• Title/Summary/Keyword: Microtwins

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Characterization of Defects in a Synthesized Crystal of Sapphire $({\alpha}-Al_2O_3)$ by TEM (투과전자현미경 조사에 의한 사파이어 $({\alpha}-Al_2O_3)$합성 결정내의 결함특성 분석)

  • Kim, Hwang-Su;Song, Se-Ahn
    • Applied Microscopy
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    • v.36 no.3
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    • pp.155-163
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    • 2006
  • The defects in a synthesized crystal of ${\alpha}-Al_2O_3$ used as substrate for growing of semi-conductor materials such as GaN were examined by the conventional transmission electron microscopy (TEM), Large Angle CBED and High-Angle Annular Dark Field (HAADF) STEM methods. The dominant defects found in the specimen are basal microtwins with the thickness of ${\sim}2\;to\;32 nm$ and the associated strong strain field at the interface of microtwin/matrix, basal dislocations and complex dislocations in the one of {$2\bar{1}\bar{1}3$} pyramidal slip plane. All these basal and pyramidal dislocations seem to be strong related to basal microtwins. It was also found that the density of defects is very uneven. In the certain area with the dimension of a few fm, the dislocation density is quite high as an order of ${/sim}10^{10}/cm^2, but the average density is roughly estimated to be less than ${\sim}10^5/cm^2, as is usually expected in general synthesized crystals.

Three-dimensional TEM Characterization of Highly Oriented Diamond Films on a (100) Silicon Substrate

  • Seung Joon Jeon;Arun Kymar Chawla;Young Joon Baik;Changmo Sung
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.155-158
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    • 1997
  • Highly oriented diamond films were deposited on a (100) silicon substrate by bias enhanced nucleation technique. Both plan-view and cross-section TEM were applied to study the nucleation and growth mechanism of diamond grains. Randomly oriented polycrystalline diamond grains with internal microtwins were observed at the nucleation stage while defect free regions were retained at the growth stage and were apparently related with the epitaxy of diamond films. From our experimental results, the nucleation and texture formation mechanism of diamond films is discussed.

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Microstructure and Polytype of in situ-Toughened Silicon Carbide

  • Young Wook Kim;Mamoru Mitomo;Hideki Hirotsuru
    • The Korean Journal of Ceramics
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    • v.2 no.3
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    • pp.152-156
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    • 1996
  • Fine (~0.09 $\mu$m) $\beta$-SiC Powders with 3.3wt% of large (~0.44$\mu$m) $\alpha$-SiC of $\beta$-SiC particles (seeds) added were hotpressed at 175$0^{\circ}C$ using $Y_2O_3$, $Al_2O_3$ and CaO as sintering aids and then annealed at 185$0^{\circ}C$ for 4 h to enhance grain growth. The resultant microstructure and polytypes were analyzed by high resolution electron microscopy (HREM).Growth of $\beta$-SiC with high density of microtwins and formation of ${\alpha}/{\beta}$ composite grains consisting of $\alpha$-SiC domain sandwiched between $\beta$-SiC domains were found in both specimens. When large $\alpha$-SiC (mostly 6H) seeds were added, the $\beta$-SiC transformend preferentially to the 6H polytype. In contrast, when large $\beta$-SiC (3C) seeds were added, the fine $\beta$-SiC transformed preferentially to the 4H polytype. Such results suggested that the polytype formation in SiC was influenced by crystalline form of seeds added as well as the chemistry of sintering aids. The ${\alpha}/{\beta}$ interface played and important role in the formation of elongated grains as evidenced by presence of ${\alpha}/{\beta}$ composite grains with high aspect ratio.

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Single crystals growth and properties of $LiNbO_{3}$ doped with MgO or ZnO : (I) Single crystals growth and their defect structure (MgO 또는 ZnO를 첨가한 $LiNbO_{3}$ 단결정 성장 및 특성 : (I) 단결정 성장 및 결함구조)

  • Cho, Hyun;Shim, Kwang-Bo;Auh, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.3
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    • pp.368-376
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    • 1996
  • $LiNbO_{3}$ single crystals (undoped, 5 mol% MgO-doped and 5 mol% ZnO-doped) were grown by the floating zone method which has the characteristics of a compositional homogeneity and uniform distribution of the dopants. The optimum growth condition was established experimentally and the defect structures such as domain structure, dislocation structure, slip band, and microtwins were characterized using a microscopic method.

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Microstructural Evolution of Cu-15 wt%Ag Composites Processed by Equal Channel Angular Pressing (등통로각압축공정을 이용하여 제조된 Cu-15 wt%Ag 복합재의 미세구조)

  • Lee, In Ho;Hong, Sun Ig;Lee, Kap Ho
    • Korean Journal of Metals and Materials
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    • v.50 no.12
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    • pp.931-937
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    • 2012
  • The microstructure of Cu-15 wt%Ag composites fabricated by equal channel angular pressing (ECAP) with intermediate heat treatment at $320^{\circ}C$ was investigated by transmission electron microscopy (TEM) observations. Ag precipitates with a thickness of 20-40 nm were observed in the eutectic region of the Cu-15 wt%Ag composite solution treated at $700^{\circ}C$ before ECAP. The Cu matrix and Ag precipitates had a cube on cube orientation relationship. ECAPed composites exhibited ultrafine-grained microstructures with the shape and distribution dependent on the processing routes. For route A in which the sample was pressed without rotation between each pass, the Cu and Ag grains were elongated along the shear direction and many micro-twins were observed in elongated Cu grains as well as in Ag filaments. The steps were observed on coherent twin boundaries in Cu grains. For route Bc in which the sample was rotated by 90 degrees after each pass, a subgrain structure with misorientation of 2-4 degree by fragmentation of the large Cu grains were observed. For route C in which the sample was rotated by 180 degrees after each pass, the microstructure was similar to that of the route A sample. However, the thickness of the elongated grains along the shear direction was wider than that of the route A sample and the twin density was lower than the route A sample. It was found that more microtwins were formed in ECAPed Cu-15 wt%Ag than in the drawn sample. Grain boundaries were observed in relatively thick and long Ag filaments in Cu-15 wt%Ag ECAPed by route C, indicating the multi-crystalline nature of Ag filaments.