• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.1-7
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• 2021

In this paper, by embedding a bare-die chip-type drive amplifier into the PCB composed of ABF and FR-4, it implements an embedded active device that can be applied in 28 GHz band modules. The ABF has a dielectric constant of 3.2 and a dielectric loss of 0.016. The FR-4 where the drive amplifier is embedded has a dielectric constant of 3.5 and a dielectric loss of 0.02. The proposed embedded module is processed into two structures, and S-parameter properties are confirmed with measurements. The two process structures are an embedding structure of face-up and an embedding structure of face-down. The fabricated module is measured on a designed test board using Taconic's TLY-5A(dielectric constant : 2.17, dielectric loss : 0.0002). The PCB which embedded into the face-down expected better gain performance due to shorter interconnection-line from the RF pad of the Bear-die chip to the pattern of formed layer. But it is verified that the ground at the bottom of the bear-die chip is grounded Through via, resulting in an oscillation. On the other hand, the face-up structure has a stable gain characteristic of more than 10 dB from 25 GHz to 30 GHz, with a gain of 12.32 dB at the center frequency of 28 GHz. The output characteristics of module embedded into the face-up structure are measured using signal generator and spectrum analyzer. When the input power (P_in) of the signal generator was applied from -10 dBm to 20 dBm, the gain compression point (P_1dB) of the embedded module was 20.38 dB. Ultimately, the bare-die chip used in this paper was verified through measurement that the oscillation is improved according to the grounding methods when embedding in a PCB. Thus, the module embedded into the face-up structure will be able to be properly used for communication modules in millimeter wave bands.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.9
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• pp.936-943
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• 2013

This work presents the design and measured results of the single channel automotive radar system for 76.5~77 GHz long range FMCW radar applications. The transmitter uses a commercial GaAs monolithic microwave integrated circuit(MMIC) and the receiver uses the down converter designed using 65 nm CMOS process. The output power of the transmitter is 10 dBm. The down converter chip can operate at low LO power as -8 dBm which is easily supplied from the transmitter output using a coupled line coupler. All MMICs are mounted on an aluminum jig which embeds the WR-10 waveguide. A microstrip to waveguide transition is designed to feed the embedded waveguide and finally high gain horn antennas. The overall size of the fabricated radar system is $80mm{\times}61mm{\times}21mm$. The radar system achieved an output power of 10 dBm, phase noise of -94 dBc/Hz at 1 MHz offset and a conversion gain of 12 dB.