• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04a
• /
• pp.133-138
• /
• 2000

MgO thin films were deposited using $Mg(tmhd)_2$ as a precursor dissolved in a solvent by electrostatic spray pyrolysis. When a pure tetra hydro furan was used as a solvent, a large number of particles appeared on the MgO thin film surface due to homogeneous nucleation. However, by adding 1-butyl alcohol or 1-octyl alcohol to THF, homogeneous nucleation was restricted and the number density of the large particles was also drastically reduced. X-ray diffraction analysis showed that the MgO films had a (100) preferred orientation regardless of the type of solvents used. Characterization using Fourier Transformed-Infrared and spectroscopic photometer revealed that the crystallized MgO thin films on the glass substrate had a high optical transmittance (> 85 %) in the visible range. Discharge characteristics of MgO thin films deposited by ESP method on an alternating-current plasma display panel were compared with a MgO thin film prepared by reactive radio-frequency planar magnetron sputtering.

• Journal of the Korean Ceramic Society
• /
• v.37 no.6
• /
• pp.537-544
• /
• 2000

Thin-film humidity sensor which TiO2, ZrO2, or CeO2 was added to MgCr2O4-based materials, respectively, were fabricated on the alumina substrate by using a resistant-heating evaporator. Thin films were approximately 2${\mu}{\textrm}{m}$ in grain size and shwoed porous microstructures. The resistance of the sensor decreased with increasing the relative humidity and the MgCr2O4-TiO2 sensor had the best humidity-sensing characteristics (linearity in relative humidity versus resistance).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.6
• /
• pp.509-513
• /
• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.768-771
• /
• 2004

Pb0.5,Sr0.5TiO3(PST) thin films were deposited on Si with MgO (100) buffer layer by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. For the MgO/Si buffer layer, the PST thin films exhibited highly (100) orientation. The MgO buffer layer affects the stress state of the (100)-oriented PST thin films. The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the MgO/Si substrates measured at 10 kHz were 822, 0.025, and 80.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.379-382
• /
• 1999

In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)

• Proceedings of the KIEE Conference
• /
• 1998.07e
• /
• pp.1758-1760
• /
• 1998

MgO Protecting layer in AC PDP prevents ion bombardment in discharge plasma. The MgO layer also has the additional importance in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protecting layer is mainly prepared by E-beam Evaporation. However, the optimum activation manufacturing process of MgO thin film wasn't well known. Therefore in this study, after MgO protecting layer is prepared on dielectric layer by E-beam evaporation and liquid MgO spin coating, we carried out activation process of MgO thin film as a parameter of Temperature, Operating time and Operating pressure. In addition, discharge characteristics are also studied as a parameter of activation conditions.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1388-1390
• /
• 2007

This paper investigates how various concentrations of lithium ion influence on crystallization of MgO in thin films formed by spin coating and an the discharge characteristic in a flat fluorescent lamp structure. The XRD results indicate $Li^+$ ion enhances the growth of MgO crystal in a spin coated thin film. The discharge property with the $Li^+$ ion doped MgO films show the lithium ion in MgO film clearly reduce the initial discharge voltages of test devices. Interestingly, the test panels with various doped MgO film have somewhat higher static memory margin of than that of pure-MgO owing probably to the pore structure of spin coated MgO films. The CL spectra, which confirm that the doping creates defects energy levels in the band gap of MgO, show the $F^+$ center is the main defects in doped MgO films.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.6
• /
• pp.378-380
• /
• 2000

The epitaxial $BaTiO_{3}$ thin film was prepared on the MgO substrate by the coating-pyrolysis process using a mixed solution of Ba-naphthenate and Ti-naphthenate. The crystal structure of the epitaxial $BaTiO_{3}$ thin film was characterized by XRD ${\theta}/2{\theta}$ scan and asymmetric {303} rocking curve scan. The epitaxial $BaTiO_{3}$ thin film had the cubic phase with the lattice parameter of a = c = 0.4018 nm.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.224-227
• /
• 2002

The relationship between the discharge aging time and the superficial layer thickness of MgO thin film was investigated in an AC PDP. The discharge characteristics of an AC PDP with the various aging time were evaluated by discharge aging experiments. We find the presence of a superficial lay which is related to the discharge characteristics during aging process. The superficial layer of MgO thin film was observed by Transmission Electron Microscope (TEM). It was found that the superficial layer thickness of MgO was dependent on discharge aging time.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2172-2174
• /
• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.