• Title/Summary/Keyword: MgO layer

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A Study on the Discharge Characteristics and Formation of MgO Protection Layer for PDP by Reactive Sputtering (반응성 스파트링에 의한 PDP용 MgO 보호층 형성과 그 방전특성에 관한 연구)

  • 하홍주;이우근;남상옥;박영찬;조정수;박정후
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.357-360
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    • 1996
  • MgO protection layer in ac PDP(plasma display panel) prevents the dielectric layer from ion bombarding in discharge plasma. The MgO layer also has the additional important role in lowering the firing voltage due to a large secondary electron emission coefficient. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. In this study, MgO protection layer is prepared on dielectric layer of ac PDP cell by reactive R.F magnetron sputtering with Mg target under various conditions of oxygen partial pressure. Discharge characteristics of PDP is also studied as a parameter of MgO preparation conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporator.

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Preparation of Ferroelectric $BaTiO_3$ Thin Films on MgO-Buffered Si Substrates (MgO 완충층을 이용한 Si 기판상 강유전체 $BaTiO_3$ 박막의 제조)

  • 김상섭
    • Journal of the Korean Ceramic Society
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    • v.34 no.4
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    • pp.373-379
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    • 1997
  • A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

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Effect of the MgO buffer layer for MFIS structure using the BLT thin film (BLT 박막을 이용한 MFIS 구조에서 MgO buffer layer의 영향)

  • Lee, Jung-Mi;Kim, Kyoung-Tae;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.23-26
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    • 2003
  • The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.

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A Study on the Optimium Preparation Conditions of MgO Protection Layer in PDP by Reactive Sputtering (반응성 스파트링에 의한 PDP용 MgO 보호층의 최적 형성조건에 관한 연구)

  • 류주연;김영기;김규섭;조정수;박정후
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.432-435
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    • 1997
  • In AC PDP, electrodes are covered with dielectric layer and the discharge is formed on the surface of the dielectric layer. MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large secondary electron emission yield( ${\gamma}$ ). Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore, in this study, MgO protection layer is prepared on dielectric layer by reactive R.F. magnetron sputtering with MgO target. Discharge characteristics and secondary electron emission coefficients of PDP are studied as a parameter of preparation conditions. Discharge voltage characteristics of the prepared MgO layer can be stable and improved by the annealing process in vacuum chamber.

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Effect of $Al_2O_3$ capping layer on properties of MgO protection layer for plasma display panel

  • Eun, Jae-Hwan;Lee, Jung-Heon;Kim, Soo-Gil;Kim, Hyeong-Joon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.628-631
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    • 2002
  • $Al_2O_3$ capping layer and MgO protective layer were deposited by electron beam evaporation method using single crystal source. Thickness of the capping layer, $Al_2O_3$, was varied from 5 nm to 10 nm. Surface morphology was observed by SEM and AFM before and after hydration. And microstructure of deposited $Al_2O_3$ layer and chemical shift of electron binding energy were also observed by high resolution TEM and XPS, respectively, after hydration. From these results, it was found that Mg atoms diffused into $Al_2O_3$ layer, reacted with moisture and formed $Mg(OH)_2$ during hydration. As thickness of $Al_2O_3$ increased, extent of hydration increased. $Al_2O_3$ capped MgO thin films and uncapped MgO thin films were deposited on AC-PDP test panel to characterize discharge properties. Although $Al_2O_3$ has poor discharge properties rather than MgO, because of many hydrated species on the surface of MgO, similar discharge properties were observed.

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Effect of MgO Buffer Layer on the Structural Properties of Sputter-grown ZnO Thin Film (스퍼터링법으로 증착된 산화아연 박막의 구조적 성질에 대한 산화마그네슘 완충층의 효과 연구)

  • Lim, Young-Soo
    • Journal of the Korean Ceramic Society
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    • v.46 no.6
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    • pp.673-678
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    • 2009
  • The effect of MgO buffer layer on the structural properties of sputter-grown ZnO thin film was investigated. Sapphire (0001) and Si (100) substrate were used for the growth and MgO buffer layer was inserted between ZnO thin film and the substrate. X-ray diffraction pattern indicated that enhanced crystallinity in the ZnO thin film grown was achieved by inserting very thin MgO buffer layer, regardless of the substrate type. The strain in the ZnO thin film could also be controlled by the insertion of the MgO buffer layer, and tendency of the strain was strongly dependent on the substrate type.

Electro-optical Properties of ${Mg_{1-x}}{Zn_x}$O Thin Films Grown by a RF Magnetron Sputtering Method as a Protective Layer for AC PDPs (고주파 마그네트론 스퍼터링 방법으로 증착한 PDP용 ${Mg_{1-x}}{Zn_x}$O 보호막의 전기광학적 특성연구)

  • Jeong, Eun-Yeong;Lee, Sang-Geol;Lee, Do-Gyeong;Lee, Gyo-Jung;Son, Sang-Ho
    • Korean Journal of Materials Research
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    • v.11 no.3
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    • pp.197-202
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    • 2001
  • M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

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The Study on the relationships between $\gamma$-Coefficients and prepared conditions of MgO in ac PDP (AC PDP용 MgO의 형성조건과 2차전자방출계수의 상관관계에 관한 연구)

  • Ryu, Ju-Youn;Kim, Young-Kee;Ha, Hong-Ju;Cho, Jung-Soo;Park, Chung-Hoo
    • Proceedings of the KIEE Conference
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    • 1997.07e
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    • pp.1840-1842
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    • 1997
  • MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large $\gamma$-Coefficients. Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore in this study. MgO protection layer is prepared on dielectric layer by R.F. magnetron sputtering with Mg target under various conditions. The sputtered MgO shows the better discharge characteristics compared with MgO deposited by E-beam evaporatior.

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Study on the Atomic Layer Deposition System and Process of the MgO Thin Layer for the Thin Film Encapsulation of OLED (OLED의 Thin Film Encapsulation을 위한 MgO 박막의 원자층 증착 장치 및 공정에 관한 연구)

  • Cho, Eou Sik;Kwon, Sang Jik
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.3
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    • pp.22-26
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    • 2021
  • Thin-film encapsulation (TFE) technology is most effective in preventing water vapor and oxygen permeation in the organic light emitting diodes (OLED). Of those, a laminated structure of Al2O3 and MgO were applied to provide efficient barrier performance for increasing the stability of devices in air. Atomic layer deposition (ALD) method is known as the most promising technology for making the laminated Al2O3/MgO and is used to realize a thin film encapsulation technology in organic light-emitting diodes. Atomic layer deposited inorganic films have superior barrier performance and have advantages of excellent uniformity over large scales at relatively low deposition temperatures. In this study, the control system of the MgCP2 precursor for the atomic layer deposition of MgO was established in order to deposit the MgO layer stably by the injection time of second level and the stable heating temperature. The deposition rate was obtained stably to be from 4 to 10 Å/cycle using the injection pulse times ranging from 3 to 12 sec and a substrate temperature ranging from 80 to 150 ℃.

A Study on the Surface Characteristics of MgO Layer as the Various Deposition Methods of Electron-beam Evaporation (Electron-beam Evaporation의 증착 방법에 따른 MgO Layer의 표면 특성에 관한 연구)

  • Heo, Jeong-Eun;Lee, Don-Kyu;Cho, Sung-Yong;Lee, Hae-June;Lee, Ho-Jun;Park, Chung-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.5
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    • pp.468-473
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    • 2008
  • A MgO layer is used as electrode protective film in the alternating current plasma display panel (AC PDP). The properties of MgO layer are thought to be one of the most important factors that affects the panel reliability through the firing voltage variation. In this study, we investigated the relations between the surface characteristics and e-beam evaporation process parameters such as deposition rate, temperature of substrate and distance between the MgO pellet and substrate. To produce the MgO layer of (200) crystal orientation, we suggest the high temperature of the substrate, the long distance between the pellet and substrate and the high deposition rate.