• Title/Summary/Keyword: Metallurgical grade silicon

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Purification of Si using Catalytic CVD

  • Jo, Chul-Gi;Lee, Kyeong-Seop;Song, Min-Wu;Kim, Young-Soon;Shin, Hyung-Shik
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.383-383
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    • 2009
  • Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

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Fabrication and property of silica nanospheres via rice-husk (왕겨를 통한 실리카 나노스페어의 제작과 특성)

  • Im, Yu-Bin;Kwk, Do-Hwan;Wahab, Rizwan;Lee, Hyun-Choel;Kim, Young-Soon;Yang, O-Bong;Shin, Hyung-Shik
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.619-619
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    • 2009
  • Recently, silica nanostructures are widely used in various applicationary areas such as chemical sensors, biosensors, nano-fillers, markers, catalysts, and as a substrate for quantum dots etc, because of their excellent physical, chemical and optical properties. Additionally, these days, semiconductor silica and silicon with high purity is a key challenge because of their metallurgical grade silicon (MG-Si) exhibit purity of about 99% produced by an arc discharge method with high cast. Tremendous efforts are being paid towards this direction to reduce the cast of high purity silicon for generation of photovoltaic power as a solar cell. In this direction, which contains a small amount of impurities, which can be further purified by acid leaching process. In this regard, initially the low cast rice-husk was cultivated from local rice field and washed well with high purity distilled water and were treated with acid leaching process (1:10 HCl and $H_2O$) to remove the atmospheric dirt and impurity. The acid treated rice-husk was again washed with distilled water and dried in an oven at $60^{\circ}C$. The dried rice-husk was further annealed at different temperatures (620 and $900^{\circ}C$) for the formation of silica nanospheres. The confirmation of silica was observed by the X-ray diffraction pattern and X-ray photoelectron spectroscopy. The morphology of obtained nanostructures were analyzed via Field-emission scanning electron microscope(FE-SEM) and Transmission electron microscopy(TEM) and it reveals that the size of each nanosphares is about 50-60nm. Using the Inductively coupled plasma mass spectrometry(ICP-MS), Silica was analyzed for the amount of impurities.

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Preparation of Silicon Tetrachloride by Chlorination of Silicon (실리콘의 염소화반응에 의한 사염화규소 제조)

  • Park, Kyun Young;Lee, Mi Sun;Kim, Min Cheol;Lee, Chan Hee;Park, Hoey Kyung;Kang, Tae Won;Jeong, Hae Seong;Han, Kyoung Ah;Huh, Weon Hoe;You, Ji Cheol
    • Korean Chemical Engineering Research
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    • v.51 no.3
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    • pp.407-410
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    • 2013
  • The chlorination of a metallurgical-grade silicon was carried out in a fluidized bed reactor, 25 mm in diameter. The flow rate of the chlorine admitted into the reactor was 0.2 L/min and that of the carrier nitrogen was 0.8~1.0 L/min. The reactor temperature was maintained at $450^{\circ}C$ and the temperature of the coolant at the $SiCl_4$ condenser was at $-5^{\circ}C$. The $SiCl_4$ yield increased with increasing the mole fraction of chlorine in the feed gas, exhibiting 28% at the mole fraction of 0.2. Further increase of the chlorine mole fraction was not attempted in a worry that the reactor might be failed due to the high exothermicity of the reaction. The production of $SiCl_4$ from silicon by fluidized bed chlorination was demonstrated on a laboratory scale, which is a stepping stone for future studies under more severe conditions toward industrial application.

Research for refining processes to produce high-purity polycrystalline silicon from domestic quartzite mine (국내 규석광으로부터 고순도 실리콘 제조를 위한 정련 공정에 관한 연구)

  • Moon, Byung Moon;Kim, Gangjune;Koo, Hyun Jin;Park, Dong Ho;Yu, Tae U
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.48-48
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    • 2011
  • 2010년 약 19.5 GWp 의 규모로 성장한 태양광 시장의 주요 소재는 실리콘을 이용한 태양전지이며, 고성능 및 고효율 태양전지 시장이 급성장 하였다. 이러한 고품질 태양전지에 사용되는 주요 원료인 9N 급 폴리실리콘은 2008년 4월 $265/kg 까지 상승하였으나, 점차 하향안정세에 있으며, 급속한 가격 경쟁을 통해 당분간 장기공급가가 50$/kg 이하로 하락할 것으로 전망된다. 이러한 실리콘 제조기술 중 가장 많이 사용되는 기술은 Trichloro-silane (TCS) 또는 Mono-silane (MS)를 사용하는 기상법인 일명 Siemens 공정이다. 이러한 기상법의 경우 12N 이상의 초고품질 실리콘 제조가 가능하나, 대규모의 설비투자(1억원/폴리실리콘 1톤)와 높은 에너지(120 kWh/kg)가 요구된다. 이에 최근 기상법이 아닌 야금학적인 정련법에 대한 기술이 개발되고 있으며, 이는 금속 실리콘을 슬래그 처리, 편석 분리, 응고 급랭, 전자빔, 플라즈마 등을 이용하여 정련하는 공정을 말한다. 야금학적 정련법은 순도 면에서 기상법에 비하여 낮은 단점이 있음에도 불구하고, 여러 장점들로 인해 활발히 연구되며 점차 실용화 되고 있는 매우 유용한 기술이다. 야금학적 정련법의 주요 장점은 기상법에 비해 약 25% 정도의 설비 투자비로 가능하고, 금속 실리콘을 직접 사용하며, 에너지 payback이 짧다. 또한, 산 및 염화실렌을 사용하지 않으므로 환경 문제를 적게 야기하고, 생산설비의 확장성도 매우 높다. 본 연구에서는 국내 규석광을 이용하여 일련의 정련 공정을 거쳐 고순도SG(Solar Grade)급 실리콘을 제조하고자 하였다. 실리콘 용융 환원로를 개발하고 순도를 높이기 위해 슬래그정련법을 이용하였으며, 생산된 3N 급의 금속 실리콘을 비기상법정련 방식인 일방향 응고와 플라즈마 정련 및 전자기유도 용해법을 이용하여 고순도의 실리콘을 제조하였다. 본 연구에서는 상업생산을 개시한 외국의 E사와 비교하여 산침출공정을 거치지 않으므로 실리콘회수율 및 환경부하 절감의 장점을 갖고 있으며 최종 순도 실리콘 6N 이상, 보론 함유량 0.2 ppm 이하를 달성하였으며, 기존 기상법 대비 약 20%의 전력 감소와 약 13%의 금속실리콘 원료 절감 효과가 있었다. 저가/고순도 SG급실리콘의 제조기술 개발은 향후 세계 태양광 시장에 대한 경쟁력을 확보하고, 시장 점유율 상승에 기여할 수 있으며, 산업 확대를 통한 주변 산업으로의 파급 효과가 매우 클 것으로 예상된다.

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