• Title/Summary/Keyword: Metal bond

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Effect of applying a DC voltage on the interfacial reactions at the zirconia to copper interface (접합계면반응에 미치는 직류전원부하의 영향)

  • Kim, Sung-Jin;Kim, In-Su;Oh, Myung-Hoon;Choi, Hwan
    • Proceedings of the KWS Conference
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    • 1996.05a
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    • pp.6-9
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    • 1996
  • The Joining of copper rod and zirconia tube was carried out in Ar gas atmosphere. There are two type of the joining. The one is the reaction bond consisting of Cu and zirconia was dominated by surface reaction wi th a undetctable very thin layer. It was found that copper elements were diffused to zirconia side, but that most of Z $r^{4+}$ ions were not diffused to copper side. This result means application of a DC voltage to migrate oxygen to the copper/zirconia interface can oxidize metal at the copper /zirconia interface, and the bonding reaction between zirconia and copper oxide may occur. The other is the reaction bonding was dominated by interdiffusion with a very thick interface layer. This result means application of a DC voltage can reduce zirconia at the interface. The bonding reaction is to be an alloying between Zr and Cr.

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Effect of Polishing Grinding Conditions on Alkali-free Glass (무 알칼리 유리의 연마 조건에 따른 영향)

  • Park, Younghee;Hong, Minsung
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.25 no.6
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    • pp.440-444
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    • 2016
  • Owing to the introduction of various IT devices with emphasis on portability and design, the TFT (thin film transistor liquid crystal display) panel applied to IT devices has the same shape as the product, and the portability requirement of IT devices has resulted in a need for panels with higher rigidity. In this study, the effect of grinding conditions such as the feed rate and edge speed of edge grinding on the surface roughness and chipping of the machined surface is investigated using a metal bond wheel. During edge grinding of alkari-free glass, weak mechanical property of glass results in big chipping owing to generation of tensile stress at the end of grining operation. The results of this study show that the grinding characteristics of alkali-free glass are obtained and meet industry requirements.

Review of magnetic pulse welding

  • Kang, Bong-Yong
    • Journal of Welding and Joining
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    • v.33 no.1
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    • pp.7-13
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    • 2015
  • Magnetic pulse welding(MPW) is a solid state welding process that is accomplished by a magnetic pulse causing a high-velocity impact on two materials, resulting in a true metallurgical bond. One of the great advantages of MPW is that it is suitable for joining dissimilar metals. No heat affected zones are created because of the negligible heating and the clean surfaces formation that is a consequence of the jet and the metal is not degraded. Also, compared to other general welding processes, this process leads to only a low formation of brittle intermetallic compounds However, although this process has many advantages its application to industrial fields has so far been very low. Therefore, in this study we are presenting the principles, apparatus and application of MPW for application the industrial fields.

Preparation of Novel Iron Phthalocyanine Containing Reactive Groups and its Deodorizing Property on Cellulose

  • Kim, Eun-Mi;Choi, Jae-Hong
    • Textile Coloration and Finishing
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    • v.25 no.4
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    • pp.247-253
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    • 2013
  • The enzyme-like catalytic functions of metal complex phthalocyanine derivatives those containing carboxylic acid groups could be applied as odor-removing systems and antibacterial systems. Pyromellitic dianhydride and 4-nitrophthalimide were used as starting material for synthesizing dinitro-tetracarboxylic acid iron phthalocyanine(compound 1). Then diamino-tetracarboxylic phthalocyanine(compound 2) was obtained by reduction of compound 1. For the formation of covalent bond with cellulose fiber, cyanuric chloride was introduced to the amino group of compound 2 by condensation reaction compound 3. The exhaustion method was employed for adsorbing compound 3 on cotton fiber. K/S values of each fabrics were measured by a CCM system and deodorizing rates were tested by a detector tube method for ammonia gas. K/S values of treated cotton fiber with compound 3 were arranged from 2.1 to 4.2 at $90^{\circ}C$ of exhaustion temperature. Deodorizing rates provided result of 81%, 84%, 88%, 91%, by passing time of 30 min, 60 min, 90 min, 120 min, respectively.

Characteristic of Laser Cladding Process with High Viscosity Bronze Powder and Al-alloy (고점성 청동분말을 이용한 알루미늄 합금의 레이저 클래딩 특성)

  • 오동수;전병철;김재도
    • Proceedings of the Korean Society of Laser Processing Conference
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    • 2001.05a
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    • pp.31-34
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    • 2001
  • Laser cladding Processing allows rapid transfer of heat to the material being minimum conduction into base metal. The effects of CO$_2$ laser cladding with high powder were investigated. High viscosity bronze powder consists of bronze powder used at a high temperature. The material has a high viscosity So that it can be substrate. Therefore. Laser cladding can be processed on a curved or slope surface. CO$_2$ laser cladding was designed It consists of the high viscosity bronze powder the shielding gas system and the preheating system The high viscosity powder properly at 0.3g/s and 0.50g/s. Because of the metallic bond between bronze per the hardness of dilution layer was suddenly increased. Experimental as results viscosity mixed powder can be a useful cladding material.

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Controlled Plasma Treatment for Edge Contacts of Graphene (그래핀의 엣지 접합 (Edge Contact)을 위한 플라즈마 처리 연구)

  • Yue, Dewu;Ra, Chang-Ho;Liu, Xiaochi;Daeyeong, Daeyeong;Yu, Won-Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.293-293
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    • 2014
  • The applicability of graphene has been demonstrated in the electronic fields. But, high performance of graphene is limited by the contact resistance (Rc) at the metal-graphene interface. Recently, Rc was found to be improved by forming edge-contacted graphene via theoretical simulation. Based on the differences between the surface and edge contacts at the M-G interface, we demonstrate "edge-contacted" graphene through the use of a controlled plasma processing technique that generates the edge structure of the bond and significantly reduces the contact resistance. The contact resistance attained by using pre-plasma processing was of $270{\Omega}{\cdot}{\mu}m$. Mechanisms of pre-plasma process leading to low Rc was revealed by SEM and Raman spectroscopy. In the end, controlled pre-plasma processing enabled to fabricate CVD-graphene field effect transistors with an enhanced adhesion and improved carrier mobility.

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THE EFFECT OF THE VENT ON THE CASTABILITY OF A NONPRECIOUS ALLOY USED FOR PORCELAIN-FUSED-TO-METAL CROWN (VENT가 도재전장 주조관용 비귀금속 합금의 주조성에 미치는 영향에 관한 연구)

  • Lee, Jin-Geul;Chang, Wan-Shik
    • The Journal of Korean Academy of Prosthodontics
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    • v.23 no.1
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    • pp.145-154
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    • 1985
  • To study the effect of the vent and dense surface of the phophate-bonded investment on the castability of a non-precious alloy used in PFM restoration, one-ended polypropylene straw patterns of 0.15mm thick, 5mm radius. 10mm-high were cast with Vera Bond. The following results were obtained. 1. Thin patterns could be cast completely with a non-precious alloy. 2. No difference in the castability was found among the patterns with vent, chill vent and with out vent. 3. Dense surface of the phosphate-bonded investment had no effect on the cast ability of a nonprecious alloy.

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1차원 무기 반도체 신 물질 재료의 연구 개발 동향

  • Ryu, Hak-Gi
    • Ceramist
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    • v.21 no.2
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    • pp.29-37
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    • 2018
  • In order to overcome the problems of existing low-dimensional materials (carbon nanotubes, graphene, transition metal dichalcogenides, etc) researches on new 1D materials have been studied. In the case of $LiMo_3Se_3$ and $Mo_6S_{9-x}I_x$, continuous researches have been carried out for 3D bulk synthesis and atomic scale dispersion. Recently, quantum confinement effect of $LiMo_3Se_3$ and bio-stability of $Mo_6S_{9-x}I_x$ have been proven and various applications have started to be studied. In addition, device application results using new 1D materials such as $Sb_2Se_3$ (optoelectronic devices using the property of effectively reducing exciton decay due to no dangling bond) and $VS_4$ (electrochemical energy storage using the space between 1-D nanostructures) have been reported very importantly. Therefore, it can be claimed that it has reached a very important time to find and synthesize new 1D materials and to report various characteristics not existing.

A Study on the Solid State Diffusion Bonding of Ti-6Al-4V Alloy (Ti-6Al-4V합금의 고상 확산접합에 관한 연구)

  • 강호정;강춘식
    • Journal of Welding and Joining
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    • v.15 no.6
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    • pp.32-40
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    • 1997
  • Solid state diffusion bonding is the joining process performed by creep and diffusion, which is accelerated by heating below melting temperature and proper pressing, in vacuum or shielding gas atmosphere. By this process we can obtain sufficient joint which can't be expected from the fusion welding. For Ti-6Al-4V alloy, the optimum solid state diffusion bonding condition and mechanical properties of the joint were found, and micro void morphology at bond interface was observed by SEM. The results of tensile test showed sufficient joint, whose mechanical properties are similar to that of base metal. 850$^{\circ}$C, 3MPa is considered as the optimum bonding condition. Void morphology at interface is long and flat at the initial stage. As the percentage of bonded area increases, however, small and round voids are found. Variation of void shape can be explained as follows. As for the void shrinkage mechanism, at the initial stage, power law creep is the dominant, but diffusion mechanism is dominant when the percentage of bonded area is increased.

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저온 증착된 게이트 절연막의 안정성 향상을 위한 플라즈마 처리

  • Choe, U-Jin;Jang, Gyeong-Su;Baek, Gyeong-Hyeon;An, Si-Hyeon;Park, Cheol-Min;Jo, Jae-Hyeon;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.342-342
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    • 2011
  • 산화막은 반도체 공정 중 가장 핵심적이며 기본적인 물질이다. 반도체 소자에서 내부의 캐리어들의 이동을 막고 전기를 절연시켜주는 절연체로서 역할을 하게 된다. 실제로 제작된 산화막에서는 dangling bond 혹은 내부에 축적되는 charge들의 의해 leakage가 생기게 되고 그에 따라 산화막의 특성은 저하되게 된다. 내부에서 특성을 저하시키는 defect을 감소시키기 위해 Plasma Treatment에 따른 특성변화를 관찰하였다. 본 연구에서는 최적화 시킨 Flexible TFT제작을 위해 저온에서 Silicon Oxide로 형성한 Gate Insulator에 각각 N2O, H2, NH3가스를 주입 후 Plasma처리를 하였다. 특성화 시킨 Gate Insulator를 이용하여 MIS(Metal-Insulator-Semiconductor)구조를 제작 후 C-V curve특성변화, Dit의 감소, Stress bias에 따른 stability를 확인 하였다.

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