• Journal of Korea Foundry Society
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• v.5 no.2
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• pp.118-124
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• 1985

The thickness ranges and conditions to form the supersaturated solid solution in Al-Cr alloys were investigated with various rapid solidification conditions. Al-Cr alloys, rapidly solidified by using the small droplet chill quenching method, were examined by means of micro-vickers hardness, lattice parameter, thermal analysis and microscopic observation. The results obtained were as follows; 1. With the increase of solidification rate, the solidified structures were changed to intermetallic compound + solid solution, incompletely supersaturated solid solution, completely supersaturated solid solution, in turn. 2. The minimum solidification rate required to form completely supersaturated solid solution was $2.5{\times}10^{-2}cm/sec$, $3.6{\times}10^{-2}cm/sec$ and $6.0{\times}10^{-2}cm/sec$ for Al-1.0wt%Cr, Al-1,2wt%Cr and Al-1.5wt%Cr, respectively. 3. The maximum distance from the chill surface required to form completely supersaturated solid solution was 5mm, 1.3mm and 0.3mm for Al-1.0wt%Cr, Al-1.2wt%Cr and Al-1.5wt% Cr, respectively.

• Advances in nano research
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• v.3 no.2
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• pp.81-96
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• 2015

Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of $In_2O_3$ structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of $In_2O_3$ nano-/microcrystals. The single crystalline Ga-doped, $In_2O_3$ nano-/microcrystals with low defect contents are promising for optoelectronic applications.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.718-723
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• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• Journal of Electrical Engineering and Technology
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• v.7 no.6
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• pp.965-970
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• 2012

Structure and optical properties of cadmium sulphide-zinc oxide composite nanorods have been evaluated by suitable characterization techniques. The X-ray diffraction spectrum contains a series of peaks corresponding to reflections from various sets of lattice planes of hexagonal ZnO as well as CdS. The above observation is supported by the Micro-Raman spectroscopy result. The optical reflectance spectra of CdS-ZnO is compared with that of ZnO where we observe an enhanced absorption and hence diminished reflection from CdS-ZnO compared to that from only ZnO. A very small intensity of the visible photoluminescence peak observed at 550 nm proves that the ZnO nanorods have very low concentrations of point defects such as oxygen vacancies and zinc interstitials. The photocurrent in the visible region has been significantly enhanced due to deposition of CdS on the surface of the ZnO nanorods. CdS acts as a visible sensitizer because of its lower band gap compared to ZnO.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.145-152
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• 2000

X-ray diffraction method detects change of crystal lattice distance under material surface using diffraction angle 2$\theta$. This technique can be applied to the behavior on slip band and micro crack due to material degradation. The relation between half-value breadth and number of cycle has three stages which constitute rapid decrease in initial number of cycles, slight decrease in middle number of cycles and rapid decrease in final number of cycles. The ratio of half-value breadth takes a constant value on B/B$_{0}$-N diagram with loading condition except early part of fatigue life. The ratio of half-value breadth B/B$_{0}$ with respect to number of cycle to failure N$_{f}$ has linear behavior on B/B$_{0}$-log N$_{f}$ diagram. Therefore, in this paper the estimation of fatigue life by average gradient method has much less estimated mean error than the estimation of fatigue life by log B/B$_{0}$-log N/N$_{f}$ relation.elation.ation.

• Nuclear Engineering and Technology
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• v.53 no.12
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• pp.4052-4059
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• 2021

The microstructure of the fuel pellet plays an essential role in fission gas buildup and release and is critical for the safe and continued operation of nuclear power stations. Structural analysis of uranium dioxide (UO₂)-molybdenum (Mo) composite fuel pellets prepared at a range of sintering temperatures from 1300 to 1800 ℃ was performed. Mo micro and nanoparticles were used in making the composite pellets. A systematic investigation into the influence of processing parameters during Spark Plasma Sintering (SPS) of the pellets on the microstructure, texture, grain size, and grain boundary characters of UO₂-Mo is presented. UO₂-Mo composite show significant differences in the fraction of general boundaries and also special/coincident site lattice (CSL) boundaries. EBSD orientation maps demonstrated that <111> texturing was observed in the pellets fabricated at 1500 ℃. The experimental investigations suggest that UO₂-Mo composite pellets have favorable microstructural features compared to the UO₂ pellet.

• Journal of the Korean Magnetic Resonance Society
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• v.23 no.1
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• pp.12-19
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• 2019

A former study has shown that the spin-lattice relaxation time ($T_1$) in cancerous prostate tissue had enhanced contrast at an ultra-low magnetic field, $132{\mu}T$. To study the field dependence and the origin of the contrast we measured $T_1$ in pairs of ex-vivo prostate tissues at the Earth's magnetic field. A portable and coil-based nuclear magnetic resonance (NMR) system was adopted for $T_1$ measurements at $40{\mu}T$. The $T_1$ contrast, ${\delta}=1-T_1$ (more cancer)/$T_1$(less cancer), was calculated from each pair. Additionally, we performed pathological examinations such as Gleason's score, cell proliferation index, and micro-vessel density (MVD), to quantify correlations between the pathological parameters and $T_1$ of the cancerous prostate tissues.

• Korean Chemical Engineering Research
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• v.56 no.4
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• pp.585-591
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• 2018

Characteristics of nano-structured $SiO_2:Zn$ hollow powders prepared in the micro drop fluidized reactor process were investigated with respect to bandgap energy and surface activity. The $SiO_2:Zn$ hollow powders were successfully prepared continuously in the one step process with reasonable production efficiency, with varying the amount of THAM (tris(hydroxymethyl)-aminomethane) additive and concentration of $Zn^{2+}$ ions. The doping of $Zn^{2+}$ ions into $SiO_2$ lattice led to the reduction of bandgap energy by forming the acceptor level of $Zn^{2+}$ below the conduction band of $Si^{4+}$ ions. The hollow shape also contributed to reduce the bandgap energy of $SiO_2:Zn$ powders. The doping of $Zn^{2+}$ ions into $SiO_2$ hollow powders could enhance the surface activity by forming SiO-H stretching and oxygen vacancies at the surface of $SiO_2:Zn$ powders.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.29-33
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• 2017

Formation of Au particles in nonstoichiometric $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxide from aniline + hydrochloric acid mixtures and chloroauric acid in the ratios 30 : 1; 60 : 1; 90 : 1 (S1-S3) by volume and 0.01 mol of copper acetate, $Cu(OCOCH_3)_2.H_2O$, in each case is performed by sol-gel growth. Powder x-ray diffraction (XRD) results show Au particles are dispersed in tetragonal nonstoichiometric dicopper (I) dicopper (II) oxides, $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$). Average crystallite sizes of Au particles determined using Scherrer equation are found to be in the approximate ranges ${\sim}85-140{\AA}$, ${\sim}85-150{\AA}$ and ${\sim}80-150{\AA}$ in S1-S3, respectively which indicate the formation of Au nano-micro size particles in $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxides. Hysteresis behaviour at 300 K having low loop areas and magnetic susceptibility values ${\sim}5.835{\times}10^{-6}-9.889{\times}10^{-6}emu/gG$ in S1-S3 show weakly ferromagnetic nature of the samples. Broad and isotropic electron paramagnetic resonance (EPR) lineshapes of S1-S4 at 300, 77 and 8 K having $g_{iso}$-values ${\sim}2.053{\pm}0.008-2.304{\pm}0.008$ show rapid spin-lattice relaxation process in magnetic $Cu^{2+}$ ($3d^9$) sites as well as delocalized electrons in Au ($6s^1$) nano-micro size particles in the $Cu_{2-x}{^I}Cu{_2}^{II}O_{3-{\delta}}$ ($x{\approx}0.20$; ${\delta}{\approx}0.10$) oxides. Broad and weak UV-Vis diffuse reflectance optical absorption band ~725 nm is assigned to $^2B_{1g}{\rightarrow}^2A_{1g}$ transitions, and the weak band ~470 nm is due to $^2B_{1g}{\rightarrow}^2E_g$ transitions from the ground state $^2B_{1g}$(${\mid}d_{x^2-y^2}$>) of $Cu^{2+}$ ($3d^9$) ions in octahedral coordination having tetragonal distortion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.182-187
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• 2015

The growth and characterization of micro sized AlGaN array structures selectively grown by metal organic chemical vapor deposition (MOCVD) on GaN stripes are reported. The shape of the AlGaN array structures depends on the size of exposed area for selective growth. The AlGaN array structures grown selectively on relatively large exposed area have regular shapes resembling those of the GaN stripes on the substrate, while samples selectively grown on relatively small exposed area have irregular shapes. The phonon frequency of the AlGaN array structures increases with increasing Al composition in the AlGaN structure. However, at relatively high Al composition (x = 0.28 in this research), the phonon frequency decreases slightly from the expected value not only because of large tensile strain associated with large differences between the lattice constants of the AlGaN structure and underlying GaN stripes but also changes of crystal facet direction during the selective growth.