• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.88-92
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• 2003

본 논문에서는 Al 하부전극 상에서 RF magnetron sputtering 기술을 이용한 ZnO 박막 증착 및 공정온도가 ZnO 결정성장에 미치는 영향을 고려하여 제작한 FBAR 소자에 대한 연구를 발표한다. 결과적으로, 20$0^{\circ}C$의 공정온도에서 주상형 결정립(columnar grain)을 가지고 c축 우선 배향된 ZnO 박막을 얻을 수 있었다. 이렇게 얻은 ZnO 박막을 FBAR 소자에 적용하여 제작한 결과, 2.05GHz의 공진 주파수에서 ~19.5dB의 반사손실을 보였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.113.1-113.1
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• 2011

PEMS (printed electro-mechanical system) is fabricated by means of various printing technologies. Passive and active compo-nents in 2D or 3D such as conducting lines, resistors, capacitors, inductors and TFT(Thin Film Transistor), which are printed withfunctional materials, can be classified in this category. And the issue of PEMS is applied to a R2R process in the manu-facturing process. In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem, it is difficult to apply to a continuous process such as a R2R(roll to roll) printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, an electrostatic atomizer sprays micro-drops from the solution injected into the capillary with electrostatic force generated by electric potential of about several tens kV. ESD method is usable in the thin film coating process of organic materials and continuous process as a R2R manufacturing process. Therefore, we experiment the thin films forming of PEDOT:PSS layer and active layer which consist of the P3HT:PCBM. The organic solar cell based on a P3HT/PCBM active layer and a PEDOT:PSS electron blocking layer prepared from ESD method shows solar-to-electrical conversion efficiency of 1.42% at AM 1.5G 1sun light illumination, while 1.86% efficiency is observed when the ESD deposition of P3HT/PCBM is performed on a spin-coated PEDOT:PSS layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.913-918
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• 2005

It is expected that the inkjet technology offers prospect for reliable and low cost manufacturing of FPD (Flat Panel Display). This inkjet technology also offers a more simplified manufacturing process for various part of the FPD than conventional process. For example, recently the novel manufacturing processes of color filter (C/F) in LCD, or RGB patterning in OLED by inkjet printing method have been developed. This elaborates will be considered as the precious point of manufacturing process for the mass production of enlarged-display panel with a low price. On this point of view, we would like to review the status of inkjet technology in FPD, with some results on forming micro line by inkjet patterning of suspension type silver nano ink as below. We have studied the inkjet patterning of synthesized aqueous silver nano-sol on interface-controlled ITO glass substrate. Furthermore, we designed the conductive ink for direct inkjet patterning on bare ITO glass substrate. The first, the highly concentrated polymeric dispersant-assisted silver nano sol was prepared. The high concentration of batch-synthesized silver nano sol was possible to 40 wt%. At the same time the particle size of silver nanoparticles was below $10{\sim}20nm$. The second, the synthesized silver nano sol was inkjet - patterned on ITO glass substrate. The connectivity and width of fine line depended largely on the wettability of silver nano sol on ITO glass substrate, which was controlled by surfactant. The relationship was understood by wetting angle. The line of silver electrode as fine as $50{\sim}100\;{\mu}m$ was successfully formed on ITO glass substrate. The last, the direct inkjet-patternable silver nano sol on bare ITO glass substrate was designed also.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.784-789
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• 2004

Bulk ZnO varistor based on Matsuoka, which varied $SiO_2$ addition has fabricated by standard ceramic process. The micro-electrode, which fabricated for investigation on degradation property of the Single Grain Boundary of ZnO varistor, has sticked by lithography semiconductor process. The values of AC degradation has measured with 150% operating voltage in varistor threshold with 120 minute in 60Hz. In here we observed V-I and V-C property in every 30minute. The operating voltage of Single Grain Boundary has shown in variable patterns in the characteristic of V-I Property. By increasing the $SiO_2$ contents, operating value has also increased and dominated on degradation proper. In EPMA analysis, we know that added $SiO_2$ was nearly distributed at the Grain Boundary. $SiO_2$ has gradually distributed in Grain Boundary condition during the process of crystal growth. It contributes to degradation depression and decision of operating voltage. We also demonstrated for using practical application and performance on distribution random loop based on V-I Properties in Single-Grain-Boundary.

• Journal of Electrochemical Science and Technology
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• 제5권1호
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• pp.1-18
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• 2014

Li-air cell is an exotic type of energy storage and conversion device considered to be half battery and half fuel cell. Its successful commercialization highly depends on the timely development of key components. Among these key components, the catalyst (i.e., the core portion of the air electrode) is of critical importance and of the upmost priority. Indeed, it is expected that these catalysts will have a direct and dramatic impact on the Li-air cell's performance by reducing overpotentials, as well as by enhancing the overall capacity and cycle life of Li-air cells. Unfortunately, the technological advancement related to catalysts is sluggish at present. Based on the insights gained from this review, this sluggishness is due to challenges in both the commercialization of the catalyst, and the fundamental studies pertaining to its development. Challenges in the commercialization of the catalyst can be summarized as 1) the identification of superior materials for Li-air cell catalysts, 2) the development of fundamental, material-based assessments for potential catalyst materials, 3) the achievement of a reduction in both cost and time concerning the design of the Li-air cell catalysts. As for the challenges concerning the fundamental studies of Li-air cell catalysts, they are 1) the development of experimental techniques for determining both the nano and micro structure of catalysts, 2) the attainment of both repeatable and verifiable experimental characteristics of catalyst degradation, 3) the development of the predictive capability pertaining to the performance of the catalyst using fundamental material properties. Therefore, under the current circumstances, it is going to be an extremely daunting task to develop appropriate catalysts for the commercialization of Li-air batteries; at least within the foreseeable future. Regardless, nano materials are expected to play a crucial role in this field.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.62-67
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• 2012

Owing to the rapid growth of mobile and electronic equipment miniaturization technology, the supply of micro mobile computing machine has been fast raised. Accordingly they have performed many researches on energy harvesting technology to provide promising power supply equipment to substitute existing batteries. In this paper, in order to have low resonance frequency for piezoelectric energy harvester, we have tried to make it larger than before by adopting nickel that has much higher density than silicon. We have applied it for our energy harvesting actuator instead of the existing silicon based actuator. Through such new concept and approach, we have designed energy harvesting device and made it personally by making with micromachining process. The energy harvester structure has a cantilever type and has a dimension of $10{\times}2.5{\times}0.1\;mm^3$ for length, width and thickness respectively. Its electrode type is formed by using Au/Ti of interdigitate d33 mode. The pattern size and gap size is 50 ${\mu}m$. Based on the measurement of the nickel-based piezoelectric energy harvester, it is found to have 778 Hz for a resonant frequency with no proof mass. In that resonance frequency we could get a maximum output power of 76 ${\mu}W$ at 4.8 $M{\Omega}$ being applied with 1 g acceleration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• The Korean Journal of Physiology
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• 제19권2호
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• pp.101-111
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• 1985

Transient inward current (TI) was studied by the two micro-electrode voltage clamp technique in the sinoatrial node of the rabbit. The author confirmed that in $10^{-6}$ M ouabain TI was found in the SA node and investigated the effects of ions, $(Na^+,\;K^+,\;Ca^{2+})$, $\beta-agonist$ (isoprenaline), local anesthetics (quinidine, lidocaine) and Ca-blockers ($Co^{2+}$, verapamil, diltiazem) on the TI recorded during depolarizing voltage clamp pulses to -40 and -20 mV. The results obtained were as follows ; 1) $10^{-6}M$ ouabain increased the frequency of sinus action potential and decreased the amplitude, especially overshoot of action potential. TI was induced by the depolarizing voltage clamp Pulses and the magnitude of the slow inward current (isi) decreased and the time course was slowed by the same depolarizing pulses. 2) 30% $Na^{+}$ and 24mM $K^+$ decreased by $10^{-6}M$ ouabain and 6 mM $Ca^{2+}$ and $10^{-7}M$ isoprenaline increased TI, $i_{si}$ and current oscillations. 3) Quinidine $(5\times10^{-7}M)$ reduced TI and $i_{si}$ but lidocaine $(10^6\;-10^5M)$ didn't reduced or increase TI. Current oscillations increased and isi decreased by lidocaine. 4) Ca-blockers decreased the amplitude and the frequency of sinus action potential. TI and $i_{si}$ decreased significantly but were not abolished completely at the concentrations used in this experiment. Verapamil and diltiazem had inhibitory action on TI in $2\times10^{-7}M$ concentration and showed very slow recovery after wasting out with normal Tyrode solution.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.87-91
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• 2010

Charged micro-particles are widely used as the key components for many electrical applications such as an e-paper, a touch panel, a printer toner and an electronic ink. Among them, the e-paper is an emerging reflective type display using the charged particles that has the advantages of the extremely low power consumption and sunlight readability. To create images on the e-paper, we confine black positively-charged and white negatively-charged particles between bottom and top electrodes and selectively apply the electric field. When the Coulomb force by an applied electric field is greater than the adhesion force between the charged particle and the electrode, the particles' transition happens resulting in the change of color between black and white. Therefore, the adhesion force is a very important factor for designing and estimating e-paper's operation. In this study, we constructed a basic model for particle's transition and an adhesion force equation describing particle's transition with three different forces: electrostatic image force, Van der Waals force and gravitational force. The simulation results showed that the gravitational force is negligible for the interesting range for the charge and the radius, and the adhesion force can be strongly dependent on the particle's charge and radius.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.423-429
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• 2002

RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.