching(MERIE) by the etching parameter such as rf power of 185 watts, chamber pressure of 40 mTorr and B-field of 80 gauss. The etch rate was 150 nm/min under Cl$_2$/(Cl$_2$+SF$_{6}$) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO$_2$, photoresist were respectively 0.94, 0.50. The surface reaction of the etched Mo thin films was investigated with X - ray photoelectron spectroscopy (XPS).PS).

• 한국자동차공학회논문집
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• 제6권6호
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• pp.63-71
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• 1998

In a diesel engine the phenomenon of spray impaction on a combustion chamber wall has been taken as an undesirable matter because of the deposition of fuel on the surfaces, and the subsequent slow evaporation and mixing with air resulting in unburned hydrocarbons. Therefore many researches have concentrated on avoiding fuel impaction on surfaces. On the contrary done a number of studies using spray wall impactions in a positive way, which makes the droplets smaller, changes the direction into free spaces far from the wall and also improves mixing with air. In this paper the angle variations of the impaction land sufrace prepared for the injection spray is analysed as a simulative manner. The spray dispersions, vapor distributions and flow fields are compared with impacting angle variation. The results show more angle give more vapor distribution until $15^{\circ}$.

• 한국자동차공학회논문집
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• 제2권6호
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• pp.76-86
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• 1994

Combustion of diesel engine depends on the mixing of air and evaporating fuel during ignition delay greatly. Variation of air-fuel mixing rate and ignition delay for engine operating condition causes difference of combustion, performance and exhaust emissions. This study is investigated in a turbocharged diesel engine of IDI swirl chamber type. In the results, As injection timing is advanced until $12.6^{\circ}$ BTC, ignition delay decreases. NOx concentration and smoke level in exhaust gas increases for advanced injection timing Ignition delay, combustion period, pressure rise rate and exhaust gas temperature are increased with increasing engine speed. And ignition delay at high load is more decreased than that at low load. Ignition delay and combustion period are decreased with increasing intake pressure. Power increases, temperature and CO, NOx concentration in exhaust gas decreases as intake pressure increases. With increasing load, ignition delay is decreased and combustion period, motoring pressure are increased.