• Journal of the Semiconductor & Display Technology
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• v.3 no.3
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• pp.45-50
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• 2004

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.231-234
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• 2000

Vertically aligned carbon nanotubes were synthesized on Ni-coated Si substrates using microwave plasma-enhanced chemical vapor deposition. The grain size of Ni thin films was varied with the RF power density during the RF magnetron sputtering process. It was found that the diameter, growth rate, and density of carbon nanotubes could be controlled systematically by the grain size of Ni thin films. With decreasing the grain size of Ni thin films, the diameter of the nanotubes decreased, whereas the growth rate and density increased. High-resolution transmission electron microscope images clearly demonstrated synthesized nanotubes to be multiwalled. The number of graphitized wall decreased with decreasing the diameter. Field emission properties will be further presented.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.20-24
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• 2006

Iridium-catalyzed carbon nanofilaments were formed on MgO substrate as a function of the gap between the substrate and the plasma using microwave plasma-enhanced chemical vapor deposition method. Under the remote plasma condition, carbon nanofibers were formed on the substrate. Under the adjacent plasma condition, on the other hand, carbon nanotubes-like materials instead of carbon nanofibers could be formed. When the substrate immersed into the plasma, any carbon nanofilaments formation couldn't be observed. During the reaction, the substrate temperatures were measured as a function of the gap. Based on these results, the cause for the different carbon nanofilaments formation according to the gap was discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.373-376
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• 1997

Diamond thin films were deposited on P-type(100) Si wafers using MPECVD. Prior to deposition, mechanical scretching was done to improve density of nucleation sites with diamond paste of 0.25${\mu}{\textrm}{m}$ size. Diamond films were deposited under the following conditions : methane concentration of 0.5~5%, oxygen concentration of 0~70%, process pressure of 70Torr, process temperature of 900~95$0^{\circ}C$, and deposition time 5hrs. The changes of the morphology and the growth rates of the deposits with the experimental conditions are expriend by Scanning Electron Microscopy. Raman Spectroscopy and X-ray Diffraction method.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1150-1153
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• 2003

Carbon nanofilaments were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition method. The structures of carbon nanofilaments were identified as carbon nanotubes or carbon nanofibers. The formation of bamboo-like carbon nanotubes was initiated by the application of the bias voltage during the plasma reaction. The growth kinetics of bamboo-like carbon nanotubes increased with increasing the bias voltage. The growth direction of bamboo-like carbon nanotubes was vertical to the substrate.

• Journal of the Korean Vacuum Society
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• v.1 no.2
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• pp.277-285
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• 1992

플라즈마 화학기상증착법과 저압 화학기상증착법을 사용하여 실리콘 기판 위에 텅 스텐 박막을 증착하였다. 반응기체로 WF6를 사용하였으며 환원기체로는 SiH4를 사용하였다. 플라즈마 증착법에 의한 텅스텐 박막의 성장은 환원기체의 유무에 상관없이 주로 기상 반응 에 의한 텅스텐 덩어리들의 증착에 의하여 이루어졌으며 비교적 균일도가 낮은 박막표면을 이루었다. 저압 화학증착법의 경우 환원기체를 사용하지 않았을 때에는 실리콘 기판에 의한 제한된 환원반응에 의해 텅스텐이 증착되었으나, 환원기체를 사용했을 때에는 초기의 실리 콘 기판에 의한 환원반응과 이어 일어나는 SiH4 기체와의 불균일계 환원반응의 두 단계반응 에 의하여 텅스텐 박막 증착이 이루어졌다. 저압 화학증착법의 경우 텅스텐 박막의 특성은 플라즈마 증착법에서 보다 우수하였으며 박막 성장은 island by island 양식을 따르는 것으 로 추정되었다. 박막은 $\alpha$-W의 체심입방 구조로 이루어졌으며 박막이 성장함에 따라 단결정 구조가 증가하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.311-316
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• 2002

Two different approaches, namely two-step deposition process and Bias-Enhanced Nucleation (BEN) technique have been examined for deposition of high quality diamond thin film on polycrystalline Ni which has low chemical activity with the carbon neutrals provided from the $CH_4/H_2$mixtures. A two-step deposition process, consisted of pre-deposition of soot layer at lower temperatures and subsequent deposition at higher temperature condition, has been developed to deposit diamond layer directly on Ni substrate. Diamond particles were observed after deposition step at $925^{\circ}C$ for 5 hours and those particles seem to be nucleated from the soot layer pre-deposited at lower temperatures ($810^{\circ}C$). Diamond particles of a substantial size were found on Ni substrate after biasing -220 V for 10 minutes and subsequent deposition for 2 hours while no diamond particles were observed under the conditions without applied bias.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.240-248
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• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CH_4/H_2$ gas flow ratio, total, gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. It is introduced how the real-time spectroscopic ellipsometry is used and the data are analyzed with the view of getting the growth condition and the accompanied features for a good quality of diamond films. And it is determined the important parameters during the diamond film growth, which include the final sample will be measured with Raman spectroscopy to confirm the diamond component included in the film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.289-292
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• 1998

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including CH$_4$ concentrations, Oxygen additions, Operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. The best crystallinity of the finn at 3% methane concentration addition of oxygen to the CH$_4$-$H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure and time, the growth rate and crystallinity were increased simultaneously.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.217-220
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• 2014

Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increase the reaction area of graphite electrodes. In this study, we have investigated the growth properties of carbon nanowall (CNW) according to the ingredient of gas. Microwave plasma enhanced chemical vapor deposition (MPECVD) system was used to grow CNW on Si substrate with a variety of the reaction gas. The planar and vertical growth conditions of the grown CNWs according to the ingredient of the gas were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The electrical characteristics of CNWs were analyzed using a 4-point probe.