• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.202-207
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• 1997

Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.

• Electrical & Electronic Materials
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• v.12 no.8
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• pp.39-45
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• 1999

Comparative photoresponsive current-volt-age characteristics of n-channel PHEMT and MESFET on GaAs substrate. with (W/L)=200${\mu}{\textrm}{m}$/1${\mu}{\textrm}{m}$ of gates, are reported as a function of electro-optical stimulation (P\ulcorner, λ=830nm) for the first time as far as we know. Significantly different photoresponses are observed in MESFET and PHEMT, mainly due to different optoelectronic mechanisms in the formation and current conduction of channel carriers. Under high optical power, high photoresponsity with a strong non-linearity with P\ulcorner, predominantly due to a parallel conduction via a heavily doped Al\ulcornerGa\ulcornerAs donor layer, was observed in PHEMT while the optically induced drain current has been very small but monotonically increasing with optical stimulation in GaAs MESFET. We also investigated differences in optically stimulated gate leakage currents and photonic gate responses on gate voltage and drain voltage as a function of P\ulcorner. Based on the drain and gate responses to electro-optical stimulation. PHEMTs are expected to be a better candidate for high performance photonically responsive microwave device compared with MESFETs.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.115-116
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• 2006

Dielectric PST (20/80) / PST (80/20) heterolayered thin films structures were created by a consequent deposition of the PST (20/80) and PST (80/20) thin films on the $Pt/Ti/SiO_2/Si$ substrate using alkoxide-based sol-gel method. Both structural and dielectric properties of heterolayered PST thin films were investigated for the tunable microwave device applications. As the number of coating increases, the lattice distortion decreased. It can be assumed that the lower PST layer affects a nucleation site or a seeding layer for the formation of the upper PST layer. The dielectric constant, dielectric loss and tunability of the PST-6 heterolayered structure measured at 100 kHz were 399, 0.022 and 57.9%, respectively. All these parameters showed an increase with increasing number of coatings due to the decrease in lattice distortion.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.6
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• pp.169-174
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• 2012

Electromagnetic interference(EMI) shielding effectiveness(SE) was investigated in of woven fabric made of epoxy/copper-nickel fabrics and nickel coated carbon fiber reinforced acrylonitrile-butadiene-styrene(ABS) composites. The coaxial transmission line method was used to measure the EMI shielding effectiveness of the composites. We designed and constructed a measuring system, consisting of a network analyzer and a device that plays the serves as a sample holder and at the same time as a transmission medium of the incident electromagnetic wave. The measurement of SE were carried out frequency range from 100MHz to 2GHz. It is observed that the SE of the composits is the frequency dependent increase with the increase in nickel coated carbon fibre volume fraction. The nickel coating with 20wt% ABS composite was shown to exhibit up to 60dB of SE. The result that nickel coated carbon fibre ABS composite can be used for the purpose of EMI shielding as well as for some microwave applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1968-1973
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• 2013

We present the enhancement of narrowband modulation response of an optical source by integrating a dual-electrode distributed feedback (DFB) laser with an electro-absorption modulator (EAM). The dual-electrode DFB laser exhibits a multiple optical modes owing to a self-pulsation in GHz range. By modulating the laser and modulator sections of the integrated device simultaneously, 20-dB of narrowband modulation response enhancement at 6 GHz with 7-GHz tuning range has been observed.

• Journal of the Korea Institute of Military Science and Technology
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• v.25 no.2
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• pp.135-143
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• 2022

In this paper, the compact waveguide slot array antenna for interferometric radar altimeter is proposed. The proposed antenna structure consist of corrugation structure which is applied between each channel to improve isolation, three-channel waveguide slot array antenna and feeder. In addition, to reduce the occurrence of phase ambiguity, the baseline spacing of the three-channel antenna is analyzed and the results are applied to the design. For compact design, reduced height and SMP connector structure are used and the dip brazing method which is the conjugation method after dipping to flux is used for the fabrication of the lightweight antenna. The measurement result of the proposed antenna shows less than 1.41 : 1 (VSWR) and 48.3 dBc (isolation). The antenna gain is higher than 20.2 dBi and the side lobe levels are lower than 18.8 dB (vertical plane) and 10.0 dB (horizontal plane).

• Science of Emotion and Sensibility
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• v.14 no.4
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• pp.531-536
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• 2011

The precise measurement of human emotion is of pivotal importance in the field of emotion science. Based on the perspective of psychoneuroimmunoendocrinology, human emotion is now considered to be measurable by body fluid. The biological molecule cortisol, which is known for the stress hormone, has been widely investigated to help researchers to estimate the stress loaded on human body. Until now, several measurement techniques such as High Performance Liquid Chromatography (HPLC), fluorometric assay, and reverse phase chromatography have been developed. However, since these measurements are expensive, take relatively long time for an operation, and they are not portable, they are not appropriate for POCT (point of care testing). In this paper we demonstrate the performance of a miniaturized-microwave resonant device in the measurement of cortisol. Our method has many advantages in that it requires a small volume of sample, has fast response time, is easy to operate and needs no labeling process. Besides, it will shed a light on the measurement techniques for emotion science.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.11
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• pp.635-639
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• 2016

In the devices used in the microwave frequency band, the gain decreases as the frequency increases due to the parasitic component. To compensate for these characteristics, a linear gain equalizer with an opposite slope is needed in wideband systems, such as those used for electronic warfare. In this study, a linear gain equalizer that can be used in the 18 ~ 40GHz band is designed and fabricated. Circuit design and momentum design (optimizations) were carried out to reduce the errors between design and manufacturing. A thin film process is used to minimize the parasitic components within the implementation frequency band. A sheet resistance of 100 ohm/square was employed to minimize the wavelength variation due to the length of the thin film resistor. This linear gain equalizer is a structure that combines a quarter wavelength-resonator on a series microstrip line with a resistor. All three 1/4 wavelength short resonators were used. The fabricated linear gain equalizer has a loss of more than -5dB at 40GHz and a 6dB slope in the 18 ~ 40GHz band. By using the manufactured gain equalizer in a multi-stage connected device such as an electronic warfare receiver, the gain flatness degradation with increasing frequency can be reduced.

• Korean Journal of Environmental Agriculture
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• v.29 no.3
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• pp.266-272
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• 2010

The present study was carried out to assess exposure & risk for Korean by total and inorganic As intake through agricultural products. Total arsenic analysis was performed using microwave device and ICP-MS. 50% MeOH extraction and anion-exchange HPLC-ICP-MS method has been used to determine arsenic species. 329 samples covering 20 kinds of agricultural products were collected from various retail outlets and markets across Korea. The concentration of total As was in the range of 0.001~0.718 mg/kg, while inorganic and organic arsenic species in all samples was not determined. For risk assessment, probable daily intake was calculated and compared with provisional tolerable weekly intake (PTWI, 15 ${\mu}g$/kg b.w./week for inorganic arsenic) established by JECFA. The median daily exposure to total and inorganic As by intake of agricultural products except rice was ranged 0.0002~0.012, 0.0001~0.001 ${\mu}g$/kg b.w./day, corresponding to 0.01~0.5%, 0.002~0.1% of PTWI, respectively. The median level of total and inorganic As intake through rice was 0.603 and 0.041 ${\mu}g$/kg b.w./day, and 28.1% and 1.9% of PTWI, respectively. Therefore, the level of overall exposure to arsenic for Korean through agricultural products was below the recommended JECFA levels, indicating of least possibility of risk.