• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.8A
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• pp.739-752
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• 2002

Recently, to utilize the limited bandwidth effectively, the concept of partial response (PR) signaling has widely been adopted in both the high-speed data transmission and high-density digital recording/playback systems such as digital microwave, digital subscriber loops, hard disk drives, digital VCR's and digital versatile recordable disks and so on. This paper is concerned with adaptive equalization of partial response channels particularly for the magnetic recording channels. Specifically we study how the PR channel equalizers work for different choices of desired or reference signals used for adjusting the equalizer weights. In doing so, we consider three different configurations that are actually implemented in the commercial products mentioned above. First of all, we show how to compute the theoretical values of the optimum Wiener solutions derived by minimizing the mean-squared error (MSE) at the equalizer output. Noting that this equalizer MSE measure cannot be used to fairly compare the three configurations, we propose to use the data MSE that is computer just before the final detector for the underlying PR system. We also express the data MSE in terms of the channel impulse response values, source data power and additive noise power, thereby making it possible to compare the performance of the configurations under study. The results of extensive computer simulation indicate that our theoretical derivation is correct with high precision. Comparing the three configurations, it also turns out that one of the three configurations needs to be further improved in performance although it has an apparent advantage over the others in terms of memory size when implemented using RAM's for the decision feedback part.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.