• Corrosion Science and Technology
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• v.7 no.6
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• pp.315-318
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• 2008

The atmospheric corrosion performance of Al-alloying, Si-alloying and Al-Si-alloying steel were studied by wet/dry cyclic corrosion tests (CCT) at $30^{\circ}C$ and 60% relative humidity (RH). The corrosion electrolyte used for CCT was 0.052 wt% $NaHSO_{3}$ (pH~4) solution. The result of gravimetry demonstrated that Al-Si-bearing steels showed lower corrosion resistance than other rusted steels. But the rusted 0.7%Si-alloying steel showed a better corrosion resistance than rusted mild steel. Polarization curves demonstrated that Al-/Si-alloying and Al-Si-alloying improved the rest potential of steel at the initial stage; and accelerated the cathodic reduction and anodic dissolution after a rust layer formed on the surfaces of steels. XRD results showed that Al-Si-alloying decreased the volume fraction of $Fe_{3}O_{4}$ and $\alpha-FeOOH$. The recycle of acid accelerated the corrosion of steel at the initial stage. After the rust layer formed on the steel, the leak of rust destabilized the rust layer due to the dissolution of compound containing Al (such as $FeAl_{2}O_{4}$, $(Fe,\;Si)_{2}(Fe,\;Al)O_{4}$). Al-Si-alloying is hence not suitable for improving the anti-corrosion resistance of steel in industrial atmosphere.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.457-457
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• 2014

오존발생방법은 다양한 방식으로 구현이 가능하나 대용량 장치를 만들기 위해서는 DBD (Dielectric barrier discharge) 구조의 형태의 가지고 있다. 이러한, DBD는 반도체의 MOS (Metal On Semiconductor)의 반대 구조를 가진 SOM (Semiconductor On Metal)의 형태를 가지고 있으며 대부분이 Oxidation 산화물을 가지고 구현한다. 오존발생기는 반도체 공정, 환경 및 정화 등 다양한 분야에 사용이 되고 있는 상황으로 성능개선을 위한 연구가 필요한 상황이다. 대표적으로 사용되는 물질인 $SiO_2$를 가지고 있는 상황이며 Silicon은 에너지 Bandgap이 1.1 eV로 금속위에 증착되어 통상적으로 사용되는 문턱전압은 0.7 V에 해당이 된다. 현재 점차적으로 연구가 진행되고 있는 $Al_2O_3$는 8.8 eV의 bandgap을 가지고 있으며 유전 상수가 9로 $SiO_2$인 3.9보다 높은 유전률 특징을 가지고 있다. 따라서, 본 연구는 오존 발생장치에 사용되는 방전관을 기존의 $SiO_2$에서 $Al_2O_3$ 방식으로 대체하므로써 실제적인 유전율의 값의 차이와 오존 발생시 오존변화율 증대에 관하여 연구하였다. $SiO_2$ 방전관은 Fe 메탈위에 약 3 mm정도의 두께를 binding시켜 N4L사의 PSM1700 모델 LCR meter를 사용하여 1.3 kHz시 7.2 pF의 유전율 확인 할 수 있으며 동일한 조건의 금속 메탈위에 $Al_2O_3$를 binding 시켜 측정한 결과 1.07 kHz시 10.7 pF의 유전율을 가지게 되어 40% 이상 높은 유전율을 가지게 되는 것을 확인 할 수 있다. 오존발생을 위하여 가변 주파수형 트랜스 드라이버를 통한 공진 주파수를 생성하여 방전 증폭을 위한 Amplifier를 통하여 변환률을 높이는 방식을 적용하여 MIDAC사의 I1801모델 적외선 분광기(FT-IR)를 통한 오존발생량을 측정하여 기존의 $SiO_2$의 방전관은 시간당 54 g의 오존 발생률 가지게 된다. $Al_2O_3$는 시간당 70 g 정도의 오존 발생률 가지므로 기존의 $SiO_2$ 보다 발생률 높은 것을 확인 할 수 있다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1996.11a
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• pp.6-6
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• 1996

Ceramic based nanocomposite, in which nano-sized ceramics and metals were dispersed within matrix grains and/or at grain boundaries, were successfully fabricated in the ceramic/cerarnic and ceramic/metal composite systems such as $Al_2O_3$/SiC, $Al_2O_3$/$Si_3N_4$, MgO/SiC, mullite/SiC, $Si_3N_4/SiC, $Si_3N_4$/B, $Al_2O_3$/W, $Al_2O_3$/Mo, $Al_2O_3$/Ni and $ZrO_2$/Mo systems. In these systems, the ceramiclceramic composites were fabricated from homogeneously mixed powders, powders with thin coatings of the second phases and amorphous precursor composite powders by usual powder metallurgical methods. The ceramiclmetal nanocomposites were prepared by combination of H2 reduction of metal oxides in the early stage of sinterings and usual powder metallurgical processes. The transmission electron microscopic observation for the $Al_2O_3$/SiC nanocomposite indicated that the second phases less than 70nm were mainly located within matrix grains and the larger particles were dispersed at the grain boundaries. The similar observation was also identified for other cerarnic/ceramic and ceramiclmetal nanocornposites. The striking findings in these nanocomposites were that mechanical properties were significantly improved by the nano-sized dispersion from 5 to 10 vol% even at high temperatures. For example, the improvement in hcture strength by 2 to 5 times and in creep resistance by 2 to 4 orders was observed not only for the ceramidceramic nanocomposites but also for the ceramiclmetal nanocomposites with only 5~01%se cond phase. The newly developed silicon nitride/boron nitride nanocomposites, in which nano-sized hexagonal BN particulates with low Young's modulus and fracture strength were dispersed mainly within matrix grains, gave also the strong improvement in fracture strength and thermal shock fracture resistance. In presentation, the process-rnicro/nanostructure-properties relationship will be presented in detail. The special emphasis will be placed on the understanding of the roles of nano-sized dispersions on mechanical properties.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.719-724
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• 2006

Ultrafine mullite powder was prepared from aluminium-secbutoxide and tetraethyl orthosilicate(TEOS) in the molar $Al_2O_3/SiO_2$=3/2. Sol-gel method by partial hydrolysis technique, as it were, first, TEOS was partially hydrolysized and then mixed with Al-secbutoxide for complete hydrolysis was used. X-ray diffraction, infrared spectroscopy and transmission electron microscopy, etc. confirmed that the mullite powder prepared by this method is in the stoichiometric $Al_2O_3/SiO_2$ ratio. Al-Si spinel was formed at $980^{\circ}C$ and ultrafine mullite powder with about 20 nm particle size was obtained above $1,200^{\circ}C$. Also mullite powders calcined at $1,600^{\circ}C$ had a stoichiometric composition, $3Al_2O_3{\cdot}2SiO_2$ and the lattice constants of the mullite powders calcined above $1,200^{\circ}C$ were almost coincided with theoretical values.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2000.04a
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• pp.109-115
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• 2000

In the present study, (10%$Al_2O_3$+5%Si)/AZ91 Mg hybrid composite was fabricated using the squeeze casting method. During squeeze casting, molten Mg was infiltrated into the preform of 10%$Al_2O_3$+5%Si and reaction product of $Mg_2Si$ intermetallic compound was formed by the reaction between molten Mg and Si powder. Microstructure has been observed and mechanical properties were evaluated for the reaction squeeze cast (RSC) hybrid composite. It was found that Si powder totally reacted with molten Mg to form $Mg_2Si$. Reinforcement ($Al_2O_3$) and the reaction product ($Mg_2Si$) are fairly uniformly distributed in Mg matrix for the squeeze cast hybrid composite. Mechanical properties were improved with hybridization of reinforcements, namely higher hardness and enhanced wear resistance comparing squeeze cast (15%$Al_2O_3$)/AZ91 Mg composite.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.1-1
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• 1999

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.70-73
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• 2004

The packaging of the integrated circuits requires knowledge of ceramics and metals to accommodate the fabrication of modules that are used to construct subsystems and entire systems from extremely small components. Composite ceramics (Al$_2$O$_3$-SiO$_2$) were tested for substrates. A stress analysis was conducted for a linear work-hardening metal cylinder embedded in an infinite ceramic matrix. The bond between the metal and ceramic was established at high temperature and stresses developed during cooling to room temperature. The calculations showed that the stresses depend on the mismatch in thermal expansion, the elastic properties, and the yield strength and work hardening rate of the metal. Experimental measurements of the surface stresses have also been made on a Cu/Al$_2$O$_3$-SiO$_2$ceramic system, using an indentation technique. A comparison revealed that the calculated stresses were appreciably larger than the measured surface stresses, indicating an important difference between the bulk and surface residual stresses. However, it was also shown that porosity in the metal could plastically expand and permit substantial dilatational relaxation of the residual stresses. Conversely it was noted that pore clusters were capable of initiating ductile rupture, by means of a plastic instability, in the presence of appreciable tri-axiality. The role of ceramics for packaging of microelectronics will continue to be extremely challenging.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.46-49
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• 2003

Aluminum based metal matrix composites(MMCs) are well known for their high specific strength, stiffness and hardness. They are gaining further importance because of their high wear resistance. In this study, Al/Saffil-20%, Al/Saffil-5%/Al2O3(particle type)-15% and Al/Saffil-5%/SiC(particle type)-15% hybird MMCs' wear behavior were characterized by the pin-on-disk test under various normal load The superior wear resistance was exhibited at Al/Saffil-5%/SiC(particle type)-15% MMCs. And this MMCs' predominant wear mechanism is subsurface cracking in the low load wear regime. Others(Al/Saffil-20%, Al/Saffil-5%/Al2O3(particle type)-15%) showed the similar wear resistance with each other at the same test condition. In the low load & room temperature condition, the wear resistance was improved due to the high hardness of the ceramic reinforcements. As the test load increased, the wear properties were governed by the wear properties of matrix.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.35 no.10
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• pp.465-472
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• 1986

The present study was carried out to investigate the mechanism which control the voltage instability and the breakdown of CVD Al2O3 on Si substrates. Our sample were metal-Al2O3-Oi Capacitors with both Al and Au field plates. Electron injection and trapping, with resultant positive flatband voltage shift, occur at fields as low as 1-2[MV/cm.] We developed an approximate method for computing the location of the centroid of the trapped electrons. Our results indicate that the electrons are trapped near the injecting interface, at least for fields less than about 5[MV/cm ] Because of continued charging, a true steady state is probably never reached, and the only unique I-V curve is the one obtained initially, when the traps are empty. We measured this I-V curve for both polarities of applied voltage, using a fresh sample for each point. The observed current densities are much larger than those obtained in thermally grawn SiO2.