• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1384-1387
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• 2007

We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the $O_2$ partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the $O_2$ partial pressure as 0, $5.2{\times}10^{-5}$, $1.0{\times}10^{-4}$, and $4.1{\times}10^{-4}$ Torr. It has been known that the secondary electron emission coefficient and the number of defect energy levels increased as the $O_2$ partial pressure increases. So we have investigated the property of sputtering yield according to the $O_2$ partial pressure. We have known that the sputtering yield deceases as the $O_2$ partial pressure increases by using the FIB system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.155-155
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• 2009

AC-PDP의 유전체 보호막 물질로 사용 종인 다결정 MgO의 전기적 특성을 개선하기 위하여 본 연구에서는 MgO에 doping 물질과 첨가량에 따른 전기적 특성을 고찰하였다. 박막을 증착시키기 위해 MgO pellet target을 만드는데 이때 pellet의 밀도, XRD, 비커스경도, 파괴인성, 표면 grain size와 이차전자방출계수와의 관계 및 박막의 표면거칠기, 표면의 형태, 투과율과 이차전자방출계수와의 관계를 고찰하였다. 이에 여러 dopant를 첨가하여 특성 평가한 실험데이터를 정리하여 이차전자방출계수와의 연계성을 조사 하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.41-41
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• 2002

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.224-227
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• 2007

The reconstruction characteristics of MgO (111) textured protective layer by over-frequency accelerated discharge in AC-PDP were investigated and correlated to the variations of electronic structures. The reconstruction process and exaggerated grain growth (EGG) were explained by defect-assisted 2-D nucleation and growth mechanism combined with charged cluster model.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.96-101
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• 2008

The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by Ion-Beam-Assisted Deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, Oxygen-Neutral-Beam-Assisted Deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen neutral beam energy of 300eV. The surface morphology of MgO thin film was also analyzed using AFM (Atomic Force Microscopy) and SEM (Scanning Electron Microscopy).

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.338-342
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• 2007

The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). In this paper, we describe the structural and discharge properties of MgO thin films, which were prepared by the ion-beam-assisted deposition (IBAD) of oxygen as the protective layer of PDPs. The energy of the oxygen ion beam was used as the parameter to control the deposition. We found that the oxygen ion beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen ion beam energy of 300 eV. The crystallization of the MgO thin film was also measured by X-ray diffraction analysis, and the surface quality was measured by atomic force microscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.611-614
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• 2007

The changes in the work $function({\Phi}_w)$ in the MgO protective layers after $plasma(Ar,\;H_2)$ treatment have been studied using ${\Upsilon}-focused$ ion beam $({\Upsilon}-FIB)$ system. The ${\Phi}_w$ was determined as follows: Ar-plasma $treatment({\Phi}_w=4.52eV)$, $H_2-plasma$ $treatment({\Phi}_w=5.65eV)$, and non-plasma $treatment({\Phi}_w=4.64eV)$. The results indicated that the H-plasma could not make any effective physical etching due to the small masses of hydrogen atoms and molecules while the hydration of H-plasma could grow some contaminating materials on the surface of MgO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.615-619
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• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1372-1375
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• 2007

MgO thin films were deposited by $O^+$ IBAD method and results showed assisting oxygen ion beam energy plays a significant role in characteristics of MgO thin films. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when oxygen ion beam energy was 300 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.117-117
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• 2006