• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.384-388
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• 2002

X-band(8-12㎓)에서 50W의 고출력을 내는 진행파관 증폭기를 설계하고 제작하여 측정하였다. 본 연구에서는 전자빔과 전자파가 상호작용을 일으키는 Interaction Circuit을 나선형구조로 구성하였고 저속파구조의 분산특성을 얻기 위해 Sheath helix 모델링 이론을 적용하였고 HFSS(High Frequency Structure Simulator) Code를 사용해 분산특성을 얻었으며 이를 바탕으로 제작하여 측정하였다. 또한 2D-MAGIC Code를 통해 전파 빔과 전자파와의 상호작용관계와 증폭기의 성능을 예측하였다. 시뮬레이션 결과 포화입력전력 100 mW를 넣었을 때 10㎓에서 43W의 출력전력과 26㏈의 이득을 얻을 수 있었으며 측정을 통해 입력전력 30mw일 때 8W의 출력, 24㏈의 이득을 얻을 수 있었다.

• Journal of Advanced Marine Engineering and Technology
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• 제31권6호
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• pp.777-783
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• 2007

In this work, a highly integrated downconverter MMIC employing HBT(heterojunction bipolar transistor) was developed for application to one chip tranceiver solution of Ku-band commercial wireless communication system. The downconverter MMIC (monolithic microwave integrated circuit) includes mixer filter. amplifier and input/output matching circuit. Especially, spiral inductor structures employing SiN film were used for a suppression of LO and its second harmonic leakage signals. Concretely, they were properly designed so that the self-resonance frequency was accurately tuned to LO and its second harmonic frequency, and they were integrated on the downconverter MMIC.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2010년도 하계학술대회 논문집
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• pp.256-258
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• 2010

MPM(Microwave Power Module)은 진공 전력증폭기인 진행파관(TWT,Traveling Wave Tube)과 반도체 전력증폭기(SSA, Solid State Amplifier)를 결합한 구조로서, 미세한 RF신호를 입력 받아 고출력의 RF 신호로 증폭하는 장치이다. 본 논문은 MPM을 구동하기 위해, 필요한 수 kV이상의 높은 전압을 TWT에 공급해주는 고전압 전원공급기(HVPS, High Voltage Power Supply)에 관한 것이다. Main Topology는 Resonant Phase Shift Full Bridge Converter이며, 승압의 효과를 높이기 위해 2차 측에는 Voltage Multiplier를 사용하였다. MPM을 구동하는데 필요한 전압인Cathode(-4kV), FE_Bias(-5.25kV), Collector(-2kV)를 생성하며, FE_ON, OFF신호에 따라 고전압 스위칭 동작을 하여, RF 증폭을 제어 할 수 있다. 최종적으로 Prototype을 제작하고, 고찰된 실험결과를 제시하여 개발된 HVPS의 우수성을 검증한다.

• Journal of electromagnetic engineering and science
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• 제1권1호
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• pp.83-87
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• 2001

Many communication systems require bandpass filters with sharp skirt frequency characteristics in order to avoid the interferencce, which results in more order in the filter design. However, because of the limited Q values bandpass filters made of small sized ceramic resonators suffer from relatively large ripples at the band edges as the order of the filter increases. In order to compensate the large ripples while maintaining the sharp skirt frequency we propose a new RF amplitude equalizer. The equalizer made of two pole bandpass filter and an amplifier whose amplitude characteristics are the reverse of those of the bandapss filter. At the cellular band 9-pole bandpass filter with 10 MHz bandwidth exhibits 3 dB ripple when 8mm*8mm ceramic coaxial resonators are used. We added the RF equalizer to this filter and the flatness is improved as less than 1 dB.

• 한국통신학회논문지
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• 제22권8호
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• pp.1622-1631
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• 1997

A 3-stages Active Microstrip Phased Array Antenn(AMPAA) is implemented using Injection-Locking Coupled Oscillators(ILCO). The AMPAA is a beam scanning active antenna with capability of electrical scanning by frequency varation of ILCO. The synchronization of resonance frequencies in array elements is occured by ILCO, and the ILCO amplifies the injection signal and functions as a phase shifter. The microstrip ptch is operated as a radiation element. The unilateral amplifier is a mutual coupling element of AMPAA, eliminates the reverse locking signal and controls the locking bandwidth of ILCO. The possibility of Monolithic Microwave Integrated Circuits(MMIC) of T/R module is proposed by simplified and integrated fabrication process of AMPAA. The 0.75.$lambda_{0}$ is fixed for a mutual coupling space to wide the scanning angle and minimize the multi-mode. The AMPAA has beam scanning angle of 31.4.deg., HPBW(Half Power Beam Widths) of 26.deg., directive gain of 13.64dB and side lobe of -16.5dB were measured, respectively.

• International journal of advanced smart convergence
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• 제11권2호
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• pp.53-58
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• 2022

In this paper, w-band frequency synthesizer was developed for frequency-modulated continuous wave (FMCW) radar sensors. To achieve a small size and high performance, We designed and manufactured w-band MMIC chips such as up-converter one-chip, multiplier, DA (Drive Amplifier) MMIC(Monolithic Microwave Integrated Circuit), etc. And interposer technology was applied between the W-band multiplier and the DA MMIC chip. As a result, the measured phase noise was -106.10 dBc@1MHz offset, and the frequency switching time of the frequency synthesizer was less than 0.1 usec. Compared with the w-band frequency synthesizer using purchased chips, the developed frequency synthesizer showed better performance.

• 대한전자공학회논문지
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• 제24권3호
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• pp.413-419
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• 1987

In this paper, self-oscillating mixer is designed by small signal S-parameter and series feedback circuit. The input-output matching circuit is accomplished from double stub and additional matching stub. The self-oscillating mixer is oscillating itself and amplifies without any external local oscillator and an intermediate frequency amplifier, so it has advantages in its economical and system simplification. The experimental results show the maximum conversion gain 1.5d B and the noise figure 6.5d B at RF center frequency 4GHz and IF 1.1GHz` output oscillating power 4d Bm, efficiency 13.4%, stability -10MHz/V and -0.5MHz/\ulcornerC at oscillating frequency 5.1GHz.The rejection band loss characteristics in band pass filter and low pass filter are -40d B and -30d B, respectively.

• 전자공학회논문지D
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• 제36D권1호
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• pp.8-14
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• 1999

고주파에서 사용되는 능동소자들은 입력전력의 세기에 의하여 위상변화량이 달라지게 된다. 특히 증폭기에 사용되는 트랜지스터는 효율을 고려하여 포화영역 근처에서 사용하게 되면, 입력전력의 변화에 따른 위상 변화량이 크게 나타난다. 본 연구는 능동소자를 통과할 때 발생하는 위상변화량을 고정시키는 회로에 관한 것이다. 회로내의 임의의 가변 위상 벼노한기를 이용하여 위상을 변화시킬 시, 입력부에서 커플링 한 기준신호의 위상과 출력부의 비교신호의 위상을 비교하여 회로내의 또 다른 자동 위상 변환기를 동작하여 자동적으로 고정된 위상 변화량을 가진 신호가 출력되는 회로를 제작하였다. 약 10dB 동작 범위에서 위상이 고정됨과 2개 이상의 신호 입력과 FM 신호 입력시에도 전체회로를 통한 위상 변화량이 측정되고 또한 고정될 수 있음을 확인하였다. 실험주파수는 1960 MHz이고, 실험 기판은 두께가 31mil이고 비유전율 3.2인 테플론을 이용하였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.61-64
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• 2002

We have optimally designed and implemented by a monolithic microwave integrated circuit(MMIC) the low noise amplifier(LNA) of 5.8GHz band composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication using a depletion-mode GaAs MESFET. The LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18㎃, The gain at center frequency 5.8GHz is 13.4dB, Noise figure(NF) is 1.94dB, Input 3rd order intercept point(lIPS) is 3dBm, and Input return loss(5$_{11}$) and Output return loss(S$_{22}$) is -l8dB and -13.3dB, respectively. The circuit size is 1.2$\times$O.7$\textrm{mm}^2$.EX>.>.

• 전자통신동향분석
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• 제36권3호
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.