• 제목/요약/키워드: Mg-doped

검색결과 342건 처리시간 0.027초

연료전지용 LSGM 페로브스카이트계 전해질의 합성 및 특성 연구 (Synthesis and Characterization of LSGM Solid Electrolyte for Solid Oxide Fuel Cell)

  • 성영훈;조승환;;김도경
    • 한국세라믹학회지
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    • 제44권12호
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    • pp.696-702
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    • 2007
  • The family of (Sr,Mg)-doped $LaGaO_3$ compounds, which exhibit high ionic conductivity at $600-800^{\circ}C$ over a wide range of oxygen partial pressure, appears to be promising as the electrolyte for intermediate temperature solid oxide fuel cells. Conventional synthesis routes of (Sr,Mg)-doped $LaGaO_3$ compounds based on solid state reaction have some problems such as the formation of impurity phases, long sintering time and Ga loss during high temperature sintering. Phase stability problem especially, the formation of additional phases at the grain boundary is detrimental to the electrical properties of the electrolyte. From this point of view, we focused to synthesize single phase (Sr,Mg)-doped $LaGaO_3$ electrolyte at the stage of powder synthesis and to apply relatively low heat-treatment temperature using novel synthesis route based on combustion method. The synthesized powder and sintered bulk electrolytes were characterized by XRD, TG-DTA, FT-IR and SEM. AC impedance spectroscopy was used to characterize the electrical transport properties of the electrolyte with the consideration of the contribution of the bulk lattice and grain boundary to the total conductivity. Finally, relationship between synthesis condition and electrical properties of the (Sr, Mg)-doped $LaGaO_3$ electrolytes was discussed with the consideration of phase analysis results.

불순물을 첨가한 $MgB_4O_7$ 열형광체의 물리적 특성에 관한 연구 (A Study on the Physical Properties of Impurity Doped $MgB_4O_7$ Porsphors)

  • 김영국;손인호;채건식;이수대;설정식;노경석;송재흥;이상윤;도시홍
    • 한국재료학회지
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    • 제8권2호
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    • pp.173-178
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    • 1998
  • $MgB_4O_7$ 열형광체의 활성체는 란탄계 금속인 Tb, Tm, Dy, La, Ho 및 Nd를 첨가하여 $580^{\circ}C$의 Ar 분위기에서 2시간동안 소결하여 제작하였다. 활성화에너지와 glow 곡선의 주 Peak의 세기는 peak shape법과 초기상승법의 두방법에 의해 결정했으며, 최적활성에너지는 $0.76\pm0.02eV$(Tm 첨가시), $0.94\pm0.03eV$(Tm 첨가시) 및 $0.72\pm0.02eV$(Dy 첨가시)였다. 이들 열형광체들은 저 에너지 X-선에 대해 매우 높은 감도를 나타냈으므로 방사선 센서 소자로 개발하기 위한 기초자료가 될 것으로 생각된다.

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SHG properties of MgO-doped $LiNbO_3$ single crystals

  • Lee, Jong-Soo;Kim, Chong-Don;Joo, Gi-Tae;Rhee, Bum-Ku
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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    • pp.163-170
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    • 1997
  • The MgO-doped LiNbO$_3$ single crystals were grown along c-axis by the Czochralski method with the pulling rate of 3mm/h and the rotation of 10rpm. The MgO contents were form 1 to 4 mole%. The SHG properties were investigated with the pulsed Nd:YAG laser, and thermo-optic coefficient, electro-optic coefficient of birefringence and curie temperature were measured. Phase matching temperature and Curie temperature increase similarly with MgO content until 4 mole%.

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Effects of Aging Treatment of doped-MgO Layer on Discharge Characteristics of ac-PDP

  • Park, Kyung-Hyun;Ko, Min-Soo;Yoon, Sang-Hoon;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.216-219
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    • 2007
  • Effects of aging treatment of doped-MgO electron emission layer on luminance efficiency of ac-PDP were investigated in this study. Morphological and luminance efficiency with aging treatment were examined, especially with emphasis on the effects of doping elements. The results indicate that the luminance efficiency of test panels depends on the type of doping elements used for MgO and that may be due to the redeposition of MgO during glow discharge.

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Electrochemical Determination of Chemical Oxygen Demand Based on Boron-Doped Diamond Electrode

  • Dian S. Latifah;Subin Jeon;Ilwhan Oh
    • Journal of Electrochemical Science and Technology
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    • 제14권3호
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    • pp.215-221
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    • 2023
  • A rapid and environment-friendly electrochemical sensor to determine the chemical oxygen demand (COD) has been developed. The boron-doped diamond (BDD) thin-film electrode is employed as the anode, which fully oxidizes organic pollutants and provides a current response in proportion to the COD values of the sample solution. The BDD-based amperometric COD sensor is optimized in terms of the applied potential and the solution pH. At the optimized conditions, the COD sensor exhibits a linear range of 0 to 80 mg/L and the detection limit of 1.1 mg/L. Using a set of model organic compounds, the electrochemical COD sensor is compared with the conventional dichromate COD method. The result shows an excellent correlation between the two methods.

백색 LED용 Ca3MgSi2O8:Eu2+ 백색 형광체의 발광특성 (Luminescent Characteristics of Eu2+- Doped Ca3MgSi2O8:Eu2+ White Phosphors for LED)

  • 유일
    • 한국재료학회지
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    • 제28권8호
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    • pp.474-477
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    • 2018
  • $Ca_3MgSi_2O_8:Eu^{2+}$(x = 0.003, 0.005, 0.007, 0.01, 0.03 mol) white phosphors for Light Emitting Diodes(LED) are synthesized with different concentrations of $Eu^{2+}$ ions using a solid state reaction method. The crystal structures, surface and optical properties of the phosphors are investigated using X-Ray Diffraction(XRD), Scanning Electron Microscope(SEM) and photoluminescence(PL). The X-Ray Diffraction results reveals that the crystal structure of the $Ca_3MgSi_2O_8:Eu^{2+}$ is a monoclinic system. The particle size of $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors is about $1{\sim}5{\mu}m$, as confirmed by SEM images. The maximum emission spectra of the phosphors are observed at 0.01 mol $Eu^{2+}$ concentration. The decrease in PL intensity in the $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors with $Eu^{2+}$ concentration is interpreted by concentration quenching. The International Commission on Illumination(CIE) coordinate of 0.01 mol Eu doped $Ca_3MgSi_2O_8$ is X = 0.2136, Y = 0.3771.

The critical Mg doping on the blue light emission in p-type GaN thin films grown by metal-organic chemical vapor deposition

  • Kim, Keun-Joo
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 기술교육위원회 창립총회 및 학술대회 의료기기전시회
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    • pp.52-59
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    • 2001
  • The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

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