• Journal of Sensor Science and Technology
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• v.32 no.5
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• pp.290-294
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• 2023

Among various types of harmful gases, hydrogen sulfide is a strong toxic gas that is mainly generated during spillage and wastewater treatment at industrial sites. Hydrogen sulfide can irritate the conjunctiva even at low concentrations of less than 10 ppm, cause coughing, paralysis of smell and respiratory failure at a concentration of 100 ppm, and coma and permanent brain loss at concentrations above 1000 ppm. Therefore, rapid detection of hydrogen sulfide among harmful gases is extremely important for our safety, health, and comfortable living environment. Most hydrogen sulfide gas sensors that have been reported are electrical resistive metal oxide-based semiconductor gas sensors that are easy to manufacture and mass-produce and have the advantage of high sensitivity; however, they have low gas selectivity. In contrast, the electrochemical sensor measures the concentration of hydrogen sulfide using an electrochemical reaction between hydrogen sulfide, an electrode, and an electrolyte. Electrochemical sensors have various advantages, including sensitivity, selectivity, fast response time, and the ability to measure room temperature. However, most electrochemical hydrogen sulfide gas sensors depend on imports. Although domestic technologies and products exist, more research is required on their long-term stability and reliability. Therefore, this study includes the processes from electrode material synthesis to sensor fabrication and characteristic evaluation, and introduces the sensor structure design and material selection to improve the sensitivity and selectivity of the sensor. A sensor case was fabricated using a 3D printer, and an Ag reference electrode, and a Pt counter electrode were deposited and applied to a Polytetrafluoroethylene (PTFE) filter using PVD. The working electrode was also deposited on a PTFE filter using vacuum filtration, and an electrochemical hydrogen sulfide gas sensor capable of measuring concentrations as low as 0.6 ppm was developed.

• Journal of IKEEE
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• v.28 no.2
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• pp.174-179
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• 2024

In this work, we introduce a complementary metal-oxide semiconductor(CMOS)-based integrated circuit(IC) measurement set-up for quantum computer control and read-out using a cryogenic refrigerator. CMOS circuits have to operate at extremely low temperatures of 3 to 5 K for qubit stability and noise reduction. The existing cryogenic measurement system is liquid helium quenching, which is expensive due to the long-term use of expendable resources. Therefore, we describe a cryogenic measurement system based on a closed cycle refrigerator (CCR) that is cost-free even when using helium gas for long periods of time. The refrigerator capable of reaching 4.7 K was built using a Gifford-Mcmahon(G-M) type cryocooler. This is expected to be a cryogenic refrigerator set-up with excellent price competitiveness.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Korean Chemical Engineering Research
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• v.60 no.2
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• pp.313-319
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• 2022

AlGaN/GaN based HfO₂ MOSHEMT (metal oxide semiconductor high electron transistor) with different gate recess depth was simulate to demonstrate a successful normally-off operation of the transistor. Three types of the HEMT structures including a conventional HEMT, a gate-recessed HEMT with 3 nm thick AlGaN layer, and MIS-HEMT without AlGaN layer in the gate region. The conventional HEMT showed a normally-on characteristics with a drain current of 0.35 A at V_G = 0 V and V_DS = 15 V. The recessed HEMT with 3 nm AlGaN layer exhibited a decreased drain current of 0.15 A under the same bias condition due to the decrease of electron concentration in 2DEG (2-dimensional electron gas) channel. For the last HEMT structure, distinctive normally- off behavior of the transistor was observed, and the turn-on voltage was shifted to 0 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• The Journal of Korean Society for Radiation Therapy
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• v.31 no.1
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• pp.75-81
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• 2019

Purpose: Helmet type bolus for 3D printer is being manufactured because of the disadvantages of Bolus materials when photon beam is used for the treatment of scalp malignancy. However, PLA, which is a used material, has a higher density than a tissue equivalent material and inconveniences occur when the patient wears PLA. In this study, we try to treat malignant scalp tumors by using M3 wax helmet with 3D printer. Methods and materials: For the modeling of the helmet type M3 wax, the head phantom was photographed by CT, which was acquired with a DICOM file. The part for helmet on the scalp was made with Helmet contour. The M3 Wax helmet was made by dissolving paraffin wax, mixing magnesium oxide and calcium carbonate, solidifying it in a PLA 3D helmet, and then eliminated PLA 3D Helmet of the surface. The treatment plan was based on Intensity-Modulated Radiation Therapy (IMRT) of 10 Portals, and the therapeutic dose was 200 cGy, using Analytical Anisotropic Algorithm (AAA) of Eclipse. Then, the dose was verified by using EBT3 film and Mosfet (Metal Oxide Semiconductor Field Effect Transistor: USA), and the IMRT plan was measured 3 times in 3 parts by reproducing the phantom of the head human model under the same condition with the CT simulation room. Results: The Hounsfield unit (HU) of the bolus measured by CT was $52{\pm}37.1$. The dose of TPS was 186.6 cGy, 193.2 cGy and 190.6 cGy at the M3 Wax bolus measurement points of A, B and C, and the dose measured three times at Mostet was $179.66{\pm}2.62cGy$, $184.33{\pm}1.24cGy$ and $195.33{\pm}1.69cGy$. And the error rates were -3.71 %, -4.59 %, and 2.48 %. The dose measured with EBT3 film was $182.00{\pm}1.63cGy$, $193.66{\pm}2.05cGy$ and $196{\pm}2.16cGy$. The error rates were -2.46 %, 0.23 % and 2.83 %. Conclusions: The thickness of the M3 wax bolus was 2 cm, which could help the treatment plan to be established by easily lowering the dose of the brain part. The maximum error rate of the scalp surface dose was measured within 5 % and generally within 3 %, even in the A, B, C measurements of dosimeters of EBT3 film and Mosfet in the treatment dose verification. The making period of M3 wax bolus is shorter, cheaper than that of 3D printer, can be reused and is very useful for the treatment of scalp malignancies as human tissue equivalent material. Therefore, we think that the use of casting type M3 wax bolus, which will complement the making period and cost of high capacity Bolus and Compensator in 3D printer, will increase later.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.57-58
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• 2011

III-V족 화합물 반도체의 일종인 InSb는 77 K에서 0.23 eV의 작은 밴드 갭을 가지며 높은 전하 이동도를 가지고 있기 때문에 대기권에서 전자파 흡수가 일어나지 않는 3~5 ${\mu}m$범위의 장파장 적외선 감지가 가능하여 중적외선 감지 소자로 이용되고 있다. 하지만 InSb는 밴드 갭이 매우 작기 때문에, 소자 제작시 누설전류에 의한 소자 특성의 저하가 문제시 되고 있다. 또한 다른 화합물 반도체에 비해 녹는점이 낮고, 휘발성이 강한 5족 원소인 Sb의 승화로 기판의 화학양론적 조성비(stoichiometry)가 변하기 쉬워, 계면특성 저하의 원인이 된다. 따라서 우수한 특성을 가지는 적외선 소자의 구현을 위해서, 저온에서 계면 특성이 우수한 고품질의 절연막 증착 연구가 필수적이다. 본 연구에서는 InSb 기판 위에 $SiO_2$, $Si_3N_4$의 절연막 형성시 증착온도의 변화에 따른 계면 트랩 밀도를 분석하였다. $SiO_2$, $Si_3N_4$ 절연막은 플라즈마 화학 기상 증착법(PECVD)을 이용하여 n형 InSb 기판 위에 증착하였으며, 증착온도를 $120^{\circ}C$부터 $240^{\circ}C$까지 변화시켰다. Metal oxide semiconductor(MOS) 구조 제작을 통하여, 커패시턴스-전압(C-V)분석을 진행하였으며, 절연막과 InSb 사이의 계면 트랩 밀도를 Terman method를 이용하여 계산하였다[1]. 또한, $SiO_2$와 $Si_3N_4$의 XPS 분석과 TOF-SIMS 분석을 통하여 계면 트랩 밀도의 원인을 밝혀 보았다. $120{\sim}240^{\circ}C$ 온도 범위에서 계면 트랩 밀도는 $Si_3N_4$의 경우 $2.4{\sim}4.9{\times}10^{12}cm^{-2}eV^{-1}$, $SiO_2$의 경우 $7.1{\sim}7.3{\times}10^{11}cm^{-2}eV^{-1}$ 값을 나타냈고, 두 절연막 모두 증착 온도가 증가할수록 계면 트랩 밀도가 증가하는 경향을 보였다. 그러나 모든 샘플에서 $Si_3N_4$의 경우, flat band voltage가 음의 전압으로 이동한 반면, $SiO_2$의 경우, 양의 전압으로 이동하는 것을 확인할 수 있었다. 계면 트랩 밀도 증가의 원인을 확인하기 위해서, oxide를 $120^{\circ}C$, $240^{\circ}C$에서 증착시킨 샘플을 XPS 분석을 통하여 깊이에 따른 성분분석을 하였고, 그 결과, $240^{\circ}C$에서 증착된 샘플에서 계면에서 $In_2O_3$와 $Sb_2O_3$ 피크의 증가를 확인하였다. 이는 계면에서 oxide양이 증가함을 의미하며, 이렇게 생성된 oxide는 계면 트랩으로 작용하므로, 계면 특성을 저하시키는 원인으로 작용함을 알 수 있었다. Nitride 절연막을 증착시킨 샘플은 TOF-SIMS 분석을 통해, 계면에서의 성분 분석을 하였고, 그 결과, $240^{\circ}C$에서 증착된 샘플에서 In-N, Sb-N, Si-N 결합의 감소를 확인하였다. 이렇게 분해된 결합들의 dangling 결합이 늘어 계면 트랩으로 작용하므로, 계면 특성을 저하시키는 원인으로 작용함을 알 수 있었다. 최종적으로, 소자특성을 확인 하기 위하여 계면 트랩 밀도가 가장 낮게 측정된 $200^{\circ}C$ 조건에서 $SiO_2$ 절연막을 증착하여 InSb 적외선 소자를 제작하였다. 전류-전압(I-V) 분석 결과 -0.1 V에서 16 nA의 누설 전류 값을 보였으며, $2.6{\times}10^3{\Omega}cm^2$의 RoA(zero bias resistance area)를 얻을 수 있었다. 절연막 증착조건의 최적화를 통하여, InSb 적외선 소자의 특성이 개선됨을 확인할 수 있었다.

• Clean Technology
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• v.29 no.2
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• pp.126-134
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• 2023

Direct catalytic decomposition is a promising method for controlling the emission of nitrous oxide (N₂O) from the semiconductor and display industries. In this study, a γ-Al₂O₃ catalyst was developed to reduce N₂O emissions by a catalytic decomposition reaction. The γ-Al₂O₃ catalyst was prepared by an extrusion method using boehmite powder, and a N₂O decomposition test was performed using a catalyst reactor that was approximately 25.4 mm (1 in) in diameter packed with approximately 5 mm of catalysts. The N₂O decomposition tests were carried out with approximately 1% N₂O at 550 to 750 ℃, an ambient pressure, and a GHSV=1800-2000 h^-1. To confirm the N₂O decomposition properties and the effect of O₂ and steam on the N₂O decomposition, nitrogen, air, and air and steam were used as atmospheric gases. The catalytic decomposition tests showed that the 1% N₂O had almost completely disappeared at 700 ℃ in an N₂ atmosphere. However, air and steam decreased the conversion rate drastically. The long term stability test carried out under an N₂ atmosphere at 700 ℃ for 350 h showed that the N₂O conversion rate remained very stable, confirming no catalytic activity changes. From the results of the N₂O decomposition tests and long-term stability test, it is expected that the prepared γ-Al₂O₃ catalyst can be used to reduce N₂O emissions from several industries including the semiconductor, display, and nitric acid manufacturing industry.

• The Journal of Korean Society for Radiation Therapy
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• v.30 no.1_2
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• pp.49-63
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• 2018

Purpose : The purpose of this study is investigating the changes of treatment plan and comparing skin dose with or without the skin flash. To investigate optimal applications of the skin flash, the changes of skin dose of each plans by various thicknesses of skin flash were measured and analyzed also. Methods and Material : Anthropomorphic phantom was scanned by CT for this study. The 2 fields hybrid IMRT and the 6 fields static IMRT were generated from the Eclipse (ver. 13.7.16, Varian, USA) RTP system. Additional plans were generated from each IMRT plans by changing skin flash thickness to 0.5 cm, 1.0 cm, 1.5 cm, 2.0 cm and 2.5 cm. MU and maximum doses were measured also. The treatment equipment was 6MV of VitalBeam (Varian Medical System, USA). Measuring device was a metal oxide semiconductor field-effect transistor(MOSFET). Measuring points of skin doses are upper (1), middle (2) and lower (3) positions from center of the left breast of the phantom. Other points of skin doses, artificially moved to medial and lateral sides by 0.5 cm, were also measured. Results : The reference value of 2F-hIMRT was 206.7 cGy at 1, 186.7 cGy at 2, and 222 cGy at 3, and reference values of 6F-sIMRT were measured at 192 cGy at 1, 213 cGy at 2, and 215 cGy at 3. In comparison with these reference values, the first measurement point in 2F-hIMRT was 261.3 cGy with a skin flash 2.0 cm and 2.5 cm, and the highest dose difference was 26.1 %diff. and 5.6 %diff, respectively. The third measurement point was 245.3 cGy and 10.5 %diff at the skin flash 2.5 cm. In the 6F-sIMRT, the highest dose difference was observed at 216.3 cGy and 12.7 %diff. when applying the skin flash 2.0 cm for the first measurement point and the dose difference was the largest at the application point of 2.0 cm, not the skin flash 2.5 cm for each measurement point. In cases of medial 0.5 cm shift points of 2F-hIMRT and 6F-sIMRT without skin flash, the measured value was -75.2 %diff. and -70.1 %diff. at 2F, At -14.8, -12.5, and -21.0 %diff. at the 1st, 2nd and 3rd measurement points, respectively. Generally, both treatment plans showed an increase in total MU, maximum dose and %diff as skin flash thickness increased, except for some results. The difference of skin dose using 0.5 cm thickness of skin flash was lowest lesser than 20 % in every conditions. Conclusion : Minimizing the thickness of skin flash by 0.5 cm is considered most ideal because it makes it possible to keep down MUs and lowering maximum doses. In addition, It was found that MUs, maximum doses and differences of skin doses did not increase infinitely as skin flash thickness increase by. If the error margin caused by PTV or other factors is lesser than 1.0 cm, It is considered that there will be many advantages in with the skin flash technique comparing without it.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.2-188.2
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• 2015

The presence of the conduction interface in epitaxial $LaAlO_3/SrTiO_3$ thin films has opened up challenging applications which can be expanded to next-generation nano-electronics. The metallic conduction path is associated with two adjacent insulating materials. Such device structure is applicable to frequency-dependent impedance spectroscopy. Impedance spectroscopy allows for simultaneous measurement of resistivity and dielectric constants, systematic identification of the underlying electrical origins, and the estimation of the electrical homogeneity in the corresponding electrical origins. Such unique capability is combined with the intentional control on the interface composition composed of $SrTiO_3$ and $CaTiO_3$, which can be denoted by $SrxCa1-_xTiO_3$. The underlying $Sr_xCa1-_xTiO_3$ interface was deposited using pulsed-laser deposition, followed by the epitaxial $LaAlO_3$ thin films. The platinum electrodes were constructed using metal shadow masks, in order to accommodate 2-point electrode configuration. Impedance spectroscopy was performed as the function of the relative ratio of Sr to Ca. The respective impedance spectra were analyzed in terms of the equivalent circuit models. Furthermore, the impedance spectra were monitored as a function of temperature. The ac-based characterization in the 2-dimensional conduction path supplements the dc-based electrical analysis. The artificial manipulation of the interface composition will be discussed towards the electrical application of 2-dimensional materials to the semiconductor devices in replacement for the current Si-based devices.