• 한국표면공학회지
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• 제29권5호
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• pp.549-555
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• 1996

Diamond Like Carbon film is amorphous film which is considered to consist of three coordinate graphite structure and tetrahedron coordinate diamond structure. Its hardness, thermal conductivity and chemical stability are nearly to one of diamond. It is well known to become semi-conductor by doping of inpurity. In this study Diamond Like Carbon film was synthesized by Microwave Plasma CVD in the gas mixture of hydrogen-methan-nitrogen and doped of nitrogen on the single-crystal silicon or silica glass. The temperature of substrate and nitrogen concentration in the gas mixture had an effect on the bonding state, structural properties and conduction mechanism. The surface morphology was observed by Scanning Electron Microscope. The strucure was analyzed by laser Raman spectrometry. The bonding state was evaluated by electron spectroscopy. Diamond Like Carbon film synthesized was amorphous carbon containing the $sp^2$ and $sp^3$ carbon cluster. The number of $sp^2$ bonding increased as nitrogen concentration increased from 0 to 40 vol% in the feed gas at 1233K substrate temperature and at $7.4\times10^3$ Pa. Increase of nitrogen concentration made Diamond Like Carbon to be amorphous and the doze of nitragen could be controlled by nitrogen concentration of feed gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.189-190
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• 2005

본 논문에서는 탄소나노튜브를 성장시키기 전 과정인 전처리시 촉매 층에 인가되는 마이크로웨이브 파워에 따른 탄소나노튜브의 성장 및 특성 변화를 관찰하였다. 촉매층으로 사용되는 Ni층과 adhesion층으로 사용되는 Ti층은 마그네트론 스퍼터링 방식으로 증착하였고, 탄소나노튜브 성장에는 마이크로웨이브 플라즈마 화학기상 증착기를 사용하였다 탄소나노튜브의 성장특성은 평면과 단면 SEM image를 통하여 관찰하였으며, Raman spectrometer 분석을 통하여 성장된 탄소나노튜브의 구조적 특성을 알아보았다.

• 대한화학회지
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• 제36권2호
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• pp.238-242
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• 1992

수용액내의 염소원소를 산을 이용하여 휘발성인 HCl이나 염소기체로 바꾼 뒤 중급출력(500W) 헬륨 마이크로파 유도 플라즈마를 이용하여 분석하였다. 최적 조건들을 구한 후 시료용액을 분석한 결과 검출한계는 4.3ppm으로서 용액을 직접분석하였을 때보다 10배 정도 더 민감하였다. 회분법 대신 연속적으로 분석하는 방법에 대해서도 연구하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.148-148
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• 2012

A cutoff probe is the novel diagnostic method to get the absolute plasma density with simple system and less assumption. However, high density of ion flux from plasma on probe tip can make the error of plasma density measurement because the dielectric material of probe tip can be damaged by ion flux. We proposed a shielded cutoff probe using the ceramic tube for protection from ion flux. The ceramic tube on probe tip can intercept the ion flux from plasma. The transmitted spectrum using the shielded cutoff probe is good agreement with E/M wave simulation result (CST Microwave Studio) and previous circuit simulation of cutoff probe [1]. From the analysis of the measured transmitted spectrum base on the circuit modeling, the parallel resonance frequency is same as the unshielded cutoff probe case. The obtained results of electron density is presented and discussed in wide range of experimental conditions, together with comparison result with previous cutoff method.

• 한국진공학회지
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• 제9권1호
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.247.1-247.1
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• 2014

The capacitive coupled plasma is used widely in the semiconductor industries. Especially, the uniformity of the industrial plasma is heavily related with defect ratio of devices. Therefore, the industries need the capacitive coupled plasma source which can generate the uniform plasma and control the plasma's uniformity. To achieving the uniformity of the large area plasma, we designed multi-powered electrodes. We controlled the uniformity by controlling the power of each electrode. After this work, we started to research another concept of the plasma device. We make the plasma chamber that has multi-ground electrodes imaginary (CST microwave studio) and simulate the electric field. The shape of the multi-ground electrodes is ring type, and it is same as the shape of the multi-power electrodes that we researched before. The diameter of the side electrode's edge is 300mm. We assumed that the plasma uniformity is related with the impedance of ground electrodes. Therefore we simulated the imaginary chamber in three cases. First, we connected L (inductor) and C (capacitor) at the center of multi-ground electrodes. Second, we changed electric conductivity of multi-ground electrode. Third, we changed the insulator's thickness between the center ground electrode and the side ground electrode. The driving frequency is 2, 13.56 and 100 MHz. We switched our multi-powered electrode system to multi-ground electrode system. After switching, we measured the plasma uniformity after installing a variable vacuum capacitor at the ground line. We investigate the effect of ground electrodes' impedance to plasma uniformity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.212-215
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• 1996

This paper focuses the strength and wear resistance of CVD diamond films. The strength of free-standing CVD diamond films synthesized by microwave plasm CVD, DC plasma CVD, RF plasma CVD and arc discharge plasma jet CVD has been measured by three-point bending test. The wear resistance of CVD diamod films has been evaluated by the pin-on-disk type testing. diamond films coated on the base of sintered tungsten carbide pin by hot filament CVD have been rubbed with a sintered diamond disk in muddy water. Volume removed wear of CVD diamond has been compared with stellite, WC alloy and bearing steel.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.855-858
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• 2003

Carbon nanotubes (CNTs) were grown on Ni-coated TiN/Si substrate by microwave plasma chemical vapor deposition using mixture gas of $H_2/CH_4$ at low temperature of 500 $^{\circ}C$. Average diameter of CNTs could be easily controlled by $H_2$ plasma pretreatment time before CNTs growth. The turn-on voltages of CNT emitters were varied from 3.5 $V/{\mu}m$ to 9 $V/{\mu}m$ according to the hydrogen pretreatment conditions. The close relationship between electron emission characteristics and pretreatment time indicates that pretreatment condition can be a key process parameter in CNTs growth for field emission displays..

• ETRI Journal
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• 제17권2호
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• pp.11-19
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• 1995

The plasma densities generated from a semiconductor bridge (SCB) device employing a capacitor discharge firing set have been measured by a novel diagnostic technique employing a microwave resonator probe. The spatial resolution of the probe is comparable to the separation between the two wires of the transmission lines (${\approx}$3 mm). This method is superior to Langmuir probes in this application because Langmuir probe measurements are affected by sheath effects, small bridge area, and unknown fraction of multiple ions. Measured electron densities are related to the land material and input energy. Although electron densities in the plasma generated by aluminum or tungsten-land SCB devices show a general tendency to increase steadily with power, at the higher energies, the electron densities generated from tungsten-land SCB devices are found to remain constant.