• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.696-702
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• 2007

The family of (Sr,Mg)-doped $LaGaO_3$ compounds, which exhibit high ionic conductivity at $600-800^{\circ}C$ over a wide range of oxygen partial pressure, appears to be promising as the electrolyte for intermediate temperature solid oxide fuel cells. Conventional synthesis routes of (Sr,Mg)-doped $LaGaO_3$ compounds based on solid state reaction have some problems such as the formation of impurity phases, long sintering time and Ga loss during high temperature sintering. Phase stability problem especially, the formation of additional phases at the grain boundary is detrimental to the electrical properties of the electrolyte. From this point of view, we focused to synthesize single phase (Sr,Mg)-doped $LaGaO_3$ electrolyte at the stage of powder synthesis and to apply relatively low heat-treatment temperature using novel synthesis route based on combustion method. The synthesized powder and sintered bulk electrolytes were characterized by XRD, TG-DTA, FT-IR and SEM. AC impedance spectroscopy was used to characterize the electrical transport properties of the electrolyte with the consideration of the contribution of the bulk lattice and grain boundary to the total conductivity. Finally, relationship between synthesis condition and electrical properties of the (Sr, Mg)-doped $LaGaO_3$ electrolytes was discussed with the consideration of phase analysis results.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.173-178
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• 1998

$MgB_4O_7$: Tb, Tm, Dy, La, Ho and Nd phosphors have been prepared by sintering around $580^{\circ}C$ for 2 hours followed by flowing Ar gas. Activation energy and kinetic order of main peak of glow curve were studied by two methods peak shape method and initial rise method. By these methods, the estimated activation energies were $0.76\pm0.02eV$(Tb doped), $0.94\pm0.03eV$(Tm doped), $0.72\pm0.02eV$(Dy doped), respectively. The TL phosphors prepared in this work may be utilized to radiation sensor elements becaue of their high sensitivity to low energy X-ray.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.163-170
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• 1997

The MgO-doped LiNbO$_3$ single crystals were grown along c-axis by the Czochralski method with the pulling rate of 3mm/h and the rotation of 10rpm. The MgO contents were form 1 to 4 mole%. The SHG properties were investigated with the pulsed Nd:YAG laser, and thermo-optic coefficient, electro-optic coefficient of birefringence and curie temperature were measured. Phase matching temperature and Curie temperature increase similarly with MgO content until 4 mole%.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.216-219
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• 2007

Effects of aging treatment of doped-MgO electron emission layer on luminance efficiency of ac-PDP were investigated in this study. Morphological and luminance efficiency with aging treatment were examined, especially with emphasis on the effects of doping elements. The results indicate that the luminance efficiency of test panels depends on the type of doping elements used for MgO and that may be due to the redeposition of MgO during glow discharge.

• Journal of Electrochemical Science and Technology
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• v.14 no.3
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• pp.215-221
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• 2023

A rapid and environment-friendly electrochemical sensor to determine the chemical oxygen demand (COD) has been developed. The boron-doped diamond (BDD) thin-film electrode is employed as the anode, which fully oxidizes organic pollutants and provides a current response in proportion to the COD values of the sample solution. The BDD-based amperometric COD sensor is optimized in terms of the applied potential and the solution pH. At the optimized conditions, the COD sensor exhibits a linear range of 0 to 80 mg/L and the detection limit of 1.1 mg/L. Using a set of model organic compounds, the electrochemical COD sensor is compared with the conventional dichromate COD method. The result shows an excellent correlation between the two methods.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.474-477
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• 2018

$Ca_3MgSi_2O_8:Eu^{2+}$(x = 0.003, 0.005, 0.007, 0.01, 0.03 mol) white phosphors for Light Emitting Diodes(LED) are synthesized with different concentrations of $Eu^{2+}$ ions using a solid state reaction method. The crystal structures, surface and optical properties of the phosphors are investigated using X-Ray Diffraction(XRD), Scanning Electron Microscope(SEM) and photoluminescence(PL). The X-Ray Diffraction results reveals that the crystal structure of the $Ca_3MgSi_2O_8:Eu^{2+}$ is a monoclinic system. The particle size of $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors is about $1{\sim}5{\mu}m$, as confirmed by SEM images. The maximum emission spectra of the phosphors are observed at 0.01 mol $Eu^{2+}$ concentration. The decrease in PL intensity in the $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors with $Eu^{2+}$ concentration is interpreted by concentration quenching. The International Commission on Illumination(CIE) coordinate of 0.01 mol Eu doped $Ca_3MgSi_2O_8$ is X = 0.2136, Y = 0.3771.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.39.2-39
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.178-178
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• 2000

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.13-13
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• 2008