• 제목/요약/키워드: Metal line pattern

검색결과 78건 처리시간 0.027초

Diagnosing the Condition of Air-conditioning Compressors by Analyzing the Waveform of the Raw AE Signal

  • Kim Jeon-Ha;Lee Gam-Gyu;Kang Ik-Soo;Kang Myung-Chang;Kim Jeong-Suk
    • International Journal of Precision Engineering and Manufacturing
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    • 제7권3호
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    • pp.14-17
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    • 2006
  • To diagnosis abnormal compressor conditions in an air-conditioner, the acoustic emission (AE) signal, which is derived from wear condition, compressed air, and assembly error, was analyzed experimentally. Burst and continuous type AE signals resulted from metal contact and compressed air, and the raw AE signal of compressors was acquired in the production line. After extracting samples using waveforms, the Early Life Test (ELT) was conducted and the waveform was classified as normal or abnormal. Efficient parameters in the waveform pattern were investigated in time and frequency domains and a diagnosis algorithm for air-conditioners using Neural Network estimation is suggested.

AE 원신호 파형분석에 의한 에어컨 컴프레서의 상태 진단 (Condition Diagnosis of Air-conditioner Compressor by Waveform Analysis of AE Raw Signal)

  • 이감규;강익수;강명창;김정석
    • 한국정밀공학회지
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    • 제21권11호
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    • pp.125-129
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    • 2004
  • For the diagnosis of compressor abnormal condition in air-conditioner, AE signal which is derived from wear condition, compressed air and assembly error is analyzed experimentally. The burst and continuous type AE signal occurred by metal contact and compressed air and AE raw signal of compressors were directly acquired in production line. After extracting samples according to waveforms, Early Life Test(ELT) is conducted and classified to normal and abnormal waveform. The efficient parameters of waveform pattern are investigated in time and frequency domain and the diagnosis algorithm of air-conditioner by Neural Network estimation is suggested.

친수성 고분자를 이용한 고정입자패드의 텅스텐 CMP (Tungsten CMP in Fixed Abrasive Pad using Hydrophilic Polymer)

  • 박범영;김호윤;김형재;김구연;정해도
    • 한국정밀공학회지
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    • 제21권7호
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    • pp.22-29
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    • 2004
  • As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

Rexonstruction of Pd Particles Supported on Silica in the Pressure of CO as Studied by Carbon-13 NMR

  • 한옥희;Gary L. Haller;Kurt W. Zilm
    • Bulletin of the Korean Chemical Society
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    • 제19권9호
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    • pp.942-947
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    • 1998
  • The >$^13C$ NMR spectrum of >$^13CO$ adsorbed on Pd particles varies dramatically depending on dispersion. The spectrum of highly dispersed Pd particles supported on silica is a powder pattern ∼800 ppm wide with a first moment of 410 ppm. A low dispersion sample has a motionally narrowed line centered at 750±30 ppm and only ∼85 ppm full width at half height (FWHH). Over several years, high dispersion samples show an increase in the intensity near 750 ppm. These observations are interpreted as an increase of mobile bridging CO on high dispersion Pd surfaces of particles which resulted from smoothing of the metal particle surfaces in the presence of CO.

Fe0.9Zn0.1Cr2S4의 결정학적 및 자기적 성질에 관한 연구 (Studies of Crystallographic and Magnetic Properties in Fe0.9Zn0.1Cr2S4)

  • 배성환;김삼진;김철성
    • 한국자기학회지
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    • 제17권1호
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    • pp.34-37
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    • 2007
  • [ $Fe_{0.9}Zn_{0.1}Cr_2S_4$ ]를 직접합성법으로 제조하여 X선 회절기(XRD), 진동 시료 자화율 측정기(VSM), $M\"{o}ssbauer$ 분광기를 이용하여 시료의 결정학적 및 자기적 특성을 연구하였다. X선 회절도 분석 결과, 결정구조는 입방정형 스피넬 구조이며, 공간 그룹은 Fd3m으로 격자 상수는 $a_0=9.9967\;{\AA}$로 결정되었다. 100 Oe 인가자장하의 자화 곡선(ZFC: Zero field cooling)에서는 77 K 근방에서 첨점 형태의 특이 현상이 관측되었다. VSM과 $M\"{o}ssbauer$ 스펙트럼 분석 결과 $N\'{e}el$ 온도($T_N$)는 153 K로 결정되었다. $M\"{o}ssbauer$ 스펙트럼은 4.2 K에서 커다란 전기 사중극자 상호작용에 의한 비대칭적인 8-line 형태를 나타내었으며 이때의 전기 사중극자 분열치는 2.22mm/s이었다. 77 K에서 전기 사중극자 분열치는 0.20mm/s로 급격히 감소하였고 온도 상승과 함께 $M\"{o}ssbauer$ 스펙트럼 또한 8-line에서 6-line 형태로 변하였다. 상온에서의 이성질체 이동 값은 0.48mm/s로 철의 이온 상태가 전 온도 영역에서 $Fe^{2+}$로 결정되어 진다.

광섬유 브래그 격자와 금속 박막이 단면에 증착된 광섬유로 구성된 광 실시간 지연선로 (Optical True Time-Delay Composed of Fiber Brags Gratings and Metal Film-Coated Fibers)

  • 배덕희;신종덕;김부균
    • 한국통신학회논문지
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    • 제28권7A호
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    • pp.433-439
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    • 2003
  • 본 논문에서는 광섬유 브래그 격자와 Cr/Au 박막이 단면에 증착된 광섬유를 이용하여 위상 배열 안테나를 광학적으로 구동할 수 있는 새로운 구조의 광 실시간 지연 선로를 제안하였다. 이 구조는 각 안테나 소자에 연결된 광 지연선로에서 금속 박막이 광섬유 브래그 격자 한 개를 대체하기 때문에 광섬유 브래그 격자들로만 구성된 종래의 실시간 지연선로 구조들에 비해 적은 수의 광섬유 브래그 격자를 사용하며, 금속 박막의 반사율이 광범위한 파장대역에서 일정하므로 금속 박막으로부터 반사되는 파장을 선택하기 용이한 장점을 갖고 있다. 0$^{\circ}$$\pm$30$^{\circ}$로 빔 주사가 가능한 10 GHz 선형 위상 배열 안테나를 위한 실시간 지연선로를 구현하였으며, 모든 빔 주사각에서 시간 지연 측정 결과는 계산치와 일치하였다. 또한, 제안된 실시간 지연선로로 구동되는 8개의 안테나 소자로 구성된 10 GHz 선형 배열 안테나를 설계하였으며, 이 안테나의 원거리 방사패턴을 시뮬레이션을 통해 구하였다.

Plasma Etching Process based on Real-time Monitoring of Radical Density and Substrate Temperature

  • Takeda, K.;Fukunaga, Y.;Tsutsumi, T.;Ishikawa, K.;Kondo, H.;Sekine, M.;Hori, M.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.93-93
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    • 2016
  • Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

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미세금형 가공을 위한 전기화학식각공정의 유한요소 해석 및 실험 결과 비교

  • 류헌열;임현승;조시형;황병준;이성호;박진구
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2012년도 춘계학술발표대회
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    • pp.81.2-81.2
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    • 2012
  • To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.

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Molecular genetic analysis of phytochelatin synthase genes in Arabidopsis

  • Ha, Suk-Bong
    • 한국식물학회:학술대회논문집
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    • 한국식물학회 2002년도 춘계학술발표대회:발표눈문요지록
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    • pp.62-72
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    • 2002
  • This study has investigated the biosynthesis and function of the heavy metal binding peptides, the phytochelatins, in plants. PCs are synthesised enzymatically from glutathione by the enzyme PC synthase in the presence of heavy metal ions. Using Arabidopsis thaliana as a model organism cadmium-sensitive, phytochelatin-deficient mutants have been isolated and characterised in previous studies. The cadl mutants have wildtype levels of glutathione, are PC deficient and lack PC synthase activity. Thus, the CADl gene has been proposed to encode PC synthase. The CADl gene was isolated by a positional cloning strategy The gene was mapped and a candidate identified. Each of four cadl mutants had a single base pair change in the candidate gene and the cadmium-sensitive, cadl phenotype was complemented by the candidate gene. This demonstrated the CADl gene had been cloned. A homologous gene in the fission yeast, Schizosaccharomyces pombe was identified through database searches. A targeted-deletion mutation of this gene was constructed and the mutant, like cadl mutants of Arabidopsis, was cadmium-sensitive and PC-deficient. A comparison of the redicted amino acid sequences reveals a highly conserved N-terminal region Presumed to be the catalytic domain and a variable C-terminal region containing multiple Cys residues proposed to be involved in activation of the enzyme by metal ions. Similar genes were also identified in animal species. The Arabidopsis CADl/AtPCSl and S. pombe SpbPCS genes were expressed in E. coli and were shown to be sufficient for glutathione-dependent, heavy metal activate PC synthesis in vitro, thus demonstrating these genes encode PC synthase enzymes. Using RT-PCR, AtPCSl expression appeared to be independent of Cd exposure. However, at higher levels of Cd exposure a AtPCSl-CUS reporter gene construct appeared to be more highly expressed. Using the reporter gene construct, AtPCSl was expressed most tissues. Expression appeared to be greater in younger tissues and same higher levels of expression was observed in some regions, including carpels and the base of siliques. AtPCS2 was a functional gene encoding an active PC synthase. However, its Pattern of expression and the phenotype of a mutant (or antisense line) have not been determined. Assuming the gene is functional then it has clearly been maintained through evolution and must provide some selective advantage. This implies that, at least in some cells or tissue, it is likely to be the dominant PC synthase expressed. This remains to be determined

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코발트 니켈 복합 실리사이드 공정에서 하부 형상에 따른 잔류 금속의 형상 변화 (Residual Metal Evolution with Pattern Density in Cobalt Nickel Composite Silicide Process)

  • 송오성;김상엽
    • 한국산학기술학회논문지
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    • 제6권3호
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    • pp.273-277
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    • 2005
  • 새로이 제안된 15nm-Ni/15nm-Co의 적층구조로부터 제조된 NiCo 복합실리사이드를 실제 디바이스에 채용하기 위해, $SiO_2$ 스페이서를 가진 폴리실리콘 게이트 선폭이 $0.25\~l.5um$까지 변화하는 테스트그룹을 이용하여 30초-RTA를 이용한 실리사이드화 온도를 $700^{\circ}C\~1100^{\circ}C$까지 변화시키면서 이때 cleaning전후의 잔류금속의 생성모습을 확인하였다. RTA온도가 올라갈수록 $SiO_2$로 구성된 필드와 스페이서 상부와, 실리사이드가 형성된 게이트 상부에 $0.25{\mu}m$정도의 단축직경을 가진 타원형 잔류금속이 미로형 또는 게이트 방향으로 생성되는 특징이 있었고 동시에 응집이 많아지는 현상이 있었다. 응집이 많을수록 하부 절연층과의 반응도가 증가하여 절연특성이 저하될 수 있었고 과도한 습식제거 공정을 오래하여야 하므로 실험범위 내에서 가급적 저온 실리사이드화 열처리가 바람직하였다.

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