• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• 한국축산시설환경학회지
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• 제8권3호
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• pp.199-208
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• 2002

본 연구에서는 실험을 통해 PLC와 하부장치들 사이에 RS -485 직렬 통신방식의 네트웍을 이용한 정보 교환에 있어 잡음 손실이나 왜곡현상이 매우 낮다는 것을 보였다. 제시한 네트웍 방법과 알고리즘에 의해 동작하는 PLC의 효율과 작업 능력을 기반으로 작업장을 분화하여 필요한 작업을 배치한 방법은 매우 효과적이고 편리하며 유용한 정보를 제공하였다. 보다 정확한 정보의 축척과 높은 효율을 위해 본 실험에서 제시한 알고리즘과 운용방법을 각 목장에 활용할 때에는 사용자나 관리자의 요구에 따라 데이터를 통한 계측장비의 교정과 함께 수정이 필요하겠다. 하지만 무엇보다 PLC를 이용한 축산자동화를 통해 사양관리에 필요한 생체 계측 정보를 착유와 동시에 자동으로 다량 획득하여 데이터 전자 문서파일로 보관함으로서, 긴 시간의 지연 없이 사양관리 감독자에게 제공할 수 있는 방법적 해결에 유용성과 신속성을 보였고 사용자나 관리자가 필요한 작업을 수행할 때에 매일 반복적인 작업에 대한 보조적 역할을 하거나 착유 시설과 급이 시설에 완전한 자동화 무인화를 위한 보조적 장비로서 필요한 시설과 정보를 제공하는 것이 가능함을 확인하였다.