• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.156-159
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• 2007

The red emission properties of $Mn^{4+}$ doped $SrAl_{12}O_{19}$ prepared by the solid-state reaction was investigated, in order to verify its potential to act as the red emitting phosphor of white LEDs. The emission spectrum exhibits a narrow band between $600{\sim}700 nm $ with four sharp peaks occurring at about 643, 656, 666, 671 nm due to the $^2E\to^4A_2$ transition of $Mn^{4+}$. The excitation spectrum exhibits a broad band between $200{\sim}500 nm$ with three peaks occurring at about 338, 398 and 468 nm, respectively. Moreover, the relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ with or without $CaF_2$ and MgO fluxes measured at excitation source 390 nm. The relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ containing 0.67mol% MgO was approximately 30% higher than that of the base composition sample. Strontium hexa-aluminate measured at room temperature as a function of the substituted Mg concentration. MgO was added to replace part of the $Al_2O_3$. Also, the relative emission intensity of $SrAl_{12}O_{19}:Mn^{4+}$ containing 0.67 mol% MgO and 0.67 mol% $CaF_2$ was approximately about 48% higher than that of the base composition $SrAl_{12}O_{19}:Mn^{4+}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.122-122
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.95-95
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• 2003

최근, 대면적 평판표시소자 제작을 위한 전기발광 (EL; electroluminescence)소자용 소재로서 GaN 분말을 적용하고자 하는 연구가 진행되고 있다. 이와 같이 GaN 분말을 EL 소재로 사용하기 위해서는 원하는 파장의 빛을 발광할 수 있도록 특정의 불순물을 첨가하여야 할 필요가 있다. Mg이 첨가된 GaN 분말의 합성과 특성에 대한 연구가 있었으며, 희토류 원소가 첨가된 GaN 분말의 특성이 보고된바 있다. 본 논문에서는 GaOOH 분말을 출발물질로 채택하여 Zn가 첨가된 GaN 분말을 합성하고 광학적인 특성을 조사하였다. Zn가 첨가된 GaN 분말을 합성하기 위하여, 우선 CaOOH 분말 1g과 일정량의 ZnO 또는 Zn(NO$_3$)$_3$를 함께 섞어 유발에서 습식 혼합한 후 건조시켰다. Ga에 대한 Zn의 몰 비는 0.1부터 30 까지 변화시켰다. 반응온도는 900~110$0^{\circ}C$의 범위에서 변화시켰고, 반응시간은 1~4시간 범위에서 변화시켰으며, NH$_3$의 유량은 400 sccm으로 하였다. X선 회절분석장치를 사용하여 결정구조를 확인하였고, Zn의 첨가에 따른 광학적 특성은 10 K의 온도에서 광루미네센스(PL; photoluminescence)를 측정하여 평가하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.156-156
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• 2009

• Journal of the Korean Graphic Arts Communication Society
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• v.13 no.2
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• pp.1-17
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• 1995

Organic thin film electroluminescene devices were fabricated using by molecularly doped method with N,N`-diphenyl-N,N`-bis(3-methylphenyl)-1,1`-biphenyl-4,4`-diamine(TPD) as a hole transport material, tris(8-quinolinolate) aluminium(III)(Alq3) as an emitting and electron transport agent, fluorescent squarylium(SQ) dye as a dopant, and poly(methylmethacrylate) as polymer materials. A cell structure of ITO/TPD-PMMA/Alq3-dopant/Mg was employed. The EL spectrum covers a wide range of the visible region and orange emission os observed. Two peaks at 520 and 660nm correspond to the emissions 620nm Alq3 and SQ dye, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.12-19
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• 2001

In this study, the physical properties of the piezoelectric sounder with metal-piezoelectric ceramics were analyzed. The dielectric and piezoeletric properties of 0.5wt% MnO$_2$ and NiO doped 0.1Pb(Mg$\_$1/3/Nb$\_$2/3/)O$_3$-0.45PbTiO$_3$-0.45PbZrO$_3$ ceramics were investigated aiming at acoustic transducer applications. The acoustic characteristics of a thin circular disc-type with metal-piezoceramics have been investigated. Also, the acoustic characteristics for the geometrical form of case were investigated. The piezoelectric sounder with 200kHz resonant frequency and 20kHz bandwidth was designed by considering the sharp directivity and the sound pressure.

• Journal of the Korean Ceramic Society
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• v.28 no.7
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• pp.568-576
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• 1991

The powder characterization and sintering behavior of alkoxide-derived alumina powders prepared by esterification were investigated. The dried powders were calcined at 700$^{\circ}C$, 900$^{\circ}C$, 1080$^{\circ}C$, 1170$^{\circ}C$ for 1 h. and the resulting crystalline forms were amorphous, {{{{ gamma }} phase, {{{{ theta }}+{{{{ alpha }} phase, and {{{{ alpha }} phase, respectively. The sinterability was best in the case of being calcined at 1170$^{\circ}C$. It was most effective to disperse sintering additive in the initial stage from which acetate was formed. At 1600$^{\circ}C$ for 4 h, 98.5% of relative density was obtained when MgO and Fe2O3 were simultaneously doped, and dense sintered body whose density was near theoretical value was obtained when heating schedule was controlled.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.283-286
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• 2000

In this study, the acoustic transducer of a thin circular disc-type with PZT/Metal was manufactured. The piezoelectric transducer with 200kHz resonance frequency was designed by considering the sharp directivity and the sound pressure. The dielectric and piezoelectric properties of 0.5 weight percent $MnO_2$ and NiO doped $0.1Pb(Mg_{1/3}Nb_{2/3})O_3-0.45PbTiO_3-0.42PbZrO_3$ ceramics were investigated aiming at acoustic transducer applications. Also, the acoustic characteristics of a thin circular disc-type with metal-piezoceramics have been Investigated.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.56-59
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• 2003

Wurtzite GaN films are grown by low-pressure MOCVD on (0001)-plane sapphire substrates. The GaN films have a total thickness of 4 $\mu$m with a surface Mg-doped p-type layer, which has a thickness of 0.5 $\mu$m. 90k eV $Mn^{+}$ ions are implanted into the GaN films at room temperature with doses ranging from $1 \times10^{15}$ to $1 \times 10^{16}\textrm{cm}^{-2}$. After an annealing step at $770^{\circ}C$ in flowing $N_2$, the structural characteristics of the $Mn^{+}$ implanted GaN films are studied by X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) and atomic force microscopy (AFM). The structural and morphological changes brought about by $Mn^{+}$ implantation and annealing are characterized.