• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.103-104
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• 2007

$CuInO_2$ 단일상은 합성조건이 매우 까다롭기 때문에 일반적인 고상법으로 얻기 힘든 것으로 알려저 있다. 투명전도성 $CuInO_2$ 박막을 증착하기 위하여 일반적인 고상법으로 Cu와 In의 비율이 1:1인 $Cu_2O-In_2O_3$ composite target 및 In 대신 Ca, Mg, Ti가 각각 1mol% 도핑된 target을 제작하였다. 제작된 각각의 composite target을 이용하여 pulsed laser deposition(PLD) 공정으로 투명전도성 $CuInO_2$ 박막을 증착하였다. Cu와 In이 1:1 인 $Cu_2O-In_2O_3$ composite target을 사용한 경우, 증착된 박막이 Cu와 In의 비율이 1:1인 c-axis 배향된 단일상의 $CuInO_2$ 박막임을 확인하였다.

• Journal of the Korean institute of surface engineering
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• v.54 no.4
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• pp.184-193
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• 2021

This study demonstrates formation behavior and morphological changes of PEO (Plasma Electrolytic Oxidation) films on AZ91 Mg alloy as a function of pre-treatment time in 1 M HF solution at 25 ± 1 ℃. The electrochemical behavior and morphological changes of AZ91 Mg alloy in the pre-treatment solution were also investigated with pre-treatment time. The PEO films were formed on the pre-treated AZ91 Mg alloy specimen by the application of anodic current 100 mA/cm² of 300 Hz AC in 0.1 M NaOH + 0.4 M Na₂SiO₃ solution. Vigorous generation of hydrogen bubbles were observed upon immersion in the pre-treatment solution and its generation rate decreased with immersion time. It was also found that 𝛽-Mg₁₇Al₁₂ in AZ91 Mg alloy was dissolved and a protective thin film of MgF₂ was formed on the AZ91 Mg alloy surface during the pre-treatment process in the 1 M HF solution. PEO film did not grow on the AZ91 Mg alloy specimen when the surface was not pre-treated and irregular PEO films with nodular defects were formed for the specimens pre-treated up to 1 min. Uniform PEO films were formed when the AZ91 Mg alloy specimen was pre-treated more than 3 min. The growth rate of PEO films on AZ91 Mg alloy increased significantly with increasing pre-treatment time.

• Korean Journal of Materials Research
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• v.31 no.7
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• pp.382-385
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• 2021

Well-crystallized vanadium pentoxide V₂O₅ thin films are fabricated on MgO single crystal substrates by using pulsed-laser deposition technique. The linear optical transmission spectra are measured and found to be in a wavelength range from 300 to 800 nm; the data are used to determine the linear refractive index of the V₂O₅ films. The value of linear refractive index decreases with increasing wavelength, and the relationship can be well explained by Wemple's theory. The third-order nonlinear optical properties of the films are determined by a single beam z-scan method at a wavelength of 532 nm. The results show that the prepared V₂O₅ films exhibit a fast third-order nonlinear optical response with nonlinear absorption coefficient and nonlinear refractive index of 2.13 × 10^-10 m/W and 2.07 × 10^-15 cm²/kW, respectively. The real and imaginary parts of the nonlinear susceptibility are determined to be 3.03 × 10^-11 esu and 1.12 × 10^-11 esu, respectively. The enhancement of the nonlinear optical properties is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.153-153
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• 2006

ZnO 박막은 II-VI족 화합물 반도체로서 상온에서 3.37eV 의 넓은 밴드갭을 가지고 있을 뿐만 아니라 GaN(28meV) 보다 상온에서 큰 엑시톤 결합 에너지(60meV)와 열 안정성을 가지고 있다. 특히 ZnO를 base로 한 2차원의 화합물 (MgZnO, CdZnO 그리고 MgO) 반도체 물질은 UV LED, 생 화학 센서와 투명전극 등으로 응용이 가능하다. ZnO/MgZnO 양자우울 구조의 양자제한 효과로 인한 엑시톤 결합에너지와 전기적 광학적 특성 향상으로 광전자 소 자 제작이 가능하다. 그렇지만, Zn-Mg 상평형도에서 ZnO 내에 Mg 고용도가 상온에서 열역학적으로 4at% 이하 이고, 또한 ZnO와 MgO는 각각 우르짜이트 구조와 면심입방 구조를 가지기 때문에 Mg 함량용 높이는데 어려움이 있다. 이러한 문제점을 해결하기 위해 열처리를 함으로써 MgZnO 박막 내에 Mg 함량의 증가와 결정성 향상으로 고품질의 광전자 소자 제작을 가능하게 했다. 본 실험에서는 RF 마그네트론 스퍼터링 장비로 MgZnO 박막 성장 후 Si 기판위에 성장된 박막의 결정성 향상과 MgZnO 내의 Mg 함량 변화를 관찰하기 위해 성장된 박막에 대한 열처리 효과를 연구 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.65-65
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• 2006

ZnO 박막은 II-VI족 화합물 반도체로서 상온에서 3.37eV의 넓은 밴드갭을 가지고 있을 뿐만 아니라 GaN(28meV) 보다 상온에서 큰 엑시톤 결합 에너지(60meV)와 열 안정성을 가지고 있다. 특히 ZnO를 base로 한 2차원의 화합물 (MgZnO, CdZnO 그리고 MgO) 반도체 물질은 UV LED, 생 화학 센서와 투명전극 등으로 응용이 가능하다. ZnO/MgZnO 양자우물 구조의 양자제한 효과로 인한 엑시톤 결합에너지와 전기적 광학적 특성 향상으로 광전자 소 자 제작이 가능하다. 그렇지만, Zn-Mg 상평형도에서 ZnO 내에 Mg 고용도가 상온에서 열역학적으로 4at% 이하 이고, 또한 ZnO와 MgO는 각각 우르짜이트 구조와 면심입방 구조를 가지기 때문에 Mg 함량을 높이는데 어려움이 있다. 이러한 문제점을 해결하기 위해 열처리를 함으로써 MgZnO 박막 내에 Mg 함량의 증가와 결정성 향상으로 고품질의 광전자 소자 제작을 가능하게 했다. 본 실험에서는 RF 마그네트론 스퍼터링 장비로 MgZnO 박막 성장 후 Si 기판위에 성장된 박막의 결정성 향상과 MgZnO 내의 Mg 함량 변화를 관찰하기 위해 성장된 박막에 대한 열처리 효과를 연구 하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.23-23
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• 2010

The $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an $Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about $0.1{\mu}A/cm^2$. An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of $0.1{\mu}A/cm^2$ at 6V.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.370-374
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• 2002

This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.111-115
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• 1999

The structural characteristics of an epitaxial $BaTiO_3$ film on MgO(001) grown by sputtering were studied as a function of temperature using in-situ, real time synchrotron x-ray scattering experiments. We found that the as-grown film was single c-domain but strained at room temperature and tetragonally distorted with the c-axis normal to the film surface. Interestingly, its lattice parameters were found to be expanded in both the in-plane and the out-of -plane directions, i.e. biaxially, comparing with those of a bulk $BaTiO_3$ . More importantly, as it was heated up to $600^{\circ}C$, the tetragonal structure was kept up through without and any phase transition, which is usually observed in other epitaxial ferroelectric thin films.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.415-423
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• 1996

Thin film technologies for fabricating SQUIDs involve etching and deposition procedures with the proper substrate materials and $YBa_2Cu_3O_{7-d}$ (YBCO) as the high $T_c$ superconductor. YBCO were prepared on various substrates of MgO, $SrTiO_3$, and $LaAlO_3$ by using off-axis magnetron sputtering methods and annealing in-situ. The parameters of film fabrication processes had been optimized to yield good quality films in terms of the critical temperature $T_c$ and the critical current density $J_c$. The optimized processes yielded $T_C$>90K along with $J_c$>$10_6A$$extrm{cm}^2$ at 77K and>$2\times10_7A/Cm^2$ at 5K. We fabricated step-edge type dc-SQUIDs and directly coupled magnetometers, producing step edges on MgO(100) substrates by etching with Ar-ion beam, depositing YBCO material on them, then patterning them by using ion-milling technique. Circuitizing washer-shape SQUIDs to possess a pair of step-edge junctions of 2-5$\mu$ line width with a high angle>$50^{\circ}C$ , we examined their I-V characteristics thoroughly and Shapiro steps clearly as we irradiate microwaves of 8-20 GHz frequency.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.280-286
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• 1994

As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.